XP1019-BD_08 [MIMIX]
17.0-24.0 GHz GaAs MMIC; 17.0-24.0 GHz的砷化镓MMIC
| 型号： | XP1019-BD_08 |
| 厂家： | 
MIMIX BROADBAND |
| 描述： | 17.0-24.0 GHz GaAs MMIC |
| 文件： | 总8页 (文件大小：287K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
17.0-24.0 GHz GaAs MMIC
Power Amplifier
October 2008 - Rev 10-Oct-08
P1019-BD
Features
Chip Device Layout
Excellent Transmit Output Stage
Temperature Compensated Output Detector
18.0 dB Small Signal Gain
+27.0 dBm P1dB Compression Point
100% On-Wafer RF, DC and Output Power Testing
100% Commercial-Level Visual Inspection Using
Mil-Std-883 Method 2010
General Description
Mimix Broadband’s three stage 17.0-24.0 GHz GaAs
MMIC buffer amplifier has a small signal gain of 18.0
dB with a +27.0 dBm P1dB output compression point
across much of the band.The device also includes an
on-chip temperature compensated output power
detector.This MMIC uses Mimix Broadband’s GaAs
PHEMT device model technology, and is based upon
electron beam lithography to ensure high
repeatability and uniformity.The chip has surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die
attach process.This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM
and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1,2,3)
Gate Bias Voltage (Vg)
Input Power (Pin)
+6.0 VDC
145, 290, 580 mA
+0.3 VDC
+19.0 dBm
Storage Temperature (Tstg) -65 to +165 OC
Operating Temperature (Ta) -55 to MTTF Graph1
Channel Temperature (Tch) MTTF Graph1
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (AmbientTemperatureT = 25 oC)
Parameter
Frequency Range (f)
Input Return Loss (S11)
Units
GHz
dB
Min.
17.0
-
Typ.
-
9.0
Max.
24.0
-
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
dB
dB
dB
dB
dBm
VDC
VDC
mA
mA
mA
VDC
-
-
-
-
-
-
10.0
18.0
+/-1.0
45.0
+27.0
+5.0
-0.7
100
200
400
0.38
-
-
-
-
-
Reverse Isolation (S12)
2
Output Power for 1dB Compression (P1dB)
Drain Bias Voltage (Vd1,2,3) (Vdet)
Gate Bias Voltage (Vg1,2,3)
Supply Current (Id1) (Vd=5.0V,Vg=-0.7V Typical)
Supply Current (Id2) (Vd=5.0V,Vg=-0.7V Typical)
Supply Current (Id3) (Vd=5.0V,Vg=-0.7V Typical)
Detector (diff) Output at 20 dBm3
+5.5
0.0
120
240
480
-
-1.0
-
-
-
-
(2) Measured using constant current.
(3) Measured with Vd4=5.0V
Page 1 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
17.0-24.0 GHz GaAs MMIC
Power Amplifier
October 2008 - Rev 10-Oct-08
P1019-BD
Power Amplifier Measurements
XP1019 Vd=5.0 V Id1=100 mA, Id2=200 mA, Id3=400mA
XP1019 Vd=5.0 V Id1=100 mA, Id2=200 mA, Id3=400mA
20
19
18
17
16
15
14
13
12
11
10
0
-10
-20
-30
-40
-50
-60
-70
-80
15.0
16.0
17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
25.0
26.0
15.0
16.0
17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
25.0
26.0
Frequency (GHz)
Frequency (GHz)
XP1019 Vd=5.0 V Id1=100 mA, Id2=200 mA, Id3=400mA
XP1019 Vd=5.0 V Id1=100 mA, Id2=200 mA, Id3=400mA
5
0
-5
0
-5
-10
-15
-20
-25
-30
-35
-40
-10
-15
