XP1017-BD_10 [MIMIX]
30.0-36.0 GHz GaAs MMIC; 30.0-36.0 GHz的砷化镓MMIC
| 型号： | XP1017-BD_10 |
| 厂家： | 
MIMIX BROADBAND |
| 描述： | 30.0-36.0 GHz GaAs MMIC |
| 文件： | 总8页 (文件大小：1065K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
30.0-36.0 GHz GaAs MMIC
Power Amplifier
January 2010 - Rev 23-Jan-10
P1017-BD
Features
Chip Device Layout
Balanced Design Provides Good Input/Output Match
On-Chip Temperature Compensated Output
Power Detector
16.0 dB Small Signal Gain
+33.0 dBm Third Order Intercept (OIP3)
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
XP1017-BD
General Description
Mimix Broadband’s two stage 30.0-36.0 GHz GaAs
MMIC power amplifier is optimized for linear operation
with a third order intercept point of +33.0 dBm.The
device also includes Lange couplers to achieve good
input/output return loss and an on-chip temperature
compensated output power detector.This MMIC uses
Mimix Broadband’s GaAs PHEMT device model
technology, and is based upon electron beam
lithography to ensure high repeatability and uniformity.
The chip has surface passivation to protect and provide
a rugged part with backside via holes and gold
metallization to allow either a conductive epoxy or
eutectic solder die attach process.This device is well
suited for Millimeter-wave Point-to-Point Radio, LMDS,
SATCOM and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage
Input Power (Pin)
+6.0 VDC2
950 mA
+0.3 VDC
+15 dBm
Storage Temperature (Tstg) -65 to +165 ºC
Operating Temperature (Ta) -55 to +85ºC
Channel Temperature (Tch)1 +175 ºC
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
(2) Under pulsed bias conditions, under CW Psat conditions
further reduction in max supply voltage (~0.5V) is
recommended.
Electrical Characteristics (AmbientTemperatureT = 25 oC)
Parameter
Units
GHz
dB
dB
dB
Min.
30.0
-
-
-
-
-
-
Typ.
-
Max.
36.0
-
-
-
-
-
-
-
+5.5
0.0
880
-
Frequency Range (f)
Input Return Loss (S11)
16.0
20.0
16.0
+/-0.5
40.0
+24.0
+33.0
+4.5
-0.7
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
dB
dB
2
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept Point (OIP3)
Drain Bias Voltage (Vd1,2,3,4)
dBm
dBm
VDC
VDC
mA
VDC
1,2
-
-
Gate Bias Voltage (Vg1,2,3,4)
-1.0
-
-
Supply Current (Id) (Vd=4.5V,Vg=-0.7V Typical)
440
0.3
3
Detector (diff) Output at 20 dBm
(1) Measured at +17 dBm per tone output carrier level across the full frequency band.
(2) Measured using constant current.
(3) Measured with either Vin=1.0V or Vin=5.5V and Rin=5.6k
.
Page 1 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
30.0-36.0 GHz GaAs MMIC
Power Amplifier
January 2010 - Rev 23-Jan-10
P1017-BD
Power Amplifier Measurements (On-Wafer1)
XP1017-BD, Vd=4.5 V, Id1,2,3,4=110 mA
XP1017-BD, Vd=4.5 V, Id1,2,3,4=110 mA
20
19
18
17
16
15
14
13
12
11
10
30
20
10
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
28.0
29.0
30.0
31.0
32.0
33.0
34.0
35.0
36.0
37.0
38.0
20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0 42.0 44.0
Frequency (GHz)
Frequency (GHz)
XP1017-BD, Vd=4.5 V, Id1,2,3,4=110 mA
XP1017-BD, Vd=4.5 V, Id1,2,3,4=110 mA
0
-5
0
-5
-10
-15
-20
-25
-30
-35
-40
-10
-15
-20
-25
-30
-35
-40
28.0
29.0
30.0
31.0
32.0
33.0
34.0
35.0
36.0
37.0
38.0
20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0 42.0 44.0
Frequency (GHz)
XP1017-BD, Vd=4.5 V, Id1,2,3,4=110 mA
Frequency (GHz)
XP1017-BD, Vd=4.5 V, Id1,2,3,4=110 mA
0
-5
0
-5
-10
-15
-20
-25
-30
-35
-10
-15
-20
-25
-30
-35
28.0
29.0
30.0
31.0
32.0
33.0
34.0
35.0
36.0
37.0
38.0
20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0 42.0 44.0
Frequency (GHz)
Frequency (GHz)
Note [1] Measurements – On-Wafer S-Parameters have been taken using reduced bias conditions as shown. Measurements are referenced 150 um in
from RF In/Out pad edge. For optimum performance Mimix T-pad transition and tuned output matching network is recommended. For additional
information see the Mimix“T-Pad Transition”application note. Contact technical sales for output matching network information.
