P1008 [MIMIX]
Wide Band Medium Power Amplifier, 11000MHz Min, 16000MHz Max, DIE-8;
| 型号： | P1008 |
| 厂家： | 
MIMIX BROADBAND |
| 描述： | Wide Band Medium Power Amplifier, 11000MHz Min, 16000MHz Max, DIE-8 射频 微波 |
| 文件： | 总6页 (文件大小：160K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
11.0-16.0 GHz GaAs MMIC
Power Amplifier
May 2006 - Rev 10-May-06
P1008
Features
Chip Device Layout
Excellent Linear Output Amplifier Stage
31.0 dB Small Signal Gain
+30.0 dBm P1dB Compression Point
+38.5 dBm Third Order Intercept (OIP3)
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Mimix Broadband’s three stage 11.0-16.0 GHz GaAs
MMIC power amplifier is optimized for linear operation
with a third order intercept point of +38.5 dBm.This
MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT
device model technology, and is based upon electron
beam lithography to ensure high repeatability and
uniformity.The chip has surface passivation to protect
and provide a rugged part with backside via holes and
gold metallization to allow either a conductive epoxy
or eutectic solder die attach process.This device is well
suited for Millimeter-wave Point-to-Point Radio, LMDS,
SATCOM and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1,2,3)
Gate Bias Voltage
+5.5 VDC
80,175,750 mA
+0.3 VDC
Input Power (Pin)
+12 dBm
Storage Temperature (Tstg) -65 to +165 OC
3
Operating Temperature (Ta) -55 to MTTF TAble
3
Channel Temperature (Tch) MTTF Table
(3) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (AmbientTemperatureT = 25 oC)
Parameter
Units
GHz
dB
Min.
11.0
-
Typ.
-
7.0
Max.
16.0
-
Frequency Range (f)
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept Point (OIP3)
Drain Bias Voltage (Vd1,2,3)
Gate Bias Voltage (Vg1,2,3)
dB
dB
dB
dB
dBm
dBm
VDC
VDC
mA
-
-
-
-
-
-
17.0
31.0
+/-0.5
-
+30.0
+38.5
+5.0
-0.3
925
-
-
-
-
-
-
-
2
1,2
-
-1.0
-
0.0
-
Supply Current (Id) (Vd=5.0V,Vg=-0.3V Typical)
(1) Measured at +18 dBm per tone output carrier level across the full frequency band.
(2) Measured using constant current.
Page 1 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
11.0-16.0 GHz GaAs MMIC
Power Amplifier
May 2006 - Rev 10-May-06
P1008
Power Amplifier Measurements
Measured performance characteristics (Typical at 25°C)
Vd1= 5 V, Id= 75 mA; Vd2= 5V, Vd2= 170 mA ; Vd3= 5V, Vd3= 680 mA
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
34
32
30
28
26
24
22
20
9
10
11
12
13
14
15
16
17
9
10
11
12
13
14
15
16
17
Frequency (GHz)
Frequency (GHz)
*Fixtured data
P1dB
Psat
IP3@Pout=18dBm/tone
*Fixtured data
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
0
-5
-10
-15
-20
-25
-30
-10
10
10
11
12
13
14
15
16
17
11
12
13
14
15
16
17
Freq. (GHz)
Freq. (GHz)
Page 2 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
11.0-16.0 GHz GaAs MMIC
Power Amplifier
May 2006 - Rev 10-May-06
P1008
S-Parameters
Measured performance characteristics (Typical at 25°C)
Vd1= 5 V, Id= 75 mA; Vd2= 5V, Vd2= 170 mA ; Vd3= 5V, Vd3= 680 mA
Freq GHz S11 Mag S11 A ng S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang
10.00
10.50
11.00
11.50
12.00
12.50
13.00
13.50
14.00
14.50
15.00
15.50
16.00
16.50
17.00
0.33
0.30
0.28
0.26
0.27
0.24
0.21
0.16
0.13
0.07
0.09
0.10
0.05
0.05
0.04
-36.55
-41.99
-46.19
-49.64
-54.12
-69.70
-75.52
-84.22
-85.63
-74.92
-51.15
-68.47
-73.52
-38.33
-23.80
27.88
27.70
29.22
30.39
32.81
35.45
35.19
33.92
32.01
28.83
27.79
27.76
27.22
26.09
24.52
155.09
125.86
96.59
66.86
36.78
0.00
0.00
0.00
0.00
0.00
0.00
0.00
0.00
0.00
0.00
0.00
0.00
0.00
0.00
0.00
161.32
147.19
143.98
133.38
107.86
120.42
163.06
136.26
128.28
122.57
77.25
0.75
0.70
0.68
0.62
0.58
0.54
0.50
0.44
0.43
0.39
0.46
0.56
0.65
0.67
0.64
114.74
104.31
88.88
69.19
47.84
0.80
19.42
-34.79
-70.81
-104.39
-137.92
-167.76
158.91
122.32
84.39
-12.49
-43.22
-63.52
-76.19
-79.90
-91.08
-106.96
-122.59
-139.15
42.07
10.46
54.34
32.49
43.96
Page 3 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
11.0-16.0 GHz GaAs MMIC
Power Amplifier
May 2006 - Rev 10-May-06
P1008
Mechanical Drawing
0.474
0.874
(0.019) (0.034)
1.280
(0.051)
2
3
0.737
0.737
1
4
(0.029)
(0.029)
8
7
6
5
0.0
0.0
3.480
0.534
0.934
1.334
1.934
(0.137)
(0.021) (0.037)
(0.053)
(0.076)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All Bond Pads are 0.100 x 0.100 (0.004 x 0.004).
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 2.762 mg.
Bond Pad #1 (RF In)
Bond Pad #2 (Vg1)