-20
-25
15.0
16.0
17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
25.0
26.0
15.0
16.0
17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
25.0
26.0
Frequency (GHz)
Frequency (GHz)
0696ND 028AB201 (BCB): Pout vs. Freq @ Pin=+13 dBm
Vd1=Vd2=Vd3=5 V, regulated Id1=100 mA, Id2=200 mA, Id3=400 mA
, RC=R10C3
, RC=R10C4
, RC=R10C5
, RC=R10C6
, RC=R10C7
, RC=R10C8
, RC=R11C3
, RC=R11C6
, RC=R11C7
, RC=R11C8
, RC=R12C4
, RC=R12C5
, RC=R12C6
, RC=R12C7
, RC=R12C8
, RC=R13C5
, RC=R13C6
, RC=R13C7
, RC=R13C8
, RC=R14C6
, RC=R14C7
, RC=R14C8
, RC=R9C3
30
29
28
27
26
25
24
23
22
21
20
, RC=R9C4
, RC=R9C5
17 17.5 18 18.5 19 19.5 20 20.5 21 21.5 22 22.5 23 23.5 24
Frequency (GHz)
, RC=R9C6
Page 2 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
17.0-24.0 GHz GaAs MMIC
Power Amplifier
October 2008 - Rev 10-Oct-08
P1019-BD
S-Parameters
Typical S-Parameter Data for XP1019
Vd=5.0 V Id=700 m A
Frequency
(GHz)
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
25.0
26.0
27.0
28.0
29.0
30.0
S11
S11
(Ang)
122.39
112.12
89.89
S21
S21
(Ang)
S12
(Mag)
S12
S22
S22
(Ang)
(Mag)
0.252
0.373
0.391
0.349
0.279
0.237
0.260
0.314
0.356
0.363
0.355
0.351
0.294
0.167
0.193
0.373
0.479
0.563
0.646
0.723
0.779
(Mag)
0.379
0.920
1.507
2.365
3.747
5.584
7.363
8.498
8.985
8.815
8.498
8.600
9.007
9.510
8.785
6.139
3.595
1.901
0.923
0.422
0.188
(Ang)
-163.87
172.52
159.33
137.93
108.61
112.87
106.94
102.86
74.88
(Mag)
0.890
0.872
0.858
0.829
0.776
0.687
0.566
0.426
0.264
0.078
0.086
0.202
0.285
0.335
0.356
0.381
0.451
0.573
0.704
0.797
0.850
-26.37
-102.87
-169.30
133.83
76.53
0.0003
0.0006
0.0007
0.0010
0.0008
0.0009
0.0010
0.0010
0.0021
0.0023
0.0022
0.0006
0.0004
0.0008
0.0010
0.0011
0.0008
0.0006
0.0004
0.0003
0.0006
-89.12
-98.32
-108.64
-120.69
-134.36
-149.39
-165.22
178.12
157.69
138.88
-77.25
-91.01
-113.09
-139.02
-170.99
145.32
95.77
61.57
22.84
-28.45
-78.69
-114.97
-142.47
-162.55
-177.85
164.00
136.19
83.71
-39.25
-94.57
-119.90
-134.63
-146.72
-158.47
-169.75
14.91
-49.63
-113.35
-174.76
126.97
72.57
33.03
-12.77
-41.57
5.99
20.82
1.80
-24.23
-61.44
-89.82
-107.07
-105.82
168.26
19.84
-35.96
-98.83
-171.72
113.00
44.81
-17.57
-73.69
-122.99
-165.79
50.86
15.17
-11.82
-32.73
Page 3 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
17.0-24.0 GHz GaAs MMIC
Power Amplifier
October 2008 - Rev 10-Oct-08
P1019-BD
0.840
1.334
1.788
Mechanical Drawing
(0.033)
(0.053)
(0.070)
1.330
(0.052)
2
3
4
0.683
0.683
(0.027)
1
5
6
(0.027)
11
10
7
9
8
0.0
2.236
2.510
0.588
0.947
1.650 1.930
0.0
(0.088) (0.099)
2.400
(0.023) (0.037)
(0.065) (0.076)
(0.094)
(Note: Engineering designator is 20MPA0723)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All DC Bond Pads (except Vd3) are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads (and Vd3) are 0.100 x 0.200 (0.004 x 0.008)
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 2.07 mg.