Page 2 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
30.0-36.0 GHz GaAs MMIC
Power Amplifier
January 2010 - Rev 23-Jan-10
P1017-BD
Power Amplifier Measurements (On-Wafer1) (cont.)
XP1017-BD, Vd=4.5 V (1142 devices)
XP1017-BD, Vd=4.5 V (1142 devices)
20
19
18
17
16
15
14
13
12
11
10
9
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
8
7
Max
33
Median
34
Mean
36
-3sigma
37
Max
Median
34
Mean
-3sigma
37
6
5
28
29
30
31
32
35
38
28
29
30
31
32
33
35
36
38
Frequency (GHz)
Frequency (GHz)
XP1017-BD, Vd=4.5 V (1142 devices)
XP1017-BD, Vd=4.5 V (1142 devices)
0
0
-5
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
-10
-15
-20
-25
-30
-35
Max
Median
34
Mean
-3sigma
37
Max
33
Median
34
Mean
36
-3sigma
37
28
29
30
31
32
33
35
36
38
28
29
30
31
32
35
38
Frequency (GHz)
Frequency (GHz)
XP1017-BD, Vd=4.5 V (1142 devices)
XP1017-BD, Vd=4.5 V, Id1,2,3,4=110mA, Pout=+15dBm/tone
29
28
27
26
25
24
23
22
21
20
19
40
39
38
37
36
35
34
33
32
31
30
Max
33
Median
Mean
-3sigma
30
31
32
34
35
36
30.0
31.0
32.0
33.0
34.0
35.0
36.0
37.0
Frequency (GHz)
Frequency (GHz)
Note [1] Measurements – On-Wafer Output Power data has been taken using bias conditions as shown. Measurements are referenced 150 um in
from RF In/Out pad edge. For optimum performance Mimix T-pad transition and tuned output matching network is recommended. For additional
information see the Mimix“T-Pad Transition”application note. Contact technical sales for output matching network information.