Bond Pad #3 (Vd1)
Bond Pad #4 (RF Out)
Bond Pad #5 (Vd3)
Bond Pad #6 (Vg3)
Bond Pad #7 (Vd2)
Bond Pad #8 (Vg2)
Bias Arrangement
10
Vg1
Vd1
Bypass Capacitors - See App Note [2]
2
3
RF In
1
RF Out
4
8
7
6
5
10
10
Vg2
Vd3
Vd2
Vg3
Page 4 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
11.0-16.0 GHz GaAs MMIC
Power Amplifier
May 2006 - Rev 10-May-06
P1008
App Note [1] Biasing - It is recommended to separately bias each stage at Vd(1,2,3)=5.0V, Id1=75mA, Id2=170mA, and Id3=680mA.
It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most
reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a
single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the
current.The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage.The typical gate voltage needed
to do this is -0.3V.Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the
applied voltage to ensure negative gate bias is available before applying the positive drain supply.
App Note [2] Bias Arrangement -
For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC
bypass capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or
combination (if gate or drains are tied together) of DC bias pads.
For Individual Stage Bias (Recommended for Saturated Applications) -- Each DC pad (Vd1,2,3 and Vg1,2,3) needs to have DC bypass
capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
MTTFTable (TBD)
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Backplate
Channel
Rth
MTTF Hours
FITs
Temperature
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
deg Celsius
deg Celsius
deg Celsius
C/W
C/W
C/W
E+
E+
E+
E+
E+
E+
Bias Conditions: Vd1=Vd2=Vd3=5.0V, Id1=75 mA, Id2=170 mA, Id3=680 mA
Page 5 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
11.0-16.0 GHz GaAs MMIC
Power Amplifier
May 2006 - Rev 10-May-06
P1008
Handling and Assembly Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the
human body and the environment. For safety, observe the following procedures:
Do not ingest.
Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical
processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this product.This product must be
discarded in accordance with methods specified by applicable hazardous waste procedures.
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support
devices or systems without the express written approval of the President and General Counsel of Mimix
Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for
surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in a
significant injury to the user. (2) A critical component is any component of a life support device or system whose
failure to perform can be reasonably expected to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied
in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-
static workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care,
sharp tweezers.
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the
backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as
possible.The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are
Ablestick 84-1LMI or 84-1LMIT cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy
sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total
2
die periphery. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.001
thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated
collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere
is recommended.The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold
+
Germanium should be avoided).The work station temperature should be 310 C 10 C. Exposure to these
-
extreme temperatures should be kept to minimum.The collet should be heated, and the die pre-heated to avoid
excessive thermal shock. Avoidance of air bridges and force impact are critical during placement.
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to
the die's gold bond pads.The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x
0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm
(0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be
avoided.Thermo-compression bonding is recommended though thermosonic bonding may be used providing
the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters.
Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short
as possible.
Page 6 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
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