Bond Pad #1 (RF In)
Bond Pad #2 (Vd1)
Bond Pad #3 (Vd2)
Bond Pad #4 (Vd3)
Bond Pad #5 (RF Out) Bond Pad #7 (Vdet)
Bond Pad #6 (Ref) Bond Pad #8 (Det)
Bond Pad #9 (Vg3)
Bond Pad #10 (Vg2)
Bond Pad #11 (Vg1)
Bias Arrangement
Vd2
Vd1
Vd3
Bypass Capacitors - See App Note [2]
2
3
4
RF Out
RF In
1
5
6
11
10
7
9
8
Ref
Vdet
Vg1
Det
Vg3
Vg2
Page 4 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
17.0-24.0 GHz GaAs MMIC
Power Amplifier
October 2008 - Rev 10-Oct-08
P1019-BD
App Note [1] Biasing - It is recommended to separately bias each amplifier stage Vd1 through Vd3 at Vd(1,2,3)=5.0V with Id1=100mA, Id2=200mA
and Id3=300mA. Separate biasing is recommended if the amplifier is to be used at high levels of saturation, where gate rectification will alter the
effective gate control voltage. For non-critical applications it is possible to parallel all stages and adjust the common gate voltage for a total drain
current Id(total)=700 mA. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this
gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a
single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current.The gate of
the pHEMT is controlled to maintain correct drain current and thus drain voltage.The typical gate voltage needed to do this is -0.7V.Typically the
gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is
available before applying the positive drain supply.
App Note [2] Bias Arrangement -
For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC bypass
capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if gate or
drains are tied together) of DC bias pads.
For Individual Stage Bias (Recommended for saturated applications) -- Each DC pad (Vd1,2,3 and Vg1,2,3) needs to have DC bypass capacitance
(~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
App Note [3] On Board Detector – The output signal of the power amplifier is coupled via a 15 dB directional coupler to a detector, which
comprises a diode connected to the signal path, and a second diode used to provide a temperature compensation signal.The common bias
terminal is Vdet, and is nominally set to forward bias both diodes.The Vdet port can be connected directly to a 5V bias, and given the internal series
resistance, results in about 1mA of bias current.
App Note [4] Output Power Adjust Using Drain/Gate Control – This device has a very useful additional feature.The output power can be
adjusted by lowering the combined drain voltages and individual or combined gate voltages towards pinch off without sacrificing much in the way
of Input/Output 3rd Order Intercept Point. Improvements to the IIP3/OIP3 while attenuating the gain are also possible with individual gate control.
Data here has been taken using combined drain and gate control (all gates changed together) to lower the device’s output power.The results are
shown below. Additionally, the accompanying graph shows the typical level of attenuation achievable as the drain and gate is adjusted at various
levels until pinch-off.
0696ND with BCB: Pout vs. DA Value @ Pin=+5 dBm
R10C10_0696ND_C_029BA101 vs Pin: Video (mV) vs. Power out (dBm)
Vd123=5 -> 1.5 V, Id1=100 -> 0 mA, Id2=200 -> 0 mA, Id3=400 -> 0 mA
30
, Input Freq (GHz)=17.5
1200
, VDR=1.5
, Input Freq (GHz)=18
25
1100
1000
900
800
700
600
500
400
300
200
100
0
, VDR=1.6
, VDR=1.7
, VDR=1.8
, VDR=1.9
, VDR=2
, Input Freq (GHz)=18.5
, Input Freq (GHz)=19
, Input Freq (GHz)=19.5
, Input Freq (GHz)=17.5
, Input Freq (GHz)=18
, Input Freq (GHz)=18.5
, Input Freq (GHz)=19
, Input Freq (GHz)=19.5
, Input Freq (GHz)=17.5
, Input Freq (GHz)=18
, Input Freq (GHz)=18.5
, Input Freq (GHz)=19
, Input Freq (GHz)=19.5
20
15
10
5
, VDR=2.1
, VDR=2.2
, VDR=2.3
, VDR=2.4
, VDR=2.5
, VDR=3
0
-5
-10
-15
-20
-25
-30
, VDR=3.5
, VDR=4
, VDR=4.5
, VDR=5
0
1
2
3
4
5
6
7
8
9 101112131415161718192021222324252627282930
Power out (dBm)
16
17
18
19
20
21
22
23
24
Frequency (GHz)
Page 5 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
17.0-24.0 GHz GaAs MMIC
Power Amplifier
October 2008 - Rev 10-Oct-08
P1019-BD
MTTF Graph
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
XP1019 Vd=5.0 V, Id1=100 mA, Id2=200 mA, Id3=400 mA
1.00E+09
1.00E+08
1.00E+07
1.00E+06
1.00E+05
1.00E+04
1.00E+03
55
65
75
85
95
105
115
125
Backplate Temperature (deg C)
No RF
Pout=+27 dBm
