XP1015-BD_10 [MIMIX]

43.5-46.5 GHz GaAs MMIC; 43.5-46.5 GHz的砷化镓MMIC


型号：	XP1015-BD_10
厂家：	MIMIX BROADBAND
描述：	43.5-46.5 GHz GaAs MMIC 43.5-46.5 GHz的砷化镓MMIC
文件：	总8页 (文件大小：970K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

43.5-46.5 GHz GaAs MMIC

Power Amplifier

January 2010 - Rev 22-Jan-10

P1015-BD

Features

Chip Device Layout

Excellent Saturated Output Stage

Balanced Design Provides Good Input/Output Match

13.0 dB Small Signal Gain

+31.0 dBm P1dB Compression Point

100% On-Wafer RF, DC and Output Power Testing

100% Visual Inspection to MIL-STD-883

Method 2010

General Description

XP1015-BD

Mimix Broadband's three stage balanced 43.5 - 46.5

GHz GaAs MMIC power amplifier has a small signal

gain of 13.0 dB with a +31.0 dBm P1dB output

compression point.The device also includes Lange

couplers to achieve good input and output return loss.

This MMIC uses Mimix Broadband’s GaAs PHEMT

device model technology, and is based upon electron

beam lithography to ensure high repeatability and

uniformity.The chip has surface passivation to protect

and provide a rugged part with backside via holes and

gold metallization to allow either a conductive epoxy

or eutectic solder die attach process.This device is well

suited for Millimeter-wave Point-to-Point Radio, LMDS,

SATCOM and VSAT applications.

Absolute Maximum Ratings

Supply Voltage (Vd)

Supply Current (Id1,2,3)

Gate Bias Voltage (Vg)

Input Power (Pin)

+6.0 VDC²

945,945,1915 mA

+0.3 VDC

+26 dBm

Storage Temperature (Tstg) -65 to +165 ºC

Operating Temperature (Ta) -55 to +85 ºC

Channel Temperature (Tch)¹+175 ºC

(1) Channel temperature affects a device's MTTF. It is

recommended to keep channel temperature as low as

possible for maximum life.

(2) Under pulsed bias conditions, under CW Psat conditions

further reduction in max supply voltage (~0.5V) is

recommended

Electrical Characteristics (AmbientTemperatureT = 25 ^oC)

Parameter

Frequency Range (f)

Input Return Loss (S11)

Output Return Loss (S22)

Small Signal Gain (S21)

Units

GHz

Min.

43.5

Typ.

Max.

46.5

+5.5

0.0

860

1740

20.0

13.0

+/-1.0

45.0

+31.0

+5.0

-0.5

Gain Flatness ( S21)

Reverse Isolation (S12)

Output Power for 1dB Compression (P1dB)

Drain Bias Voltage (Vd1,2,3)

Gate Bias Voltage (Vg1,2,3)

Supply Current (Id1) (Vd=5.0V,Vg=-0.5V Typical)

Supply Current (Id2) (Vd=5.0V,Vg=-0.5V Typical)

Supply Current (Id3) (Vd=5.0V,Vg=-0.5V Typical)

dBm

VDC

-1.0

720

1440

(2) Measured using constant current.

Page 1 of 8

Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

43.5-46.5 GHz GaAs MMIC

Power Amplifier

January 2010 - Rev 22-Jan-10

P1015-BD

Power Amplifier Measurements (On-Wafer¹)

XP1015-BD Vd=5.0 V, Id1,2=720 mA, Id3=1440 mA

-10

-20

-30

-40

-50

-60

-70

-80

42.0

43.0

44.0

45.0

46.0

47.0

48.0

40.0

41.0

42.0

43.0

44.0

45.0

46.0

47.0

48.0

49.0

50.0

Frequency (GHz)

XP1015-BD Vd=5.0 V, Id1,2=720 mA, Id3=1440 mA

-5

-10

-15

-20

-25

-30

-35

-40

-10

-15

-20

-25

-30

-35

-40

42.0

43.0

44.0

45.0

46.0

47.0

40.0

41.0

42.0

43.0

44.0

45.0

46.0

47.0

48.0

49.0

Frequency (GHz)

