XP1014-BD-000W
更新时间：2024-09-18 19:13:56
品牌：MIMIX
描述：Wide Band Medium Power Amplifier, 8500MHz Min, 11000MHz Max, ROHS COMPLIANT, PLASTIC, DIE-6
概述
规格参数
数据手册XP1014-BD-000W 概述
Wide Band Medium Power Amplifier, 8500MHz Min, 11000MHz Max, ROHS COMPLIANT, PLASTIC, DIE-6 射频/微波放大器
XP1014-BD-000W 规格参数
| 是否无铅： | 不含铅 | 是否Rohs认证： | 符合 |
| 生命周期： | Obsolete | Reach Compliance Code： | unknown |
| 风险等级： | 5.69 | 构造： | COMPONENT |
| 增益： | 18 dB | JESD-609代码： | e3 |
| 最大工作频率： | 11000 MHz | 最小工作频率： | 8500 MHz |
| 射频/微波设备类型： | WIDE BAND MEDIUM POWER | 端子面层： | Matte Tin (Sn) |
| Base Number Matches： | 1 |
XP1014-BD-000W 数据手册
通过下载XP1014-BD-000W数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载Velocium Products
18 - 20 GHz H478
8.5-11.0 GHz GaAs MMIC
Power Amplifier
November 2006 - Rev 01-Nov-06
P1014
Features
Chip Device Layout
XP1006 Driver Amplifier
18.0 dB Small Signal Gain
XP1014
Mimix Broadband
I0005129
TNO © 2005
+31.0 dBm Saturated Output Power
35% Power Added Efficiency
On-chip Gate Bias Circuit
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Mimix Broadband’s two stage 8.5-11.0 GHz GaAs
MMIC power amplifier has a small signal gain of 18.0
dB with a +31 dBm saturated output power and also
includes on-chip gate bias circuitry.This MMIC uses
Mimix Broadband’s 0.5 m GaAs PHEMT device
model technology, and is based upon electron beam
lithography to ensure high repeatability and
uniformity.The chip has surface passivation to protect
and provide a rugged part with backside via holes
and gold metallization to allow either a conductive
epoxy or eutectic solder die attach process.This
device is well suited for radar applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
+9.0 VDC
510 mA
+0.0 VDC
TBD
Storage Temperature (Tstg) -65 to +165 OC
Operating Temperature (Ta) -55 to MTTF Table
1
1
Channel Temperature (Tch) MTTF Table
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (AmbientTemperatureT = 25 oC)
Parameter
Frequency Range (f)
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Units
GHz
dB
dB
dB
Min.
8.5
-
-
-
-
-
Typ.
-
Max.
11.0
-
-
-
-
-
15.0
12.0
18.0
+/-1.0
-
dB
dB
Reverse Isolation (S12)
Saturated Output Power (Psat)
Power Added Efficiency (PAE)
Drain Bias Voltage (Vd1,2)
Gate Bias Voltage (Vg1 or Vg2)
Supply Current (Id) (Vd = 8.0V,Vg1 = -5.0V)
dBm
%
VDC
VDC
mA
-
-
+31.0
35
+8.0
-5.0
450
-
-
-
-6.0
-
+9.0
-4.0
510
Page 1 of 5
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
Velocium Products
18 - 20 GHz H478
8.5-11.0 GHz GaAs MMIC
Power Amplifier
November 2006 - Rev 01-Nov-06
P1014
Power Amplifier Measurements
Small signal Gain (Vd=8V, Vg1=-5V, Ps=-20dBm)
Input return loss (Vd=8V, Vg1=-5V, Ps=17dBm)
0
20
-5
19
18
-10
-15
-20
17
16
15
-25
-30
-35
14
8
8.5
9
9.5
10
10.5
11
11.5
12
8
8.5
9
9.5
10
10.5
11
11.5
12
f [GHz]
f [GHz]
Output power (Vd=8V, Vg1=-5V, Ps=17dBm)
Power Added Efficiency (Vd=8V, Vg1=-5V, Ps=17dBm)
33
32
31
30
29
50
45
40
35
30
25
20
8
8.5
9
9.5
10
10.5
11
11.5
12
8
8.5
9
9.5
10
10.5
11
11.5
12
f [GHz]
f [GHz]
Page 2 of 5
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
Velocium Products
18 - 20 GHz H478
8.5-11.0 GHz GaAs MMIC
Power Amplifier
November 2006 - Rev 01-Nov-06
P1014
1.962
2.412
Mechanical Drawing
(0.077)
(0.095)
1.400
(0.055)
XP1014
Mimix Broadband
I0005129
2
3
TNO © 2005
0.449
0.449
(0.018)
4
1
(0.018)
5
6
0.0
0.0
3.200
1.962
1.662
(0.126)
(0.077)
(0.065)
(Note: Engineering designator is I0005129)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All DC Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.120 x 0.200 (0.005 x 0.008)
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 2.778 mg.