XP1019 Vd=5.0 V, Id1=100 mA, Id2=200 mA, Id3=400 mA
1.00E+05
1.00E+04
1.00E+03
1.00E+02
1.00E+01
1.00E+00
55
65
75
85
95
105
115
125
Backplate Temperature (deg C)
No RF
Pout=+27 dBm
XP1019 Vd=5.0 V, Id1=100 mA, Id2=200 mA, Id3=400 mA
XP1019 Vd=5.0 V, Id1=100 mA, Id2=200 mA, Id3=400 mA
37
35
33
31
29
27
25
275
250
225
200
175
150
125
55
55
65
75
85
95
105
115
125
65
75
85
95
105
115
125
Backplate Temperature (deg C)
Backplate Temperature (deg C)
No RF
Pout=+27 dBm
No RF
Pou t=+27 dBm
Page 6 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
17.0-24.0 GHz GaAs MMIC
Power Amplifier
October 2008 - Rev 10-Oct-08
P1019-BD
Device Schematic
VD1
VD2
VD3
stage 1
stage 2
stage 3
RFin
RFout
VG1
VG2
VG3
Typical Application
XU1002
XB1004
XP1019
Sideband
Reject
RF Out
17.7-19.7 GHz
IF IN
2.0 GHz
LO(+2.0dBm)
7.85-8.85 GHz (USB Operation)
9.85-10.85 GHz (LSB Operation)
Mimix Broadband MMIC-based 18.0-25.0 GHz Transmitter Block Diagram
(Changing LO and IF frequencies as required allows design to operate as high as 25.0 GHz)
Mimix Broadband's 18.0-25.0 GHz XU1002 GaAs MMIC Transmitter can be used in saturated radio applications and linear modulation
schemes up to 16 QAM.The transmitter can be used in upper and lower sideband applications from 18.0-25.0 GHz.
Page 7 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
17.0-24.0 GHz GaAs MMIC
Power Amplifier
October 2008 - Rev 10-Oct-08
P1019-BD
Handling and Assembly Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body
and the environment. For safety, observe the following procedures:
• Do not ingest.
• Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical
processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this product.This product must be
discarded in accordance with methods specified by applicable hazardous waste procedures.
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or
systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1)
Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b)
support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in
the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component
of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic
containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. Devices
need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers.
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to
enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible.The mounting surface
should be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM6030HK or
DM6030HK-Pt cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any
on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. For additional information
please see the Mimix "Epoxy Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless gold-
tin (AuSn) preform, approximately 0.0012 thick, placed between the die and the attachment surface should be used. A die
bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a
nitrogen atmosphere is recommended.The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280º C
(Note: Gold Germanium should be avoided).The work station temperature should be 310ºC +/- 10ºC. Exposure to these
extreme temperatures should be kept to minimum.The collet should be heated, and the die pre-heated to avoid excessive
thermal shock. Avoidance of air bridges and force impact are critical during placement.
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold
bond pads.The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon
with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are
acceptable for DC Bias connections. Aluminum wire should be avoided.Thermo-compression bonding is recommended
though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and
ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All
bonds should be as short as possible.
Ordering Information
Part Number for Ordering
Description
XP1019-BD-000X
Where“X”is RoHS compliant die packed in“V”- vacuum release gel paks or
“W”- waffle trays
XP1019-BD-EV1
XP1019 die evaluation module
Caution: ESD Sensitive
Appropriate precautions in handling, packaging
and testing devices must be observed.
Proper ESD procedures should be followed when handling this device.
Page 8 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
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