XP1015-BD Vd=5.0 V, Id1,2=720 mA, Id3=1440 mA

-5

-10

-15

-20

-25

-30

-10

-15

-20

-25

-30

42.0

43.0

44.0

45.0

46.0

47.0

40.0

41.0

42.0

43.0

44.0

45.0

46.0

47.0

48.0

49.0

Frequency (GHz)

Note [1] Measurements – On-Wafer S-Parameters have been taken using reduced bias conditions as shown. Measurements are referenced 150 um

in from RF In/Out pad edge. For optimum performance Mimix T-pad transition and tuned output matching network is recommended. For additional

information see the Mimix“T-Pad Transition”application note. Contact technical sales for output matching network information.

Page 2 of 8

Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

43.5-46.5 GHz GaAs MMIC

Power Amplifier

January 2010 - Rev 22-Jan-10

P1015-BD

Power Amplifier Measurements (On-Wafer¹) (cont.)

XP1015-BD, Vd=5.0 V, Id1,2=720 mA,

Id3=1440 mA, Pin=+22 dBm

43.5

43.6

43.7

43.8

43.9

44.0

44.1

44.2

44.3

44.4

44.5

Frequency (GHz)

Note [1] Measurements – On-Wafer Output Power data has been taken using bias conditions as shown. Measurements are referenced 150 um in

from RF In/Out pad edge. For optimum performance Mimix T-pad transition and tuned output matching network is recommended. For additional

information see the Mimix“T-Pad Transition”application note. Contact technical sales for output matching network information.

Page 3 of 8

Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

43.5-46.5 GHz GaAs MMIC

Power Amplifier

January 2010 - Rev 22-Jan-10

P1015-BD

S-Parameters (On-Wafer¹)

Typcial S-Parameter Data for XP1015-BD

Vd=5.0 V, Id=2880 mA

Frequency

(GHz)

40.0

S11

(Ang)

S21

(Ang)

-43.33

-96.02

-163.39

109.09

5.18

-97.40

166.33

71.96

S12

(Mag)

S12

(Ang)

-29.24

-51.32

-75.76

-150.54

-176.53

143.48

104.76

60.00

S22

(Ang)

(Mag)

0.071

0.068

0.075

0.095

0.127

0.144

0.137

0.140

0.160

0.168

(Mag)

0.367

0.770

1.685

3.596

5.310

5.355

4.301

2.738

1.331

0.617

0.312

(Mag)

0.091

0.096

0.092

0.086

0.077

0.119

0.128

0.141

0.131

0.122

0.126

-147.39

-130.09

-118.57

-120.38

-124.74

-129.24

-134.59

-140.71

-140.39

-139.09

-146.86

0.0014

0.0028

0.0030

0.0035

0.0038

0.0012

0.0053

0.0015

0.0034

0.0026

0.0024

-148.24

-150.66

-152.02

-146.68

-138.86

-129.44

-140.49

-141.79

-144.14

-154.11

-150.28

41.0

42.0

43.0

44.0

45.0

46.0

47.0

48.0

-7.55

-70.52

-121.92

1.61

12.02

-58.20

49.0

50.0

Note [1] S-Parameters – On-Wafer S-Parameters have been taken using reduced bias conditions as shown. Measurements are referenced 150 um in

from RF In/Out pad edge.

Page 4 of 8

Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

43.5-46.5 GHz GaAs MMIC

Power Amplifier

January 2010 - Rev 22-Jan-10

P1015-BD

1.226

(0.048)

1.725

(0.068)

2.225 2.625

(0.088) (0.103)

3.225

(0.127)

3.827

(0.151)

Mechanical Drawing

4.630

(0.182)

2.620

(0.103)

2.006

(0.079)

XP1015-BD

0.0

1.226

(0.048)

1.725

(0.068)

2.225

(0.088) (0.103)

2.625

3.225

(0.127)

4.650

(0.183)

3.827

(0.151)

0.0

(Note: Engineering designator is 44MPA0475)

Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.

Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold

All DC Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008)

Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.

Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 13.349 mg.

Bond Pad #1 (RF In)

Bond Pad #2 (Vg1A)

Bond Pad #3 (Vd1A)

Bond Pad #4 (Vg2A)

Bond Pad #5 (Vd2A)

Bond Pad #6 (Vg3A)

Bond Pad #7 (Vd3A)

Bond Pad #8 (RF Out)

Bond Pad #9 (Vd3B)

Bond Pad #10 (Vg3B)

Bond Pad #11 Vd2B)

Bond Pad #12 (Vg2B)

Bond Pad #13 (Vd1B)

Bond Pad #14 (Vg1B)

Bypass Capacitors - See App Note [2]

Bias Arrangement

Vg1

Vg2

Vg3

RF In

RF Out

XP1015-BD

Vd1

Vd2

Vd3

Page 5 of 8

Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

43.5-46.5 GHz GaAs MMIC

Power Amplifier

January 2010 - Rev 22-Jan-10

P1015-BD

App Note [1] Biasing - It is recommended to separately bias each amplifier stage Vd1 through

Vd3 at Vd(1,2,3)=5.0V with Id1=Id2=720mA and Id3=1440mA. Separate biasing is recommended

if the amplifier is to be used at high levels of saturation, where gate rectification will alter the

effective gate control voltage. For non-critical applications it is possible to parallel all stages and

adjust the common gate voltage for a total drain current Id(total)=2880 mA.

[Linear Applications] - For applications where the amplifier is being used in linear operation,

where best IM3 (Third-Order Intermod) performance is required at more than 5dB below P1dB,

it is also recommended to use active gate biasing to keep the drain currents constant as the RF

power and temperature vary; this gives the best performance and most reproducible results.

Depending on the supply voltage available and the power dissipation constraints, the bias

circuit may be a single transistor or a low power operational amplifier, with a low value resistor

in series with the drain supply used to sense the current.The gate voltage of the pHEMT is

controlled to maintain correct drain current compensating for changes over temperature.

[Saturated Applications] - For applications where the amplifier RF output power is saturated, the optimum drain current will vary with RF drive and

each amplifier stage is best operated at a constant gate voltage. Significant gate currents will flow at saturation and bias circuitry must allow for

drain current growth under this condition to achieve best RF output power and power added efficiency. Additionally, if the input RF power level will

vary significantly, a more negative gate voltage will result in less die heating at lower RF input drive levels where the absence of RF cooling becomes

significant. Note under this bias condition, gain will then vary with RF drive.

NOTE! - For any application it is highly recommended to bias the output amplifier stage from both sides for best RF and thermal performance.

CAUTION! - Also, make sure to properly sequence the applied voltages to ensure negative gate bias (Vg1,2,3) is available before applying the

positive drain supply (Vd1,2,3). Additionally, it is recommended that the device gates are protected with Silicon diodes to limit the applied voltage.

App Note [2] Bias Arrangement -

[For Individual Stage Bias] (recommended for linear/saturated applications) - Each DC pad (Vd1,2,3 and Vg1,2,3) needs to have DC bypass

capacitance (100-200 pF) as close to the device as possible. Additional DC bypass capacitance (1 nF and 3.3 uF) is also recommended. All DC pads

have been tied together on chip and device can be biased from either side.

[For Parallel Stage Bias] (general applications) - The same as Individual Stage Bias but all the drain or gate pad DC bypass capacitors (100-200 pF)

are tied together at one point after bypass capacitance. Additional DC bypass capacitance (1 nF and 3.3 uF) is also recommended to all DC or

combination (if gate or drains are tied together) of DC bias pads. All DC pads have been tied together on chip and can be biased from either side.

NOTE! In either arrangement, for most stable performance all unused DC pads must also be bypassed with at least 100-200 pf capacitance.