Page 3 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
30.0-36.0 GHz GaAs MMIC
Power Amplifier
January 2010 - Rev 23-Jan-10
P1017-BD
S-Parameters (On-Wafer1)
Typical S-Parameter Data for XP1017-BD
Vd=4.5 V Id=440 mA
Frequency
(GHz)
20.0
21.0
22.0
23.0
24.0
25.0
26.0
27.0
28.0
29.0
30.0
31.0
32.0
33.0
34.0
35.0
36.0
37.0
38.0
39.0
40.0
41.0
42.0
43.0
44.0
45.0
46.0
47.0
48.0
49.0
50.0
S11
S11
(Ang)
S21
S21
(Ang)
S12
(Mag)
S12
(Ang)
81.96
49.28
-162.91
57.19
30.59
-6.93
-78.85
-136.58
-143.25
80.24
S22
S22
(Ang)
(Mag)
0.035
0.045
0.046
0.039
0.036
0.060
0.098
0.158
0.238
0.305
0.325
0.264
0.201
0.188
0.169
0.133
0.091
0.031
0.112
0.219
0.268
0.325
0.310
0.318
0.349
0.329
0.295
0.307
0.238
0.192
0.175
(Mag)
0.552
0.621
0.716
0.863
1.047
1.301
1.669
2.217
3.015
4.231
5.329
6.094
6.446
6.589
6.724
6.964
6.782
5.422
3.615
2.361
1.565
1.014
0.734
0.525
0.376
0.270
0.201
0.141
0.109
0.079
0.060
(Mag)
0.076
0.062
0.055
0.045
0.045
0.047
0.052
0.064
0.077
0.070
0.061
0.052
0.060
0.066
0.097
0.096
0.087
0.079
0.062
0.069
0.086
0.152
0.120
0.130
0.135
0.135
0.153
0.177
0.217
0.248
0.289
143.45
120.38
96.68
55.14
-2.38
106.42
82.11
58.00
30.85
5.90
-19.84
-46.88
-76.47
-110.45
-154.09
160.52
113.79
67.68
0.0013
0.0006
0.0002
0.0002
0.0002
0.0010
0.0004
0.0007
0.0014
0.0008
0.0020
0.0027
0.0039
0.0065
0.0077
0.0119
0.0146
0.0131
0.0099
0.0066
0.0066
0.0048
0.0013
0.0042
0.0015
0.0046
0.0027
0.0041
0.0036
0.0026
0.0051
-38.79
-54.34
-61.25
-61.94
-67.57
-62.86
-56.48
-64.64
-84.17
-90.87
-105.01
-97.64
-84.83
-82.88
-94.94
-105.59
-123.55
-126.09
-116.87
-102.04
-102.40
-109.34
-103.15
-113.72
-122.34
-123.61
-111.42
-122.44
-128.05
-142.42
-155.49
-49.21
-75.33
-99.96
-124.99
-155.07
173.98
149.89
141.81
135.83
129.91
111.93
123.68
139.91
-140.66
-163.56
177.29
155.59
146.66
132.74
119.58
107.79
90.26
54.78
13.77
-42.05
-77.38
-134.57
-165.68
150.10
98.61
57.52
28.10
7.16
-39.25
-2.65
-122.63
-135.53
-56.04
-179.01
-84.07
-68.32
125.00
126.47
23.01
-21.54
-73.84
-128.22
174.85
125.28
84.27
49.07
13.09
-17.25
-46.73
-76.16
-100.41
-129.59
-157.28
169.47
146.81
121.60
73.65
58.55
35.17
21.75
Note [1] S-Parameters – Measurements are referenced 150 um in from RF In/Out pad edge.
Page 4 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
30.0-36.0 GHz GaAs MMIC
Power Amplifier
January 2010 - Rev 23-Jan-10
P1017-BD
1.141
1.541
1.941
2.341
2.741
2.941
(0.045)
(0.061) (0.076)
(0.092)
(0.108) (0.116)
Mechanical Drawing
2.500
(0.098)
2
3
4
5
6
7
1.851
(0.073)
8
1.710
(0.067)
1
XP1017-BD
14
13
12
11
10
9
0.0
0.0
1.141
(0.045)
1.541
(0.061)
1.941
(0.076)
2.341
2.741 2.941 3.300
(0.092) (0.108) (0.116) (0.130)
(Note: Engineering designator is 32H2BA0070)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All DC Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Pads are 0.100 x 0.200 (0.004 x 0.008).
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 5.115 mg.
