XX1000-BD-000V [MIMIX]

7.5-25.0/15.0-50.0 GHz GaAs MMIC Active Doubler; 7.5-25.0 / 15.0-50.0 GHz的砷化镓MMIC有源倍频器


型号：	XX1000-BD-000V
厂家：	MIMIX BROADBAND
描述：	7.5-25.0/15.0-50.0 GHz GaAs MMIC Active Doubler 7.5-25.0 / 15.0-50.0 GHz的砷化镓MMIC有源倍频器倍频器
文件：	总6页 (文件大小：301K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

7.5-25.0/15.0-50.0 GHz GaAs MMIC

Active Doubler

March 2007 - Rev 26-Mar-07

X1000-BD

Features

Chip Device Layout

Excellent Broadband Mixer Driver

Single Ended Fed Doubler with Distributed

Buffer Amplifier

Excellent LO Driver for Mimix Receivers

+15 dBm Output Drive

100% On-Wafer RF, DC and Output Power Testing

100% Visual Inspection to MIL-STD-883

Method 2010

General Description

Mimix Broadband’s single ended fed (no external

balun required) 7.5-25.0/15.0-50.0 GHz GaAs MMIC

doubler has a +15.0 dBm output drive and is an

excellent LO doubler that can be used to drive

fundamental mixer devices. It is also well suited to

drive Mimix's XR1002 receiver device.This MMIC uses

Mimix Broadband’s 0.15 µm GaAs PHEMT device

model technology, and is based upon electron beam

lithography to ensure high repeatability and

uniformity.The chip has surface passivation to protect

and provide a rugged part with backside via holes

and gold metallization to allow either a conductive

epoxy or eutectic solder die attach process.This

device is well suited for Millimeter-wave

Absolute Maximum Ratings

Supply Voltage (Vd)

Supply Voltage (Vss)

Supply Current (Id)

Supply Current (Iss)

Gate Bias Voltage (Vg)

Input Power (RF Pin)

+6.0 VDC

-6.0 VDC

300 mA

60 mA

+0.3 VDC

+12.0 dBm

Storage Temperature (Tstg) -65 to +165 ^OC

Operating Temperature (Ta) -55 to MTTF Table

Channel Temperature (Tch) MTTF Table

(1) Channel temperature affects a device's MTTF. It is

recommended to keep channel temperature as low as

possible for maximum life.

Point-to-Point Radio, LMDS, SATCOM and VSAT

applications.

Electrical Characteristics (AmbientTemperatureT = 25 ^oC)

Parameter

Input Frequency Range (fin)

Units

GHz

Min.

7.5

15.0

Typ.

TBD

12.0

Max.

25.0

50.0

Output Frequency Range (fout)

Input Return Loss (S11)

Output Return Loss (S22)

Harmonic Gain (fout)

Fundamental Rejection (fin)

Saturated Output Power (Psat)

RF Input Power (RF Pin)

dBc

dBm

VDC

+15

+13.0

+5.0

-0.6

0.0

220

-5.0

-10.0

-1.2

-5.5

+10.0

Output Power at +0.0 dBm Pin (Pout)

Drain Bias Voltage (Vd1,2)

Gate Bias Voltage (Vg1)

+5.5

+0.1

250

-2.0

Gate Bias Voltage (Vg2)

Supply Current (Id1,2) (Vd=5.0V,Vg1=-0.6V,Vg2=0.0V Typical)

Source Voltage (Vss)

VDC

Source Current (Iss)

Page 1 of 6

Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

7.5-25.0/15.0-50.0 GHz GaAs MMIC

Active Doubler

March 2007 - Rev 26-Mar-07

X1000-BD

Doubler Measurements

Harmonic Gain and Fundamental Rejection vs Output Freq.

Pin = 0 dBm

XX1000-BD: Pout (2xFin) an d Po ut (F in) v s. F in (GHz)

Pin = -8 to +6 dBm

P out (2xF in)

, Pin (dB m)=-8

, Pin (dB m)=-6

, Pin (dB m)=-4

, Pin (dB m)=-2

, P in (dBm)= 0

, P in (dBm)= 2

, P in (dBm)= 4

, P in (dBm)= 6

, Pin (dB m)=-8

, Pin (dB m)=-6

, Pin (dB m)=-4

, Pin (dB m)=-2

, P in (dBm)= 0

, P in (dBm)= 2

, P in (dBm)= 4

, P in (dBm)= 6

-5

P out (Fi n)

-10

-15

-20

-25

Fin ( GHz)

XX1000-BD_4_s amples: Pout (Fin) vs. F in (GHz)

XX1000-BD_4 _sa mples: Po ut (2xFin) vs . Fin (GHz)

Pin=0dBm , VD 1=5V, VG1=-0.6V, VS S= -5V, VD 2=5V ~150mA, VG 2=open

Po ut ( 2xFi n)

P out (2 xF in)

-5

P out (1 xF in)

-10

-15

-20

Fin ( GHz)

Harmonic Products, Pin = +0 dBm (Fin = 6 - 20 GHz)

Harmonic Products, Pin = +5 dBm (Fin = 6 - 20 GHz)

2nd (RF out)

4th

Fund. (0dBm)

2xFin (0dBm)

3xFin (0dBm)

4xFin (0dBm)

5xFin (0dBm)

6xFin (0dBm)

7xFin (0dBm)

Fund. (5dBm)

2xFin (5dBm)

3xFin (5dBm)

4xFin (5dBm)

5xFin (5dBm)

6xFin (5dBm)

7xFin (5dBm)

4th

6th

-5

Fund

-10

-15

-20

-25

-30

-10

-15

-20

-25

-30

6th

5th

7th

3rd

5th

7th

Fout (GHz)

Page 2 of 6

Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

7.5-25.0/15.0-50.0 GHz GaAs MMIC

Active Doubler

March 2007 - Rev 26-Mar-07

X1000-BD

0.295

0.695

(0.012)

(0.027)

Mechanical Drawing

1.620

(0.064)

0.791

(0.031)

0.196

(0.008)

0.0

1.560

0.295 0.494

(0.012)(0.019)

0.894

(0.061)

(0.035)

(Note: Engineering designator is 40DBL0458)

Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.

Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold

All Bond Pads are 0.100 x 0.100 (0.004 x 0.004).

Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.

Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 1.566 mg.

Bond Pad #1 (RF In)

Bond Pad #2 (Vd1)

Bond Pad #3 (Vd2)

Bond Pad #4 (RF Out)

Bond Pad #5 (Vg2)

Bond Pad #6 (Vss)

Bond Pad #7 (Vg1)

Bias Arrangement

Vd1

Vd2

Bypass Capacitors - See App Note [2]

RF In

RF Out

Vg2

Vg1

Vss

Page 3 of 6

Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

7.5-25.0/15.0-50.0 GHz GaAs MMIC

Active Doubler

March 2007 - Rev 26-Mar-07

X1000-BD

App Note [1] Biasing - It is recommended to separately bias each doubler stage with fixed voltages of Vd(1,2)=5.0V,Vss=-5.0V and

Vg1=-0.6V. The typical DC currents are Id1=80mA, Id2=140mA and Iss=50mA. Vg2 can be used for active control biasing of Vd2, or it

can be left open and Vd2 will self bias at approximately 140mA. Maximum output power is achieved with Vss=-5.0V and Iss=50mA

but the device will operate with reduced bias to Vss=-2.0V and Iss=25mA. It is also recommended to use active biasing on Vd2 with

Vg2 to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the

supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational

amplifier, with a low value resistor in series with the drain supply used to sense the current.The gate of the pHEMT is controlled to

maintain correct drain current and thus drain voltage.The typical gate voltage for Vg2=-0.1V.Typically the gate is protected with

Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available

before applying the positive drain supply.

App Note [2] Bias Arrangement -

For Individual Stage Bias (Recommended for doubler applications) -- Each DC pad (Vd1, 2,Vss and Vg1, 2) needs to have DC bypass

capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.

MTTF

1.0E+05

1.0E+04

1.0E+03

1.0E+02

1.0E+01

Bias Conditions: Vd1=Vd2=4.0V, Id1=40 mA, Id2=140 mA,Vss=-5.0V, Iss=50mA

1.0E+00

Temperature (°C)

MTTF is calculated from accelerated life-time data of single devices and assumes isothermal back-plate.

Bias Conditions: Vd1,2 = 5.0V, Id1,2 = 220 mA, Vss = -5.0V, Iss = 50 mA

Page 4 of 6

Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

7.5-25.0/15.0-50.0 GHz GaAs MMIC

Active Doubler

March 2007 - Rev 26-Mar-07

X1000-BD

Device Schematic

Typical Application

XR1002

IF Out

2 GHz

BPF

IR Mixer

RF IN

21.5-23.5 GHz

AGC Control

Atten=0-12dB

LO(+3.0dBm)

XX1000-BD

9.75-11.75 GHz

11.75-12.75 GHz

19.5-21.5 GHz (USB Operation)

23.5-25.5 GHz (LSB Operation)

Mimix Broadband MMIC-based 18.0-34.0 GHz Doubler/Receiver Block Diagram

(Changing LO and IF frequencies as required allows design to operate as high as 34 GHz)

Page 5 of 6

Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

7.5-25.0/15.0-50.0 GHz GaAs MMIC

Active Doubler

March 2007 - Rev 26-Mar-07

X1000-BD

Handling and Assembly Information

CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the

environment. For safety, observe the following procedures:

• Do not ingest.

• Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-

products are dangerous to the human body if inhaled, ingested, or swallowed.

• Observe government laws and company regulations when discarding this product.This product must be discarded in accordance

with methods specified by applicable hazardous waste procedures.

Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or

systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life

support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain

life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be

reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or

system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its

safety or effectiveness.

ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic

containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. Devices need

careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers.

Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to

enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible.The mounting surface should

be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM6030HK or DM6030HK-Pt cured

in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the

die. An epoxy fillet should be visible around the total die periphery. For additional information please see the Mimix "Epoxy

Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately

0.001²thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and

provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended.The gold-tin

eutectic (80% Au 20% Sn) has a melting point of approximately 280º C (Note: Gold Germanium should be avoided).The work station

temperature should be 310º C +/- 10º C. Exposure to these extreme temperatures should be kept to minimum.The collet should be

heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during

placement.

Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond

pads.The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2%

elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias

connections. Aluminum wire should be avoided.Thermo-compression bonding is recommended though thermosonic bonding may

be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds

should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible.

RoHS Compliant Parts - All Mimix products are RoHS compliant unless specifically ordered with Tin-Lead finish.

Ordering Information

Part Number for Ordering

XX1000-BD-000V

XX1000-BD-EV1

Description

Where“V”is RoHS compliant die packed in vacuum release gel paks

XX1000 die evaluation module

Page 6 of 6

Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

XX1000-BD-000V [MIMIX]

相关型号：

XX1000-BD-EV1

XX1000-BD_0708

XX1000-QT

XX1000-QT-0G00

XX1000-QT-0G0T

XX1000-QT-EV1

XX1000-QT_07

XX1000-QT_08

XX1000-QT_10

XX1001

XX1001-BD

XX1001-BD-000V