App Note [3] Material Stack-Up – In addition to the practical aspects of bias and bias arrangement, device base

material stack-up also must be considered for best thermal performance. A well thought out thermal path

solution will improve overall device reliability, RF performance and power added efficiency.The photo shows a

typical high power amplifier carrier assembly.The material stack-up for this carrier is shown below.This stack-up

is highly recommended for most reliable performance however, other materials (i.e. eutectic solder vs epoxy,

copper tungsten/copper moly rib, etc.) can be considered/possibly used but only after careful review of material

thermal properties, material availability and end application performance requirements.

MMIC, 4mil

Alumina Substrate

Diemat DM6030HK Epoxy, ~1mil

AuSn Eutectic Solder

MOLY Rib, 5mil, Au plated

MOLY Carrier, 25mil

Au plated

Copper Block

Page 6 of 8

Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

43.5-46.5 GHz GaAs MMIC

Power Amplifier

January 2010 - Rev 22-Jan-10

P1015-BD

MTTF Graphs

These numbers were calculated based upon accelerated life test information received from the fabricating foundry and extensive

thermal modeling/finite element analysis done at Mimix Broadband.The values shown here are only to be used as a guideline

against the end application requirements and only represent reliability information under one bias condition. Ultimately bias

conditions and resulting power dissipation along with the practical aspects, i.e. thermal material stack-up, attach method of device

placement are the key parts in determining overall reliability for a specific application, see previous pages. If the data shown below

does not meet your reliability requirements or if the bias conditions are not within your operating limits please contact technical

sales for additional information.

XP1015-BD Vd=5.0 V, Id1=720 mA

Id2=720 mA, Id3=1440 mA

P1015-BD Vd=5.0 V, Id1=720 mA

Id2=720 mA, Id3=1440 mA

1.0E+07

1.0E+06

1.0E+05

1.0E+04

1.0E+03

1.00E+06

1.00E+05

1.00E+04

1.00E+03

1.00E+02

105

115

125

105

115

125

Backplate Temperature (deg C)

XP1015-BD Vd=5.0 V, Id1=720 mA

Id2=720 mA Id3=1440 mA

XP1015-BD Vd=5.0 V, Id1=720 mA

Id2=720 mA Id3=1440 mA

260

250

240

230

220

210

200

190

180

170

160

9.0

8.8

8.6

8.4

8.2

8.0

7.8

7.6

7.4

7.2

7.0

150

105

115

125

105

115

125

Backplate Temperature (deg C)

Page 7 of 8

Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

43.5-46.5 GHz GaAs MMIC

Power Amplifier

January 2010 - Rev 22-Jan-10

P1015-BD

Handling and Assembly Information

CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the

environment. For safety, observe the following procedures:

• Do not ingest.

• Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these

by-products are dangerous to the human body if inhaled, ingested, or swallowed.

• Observe government laws and company regulations when discarding this product.This product must be discarded in

accordance with methods specified by applicable hazardous waste procedures.

Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or

systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life

support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain

life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be

reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or

system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its

safety or effectiveness.

ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic

containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. Devices need

careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers.

Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to

enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible.The mounting surface should

be clean and flat. If using conductive epoxy, recommended epoxy is Die Mat DM6030HK or an epoxy with >52 W/m ºK thermal

conductivity cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the

top surface of the die. An epoxy fillet should be visible around the total die periphery. For additional information please see the

Mimix "Epoxy Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform,

approximately 0.001²thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated

collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended.

The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 ºC (Note: Gold Germanium should be avoided).The

work station temperature should be 310 ºC +/- 10 ºC. Exposure to these extreme temperatures should be kept to minimum.The

collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are

critical during placement.

Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond

pads.The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with

0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for

DC Bias connections. Aluminum wire should be avoided.Thermo-compression bonding is recommended though thermosonic

bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical

parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as

possible.

Ordering Information

Part Number for Ordering Description

XP1015-BD-000V

Where“V”is RoHS compliant die packed in vacuum release gel paks

XP1015-BD-EV1

XP1015 die evaluation module

Caution: ESD Sensitive

Appropriate precautions in handling, packaging

and testing devices must be observed.

Proper ESD procedures should be followed when handling this device.

Page 8 of 8

Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

XP1015-BD_10 [MIMIX]

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