Bond Pad #1 (RF In)
Bond Pad #2 (Vg1)
Bond Pad #3 (Vd2)
Bond Pad #4 (Vg2)
Bond Pad #5 (Vd2)
Bond Pad #6 (VDIF1)
Bond Pad #7 (VIN2)
Bond Pad #8 (RF Out)
Bond Pad #9 (VIN1)
Bond Pad #10 (VDIF2)
Bond Pad #11 (Vd4)
Bond Pad #12 (Vg4)
Bond Pad #13 (Vd3)
Bond Pad #14 (Vg3)
Bias Arrangement
Vd1,2
Bypass Capacitors - See App Note [3]
VDIF2
VIN2
Vg1,2
2
3
4
5
6
7
8
RF Out
1
RF In
XP1017-BD
14
13
12
11
10
9
Vg3,4
VIN1
VDIF1
Vd3,4
Page 5 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
30.0-36.0 GHz GaAs MMIC
Power Amplifier
January 2010 - Rev 23-Jan-10
P1017-BD
App Note [1] Biasing - It is recommended to separately bias the upper and lower amplifiers at
Vd(1,2)=4.5V Id(1+2)=220mA, and Vd(3,4)=4.5V Id(3+4)=220mA, although best performance
will result in separately biasing Vd1 through Vd4, with Id1=Id3=110mA, Id2=Id4=110mA.
Separate biasing is recommended if the amplifier is to be used in a linear application or at high
levels of saturation, where gate rectification will alter the effective gate control voltage. For
non-critical applications it is possible to parallel all stages and adjust the common gate voltage
for a total drain current Id(total)=440mA.
[Linear Applications] - For applications where the amplifier is being used in linear operation,
where best IM3 (Third-Order Intermod) performance is required at more than 5dB below P1dB,
it is also recommended to use active gate biasing to keep the drain currents constant as the RF
power and temperature vary; this gives the best performance and most reproducible results.
Depending on the supply voltage available and the power dissipation constraints, the bias
circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the
current.The gate voltage of the pHEMT is controlled to maintain correct drain current compensating for changes over temperature.
[Saturated Applications] - For applications where the amplifier RF output power is saturated, the optimum drain current will vary with RF drive and
each amplifier stage is best operated at a constant gate voltage. Significant gate currents will flow at saturation and bias circuitry must allow for
drain current growth under this condition to achieve best RF output power and power added efficiency. Additionally, if the input RF power level will
vary significantly, a more negative gate voltage will result in less die heating at lower RF input drive levels where the absence of RF cooling becomes
significant. Note under this bias condition, gain will then vary with RF drive.
NOTE! - For any application it is highly recommended to bias the output amplifier stage from both sides for best RF and thermal performance.
CAUTION! - Also, make sure to properly sequence the applied voltages to ensure negative gate bias (Vg1,2,3) is available before applying the
positive drain supply (Vd1,2,3). Additionally, it is recommended that the device gates are protected with Silicon diodes to limit the applied voltage.
App Note [2] Bias Arrangement -
[For Individual Stage Bias] (recommended for linear/saturated applications) - Each DC pad (Vd1,2,3 and Vg1,2,3) needs to have DC bypass
capacitance (100-200 pF) as close to the device as possible. Additional DC bypass capacitance (1 nF and 3.3 uF) is also recommended. All DC pads
have been tied together on chip and device can be biased from either side.
[For Parallel Stage Bias] (general applications) - The same as Individual Stage Bias but all the drain or gate pad DC bypass capacitors (100-200 pF)
are tied together at one point after bypass capacitance. Additional DC bypass capacitance (1 nF and 3.3 uF) is also recommended to all DC or
combination (if gate or drains are tied together) of DC bias pads. All DC pads have been tied together on chip and can be biased from either side.
NOTE! In either arrangement, for most stable performance all unused DC pads must also be bypassed with at least 100-200 pf capacitance.
App Note [3] Material Stack-Up – In addition to the practical aspects of bias and bias arrangement, device base
material stack-up also must be considered for best thermal performance. A well thought out thermal path solution
will improve overall device reliability, RF performance and power added efficiency.The photo shows a typical high
power amplifier carrier assembly.The material stack-up for this carrier is shown below.This stack-up is highly
recommended for most reliable performance however, other materials (i.e. eutectic solder vs epoxy, copper
tungsten/copper moly rib, etc.) can be considered/possibly used but only after careful review of material thermal
properties, material availability and end application performance requirements.