Bond Pad #1 (RF In)
Bond Pad #2 (Vd1)
Bond Pad #3 (Vd2)
Bond Pad #4 (RF Out)
Bond Pad #5 (Vg2)
Bond Pad #6 (Vg1)
Bias Arrangement
Vd1
Vd2
Bypass Capacitors - See App Note [2]
XP1014
Mimix Broadband
I0004966
2
3
TNO © 2005
4
1
RF In
RF Out
5
6
Vg1
Page 3 of 5
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
8.5-11.0 GHz GaAs MMIC
Power Amplifier
November 2006 - Rev 01-Nov-06
P1014
App Note [1] Biasing - This device has been designed with two options for biasing.Vg1 applies gate bias through an active, on-chip
bias circuit and Vg2 applies gate bias through a resistive divider. Using the first option and applying a nominal bias of Vg1=-5.0V and
Vd (1,2)=8.0V will typically yield a total drain current Id(TOTAL)=450mA. Alternatively, the drain current can be regulated by setting
Vg2=-5.0V and Vd(1,2)=8.0V which will typically yield a total drain current Id(TOTAL)=450mA. It is recommended to use active biasing
to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Also, make sure to
sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply.
App Note [2] Bias Arrangement -
Each DC pad (Vd1, 2 and Vg or Vgg) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional
DC bypass capacitance (~0.01 uF) is also recommended.
MTTF
XP1014 MTTF vs. Backplate Temperature and Pulsed Duty Cycle
1.0E+05
100% DC
1.0E+04
1.0E+03
1.0E+02
1.0E+01
1.0E+00
1.0E-01
50% DC
30% DC
10% DC
20
30
40
50
60
70
80
90
100
110
120
Backplate Temp (C)
MTTF is calculated from accelerated life-time data of single devices and assumes isothermal back-plate.
Bias Conditions: Vd1=Vd2=8.0V, Id(TOTAL)=450 mA
Page 4 of 5
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
Velocium Products
18 - 20 GHz H478
8.5-11.0 GHz GaAs MMIC
Power Amplifier
November 2006 - Rev 01-Nov-06
P1014
Handling and Assembly Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body
and the environment. For safety, observe the following procedures:
• Do not ingest.
• Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these
by-products are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this product.This product must be discarded in
accordance with methods specified by applicable hazardous waste procedures.
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or
systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein:
(1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided
in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any
component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the
life support device or system, or to affect its safety or effectiveness.
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic
containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. Devices
need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers.
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to
enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible.The mounting surface
should be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM6030HK or
DM6030HK-Pt cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any
on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. For additional information
please see the Mimix "Epoxy Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless
gold-tin (AuSn) preform, approximately 0.0012 thick, placed between the die and the attachment surface should be used. A die
bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a
nitrogen atmosphere is recommended.The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 ºC
(Note: Gold Germanium should be avoided).The work station temperature should be 310 ºC +/- 10 ºC. Exposure to these
extreme temperatures should be kept to minimum.The collet should be heated, and the die pre-heated to avoid excessive
thermal shock. Avoidance of air bridges and force impact are critical during placement.
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold
bond pads.The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold
ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds
are acceptable for DC Bias connections. Aluminum wire should be avoided.Thermo-compression bonding is recommended
though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and
ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All
bonds should be as short as possible.
Ordering Information
Part Number for Ordering
XP1014-BD-000W
XP1014-BD-000V
Description
Where“W”is RoHS compliant die packed in waffle trays
Where“V”is RoHS compliant die packed in vacuum release gel paks
XP1019 die evaluation module
XP1014-BD-EV1
Page 5 of 5
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
XP1014-BD-000W 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| XP1014-BD-EV1 | MIMIX | 8.5-11.0 GHz GaAs MMIC Power Amplifier | 获取价格 |
|
| XP1015 | MIMIX | 43.5-46.5 GHz GaAs MMIC Power Amplifier | 获取价格 |
|
| XP1015-BD | MIMIX | 43.5-46.5 GHz GaAs MMIC Power Amplifier | 获取价格 |
|
| XP1015-BD-000V | MIMIX | 43.5-46.5 GHz GaAs MMIC Power Amplifier | 获取价格 |
|
| XP1015-BD-EV1 | MIMIX | 43.5-46.5 GHz GaAs MMIC Power Amplifier | 获取价格 |
|
| XP1015-BD_10 | MIMIX | 43.5-46.5 GHz GaAs MMIC | 获取价格 |
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| XP1016 | MIMIX | 43.5-46.5 GHz GaAs MMIC Power Amplifier | 获取价格 |
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| XP1016-BD | MIMIX | 43.5-46.5 GHz GaAs MMIC Power Amplifier | 获取价格 |
|
| XP1016-BD-000V | MIMIX | 43.5-46.5 GHz GaAs MMIC Power Amplifier | 获取价格 |
|
| XP1016-BD-EV1 | MIMIX | 43.5-46.5 GHz GaAs MMIC Power Amplifier | 获取价格 |
|
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