MMIC, 4mil
Alumina Substrate
Diemat DM6030HK Epoxy, ~1mil
AuSn Eutectic Solder
MOLY Rib, 5mil, Au plated
MOLY Carrier, 25mil
Au plated
Copper Block
Page 6 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
30.0-36.0 GHz GaAs MMIC
Power Amplifier
January 2010 - Rev 23-Jan-10
P1017-BD
MTTF Graphs
These numbers were calculated based upon accelerated life test information received from the fabricating foundry and extensive
thermal modeling/finite element analysis done at Mimix Broadband.The values shown here are only to be used as a guideline
against the end application requirements and only represent reliability information under one bias condition. Ultimately bias
conditions and resulting power dissipation along with the practical aspects, i.e. thermal material stack-up, attach method of device
placement are the key parts in determining overall reliability for a specific application, see previous pages. If the data shown below
does not meet your reliability requirements or if the bias conditions are not within your operating limits please contact technical
sales for additional information
XP1017-BD Vd=4.5 V, Id1,2,3,4=110 mA
XP1017-BD Vd=4.5 V, Id1,2,3,4=110 mA
1.00E+04
1.00E+03
1.00E+02
1.00E+01
1.00E+00
1.00E-01
1.00E-02
1.00E-03
1.0E+12
1.0E+11
1.0E+10
1.0E+09
1.0E+08
1.0E+07
1.0E+06
1.0E+05
55.0
65.0
75.0
85.0
95.0
105.0
115.0
125.0
55.0
65.0
75.0
85.0
95.0
105.0
115.0
125.0
Backplate Temperature (deg C)
Backplate Temperature (deg C)
XP1017-BD Vd=4.5 V, Id1,2,3,4=110 mA
XP1017-BD Vd=4.5 V, Id1,2,3,4=110 mA
180
170
160
150
140
130
120
110
100
90
27.0
26.5
26.0
25.5
25.0
24.5
24.0
23.5
23.0
22.5
22.0
55.0
65.0
75.0
85.0
95.0
105.0
115.0
125.0
55.0
65.0
75.0
85.0
95.0
105.0
115.0
125.0
Backplate Temperature (deg C)
Backplate Temperature (deg C)
Page 7 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
30.0-36.0 GHz GaAs MMIC
Power Amplifier
January 2010 - Rev 23-Jan-10
P1017-BD
Handling and Assembly Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
Do not ingest.
Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical
processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this product.This product must be
discarded in accordance with methods specified by applicable hazardous waste procedures.
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or
systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life
support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain
life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its
safety or effectiveness.
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic
containers, which should be opened in cleanroom conditions at an appropriately grounded antistatic workstation. Devices need
careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers.
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to
enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible.The mounting surface should
be clean and flat. If using conductive epoxy, recommended epoxy is Die Mat DM6030HK or an epoxy with >52 W/m ºK thermal
conductivity cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the
top surface of the die. An epoxy fillet should be visible around the total die periphery. For additional information please see the
Mimix "Epoxy Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform,
approximately 0.0012 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated
collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended.
The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 ºC (Note: Gold Germanium should be avoided).The
work station temperature should be 310 ºC +/- 10 ºC. Exposure to these extreme temperatures should be kept to minimum.The
collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are
critical during placement.
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond
pads.The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2%
elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias
connections. Aluminum wire should be avoided.Thermo-compression bonding is recommended though thermosonic bonding may
be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds
should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible.
Ordering Information
Part Number for Ordering
XP1017-BD-000V
Description
RoHS compliant die packed in vacuum release gel packs
XP1017-BD evaluation module
XP1017-BD-EV1
Caution: ESD Sensitive
Appropriate precautions in handling, packaging
and testing devices must be observed.
Proper ESD procedures should be followed when handling this device.
Page 8 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
相关型号：
XP1018-BD-000W
Wide Band Medium Power Amplifier, 37000MHz Min, 42000MHz Max, ROHS COMPLIANT, DIE-10
MIMIX
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