XX1000 [MIMIX]
7.5-25.0/15.0-50.0 GHz GaAs MMIC Active Doubler; 7.5-25.0 / 15.0-50.0 GHz的砷化镓MMIC有源倍频器
| 型号： | XX1000 |
| 厂家： | 
MIMIX BROADBAND |
| 描述： | 7.5-25.0/15.0-50.0 GHz GaAs MMIC Active Doubler |
| 文件： | 总6页 (文件大小：498K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
7.5-25.0/15.0-50.0 GHz GaAs MMIC
Active Doubler
April 2006 - Rev 10-Apr-06
X1000
Features
Chip Device Layout
Excellent Broadband Mixer Driver
Single Ended Fed Doubler with Distributed
Buffer Amplifier
Excellent LO Driver for Mimix Receivers
+15 dBm Output Drive
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Mimix Broadband’s single ended fed (no external
balun required) 7.5-25.0/15.0-50.0 GHz GaAs MMIC
doubler has a +15.0 dBm output drive and is an
excellent LO doubler that can be used to drive
fundamental mixer devices. It is also well suited to
drive Mimix's XR1002 receiver device.This MMIC uses
Mimix Broadband’s 0.15 µm GaAs PHEMT device
model technology, and is based upon electron beam
lithography to ensure high repeatability and
uniformity.The chip has surface passivation to protect
and provide a rugged part with backside via holes
and gold metallization to allow either a conductive
epoxy or eutectic solder die attach process.This
device is well suited for Millimeter-wave
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Voltage (Vss)
Supply Current (Id)
Supply Current (Iss)
Gate Bias Voltage (Vg)
Input Power (RF Pin)
+6.0 VDC
-6.0 VDC
300 mA
60 mA
+0.3 VDC
+12.0 dBm
Storage Temperature (Tstg) -65 to +165 OC
Operating Temperature (Ta) -55 to MTTF Table
1
1
Channel Temperature (Tch) MTTF Table
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Point-to-Point Radio, LMDS, SATCOM and VSAT
applications.
Electrical Characteristics (AmbientTemperatureT = 25 oC)
Parameter
Input Frequency Range (fin)
Units
GHz
GHz
dB
dB
dB
Min.
7.5
15.0
-
-
-
Typ.
-
-
TBD
12.0
13
Max.
25.0
50.0
-
-
-
Output Frequency Range (fout)
Input Return Loss (S11)
Output Return Loss (S22)
Harmonic Gain (fout)
Fundamental Rejection (fin)
Saturated Output Power (Psat)
RF Input Power (RF Pin)
dBc
dBm
dBm
dBm
VDC
VDC
VDC
mA
-
-
20
+15
-
+13.0
+5.0
-0.6
0.0
220
-5.0
50
-
-
-10.0
-
-
-1.2
-1.2
-
-5.5
25
+10.0
-
Output Power at +0.0 dBm Pin (Pout)
Drain Bias Voltage (Vd1,2)
Gate Bias Voltage (Vg1)
+5.5
+0.1
+0.1
250
-2.0
60
Gate Bias Voltage (Vg2)
Supply Current (Id1,2) (Vd=5.0V,Vg1=-0.6V,Vg2=0.0V Typical)
Source Voltage (Vss)
VDC
mA
Source Current (Iss)
Page 1 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
7.5-25.0/15.0-50.0 GHz GaAs MMIC
Active Doubler
April 2006 - Rev 10-Apr-06
X1000
Doubler Measurements
Harmonic Gain and Fundamental Rejection vs Output Freq.
Pin = 0 dBm
XX1000: Po ut (2xFin) an d Po ut (F in) v s. F in (GHz)
Pin = -8 to +6 dBm
20
P out (2xF in)
, Pin (dB m)=-8
, Pin (dB m)=-6
, Pin (dB m)=-4
, Pin (dB m)=-2
, P in (dBm)= 0
, P in (dBm)= 2
, P in (dBm)= 4
, P in (dBm)= 6
, Pin (dB m)=-8
, Pin (dB m)=-6
, Pin (dB m)=-4
, Pin (dB m)=-2
, P in (dBm)= 0
, P in (dBm)= 2
, P in (dBm)= 4
, P in (dBm)= 6
15
10
5
0
-5
P out (Fi n)
-10
-15
-20
-25
8
10
12
14
16
18
20
22
Fin ( GHz)
0458_4_s amples: Pout (Fin) vs. F in (GHz)
0458_4_sa mples: Po ut (2xFin) vs . Fin (GHz)
Pin=0dBm , VD 1=5V, VG1=-0.6V, VS S= -5V, VD 2=5V ~150mA, VG 2=open
Pin=0dBm , VD 1=5V, VG1=-0.6V, VS S= -5V, VD 2=5V ~150mA, VG 2=open
20
15
10
5
20
18
16
14
12
10
8
Po ut ( 2xFi n)
P out (2 xF in)
0
-5
6
P out (1 xF in)
-10
-15
-20
4
2
0
8
10
12
14
16
18
20
22
8
10
12
14
16
18
20
22
Fin ( GHz)
Fin ( GHz)
Harmonic Products, Pin = +0 dBm (Fin = 6 - 20 GHz)
Harmonic Products, Pin = +5 dBm (Fin = 6 - 20 GHz)
20
15
10
5
20
15
10
5
2nd (RF out)
2nd (RF out)
4th
Fund. (0dBm)
2xFin (0dBm)
3xFin (0dBm)
4xFin (0dBm)
5xFin (0dBm)
6xFin (0dBm)
7xFin (0dBm)
Fund. (5dBm)
2xFin (5dBm)
3xFin (5dBm)
4xFin (5dBm)
5xFin (5dBm)
6xFin (5dBm)
7xFin (5dBm)
4th
0
0
6th
-5
-5
Fund
Fund
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
6th
5th
7th
3rd
3rd
5th
7th
5
10
15
20
25
30
35
40
45
5
10
15
20
25
30
35
40
45
Fout (GHz)
Fout (GHz)
Page 2 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
7.5-25.0/15.0-50.0 GHz GaAs MMIC
Active Doubler
April 2006 - Rev 10-Apr-06
X1000
0.295
0.695
Mechanical Drawing
(0.012)
(0.027)
1.620
(0.064)
2
3
0.791
1
(0.031)
0.196
(0.008)
4
5
7
6
0.0
0.0
0.295 0.494
(0.012)(0.019)
0.894
1.560
(0.035)
(0.061)
(Note: Engineering designator is 40DBL0458)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All Bond Pads are 0.100 x 0.100 (0.004 x 0.004).
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 1.566 mg.
Bond Pad #1 (RF In)
Bond Pad #2 (Vd1)
Bond Pad #3 (Vd2)
Bond Pad #4 (RF Out)
Bond Pad #5 (Vg2)
Bond Pad #6 (Vss)
Bond Pad #7 (Vg1)
Vd1
Bias Arrangement
Vd2
2
3
Bypass Capacitors - See App Note [2]
1
RF In
4
RF Out
7
6
5
Vg2
Vg1
Vss
Page 3 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
7.5-25.0/15.0-50.0 GHz GaAs MMIC
Active Doubler
April 2006 - Rev 10-Apr-06
X1000
App Note [1] Biasing - It is recommended to separately bias each doubler stage Vd1 through Vd2 at Vd(1,2)=5.0V with Id1=80mA
and Id2=140mA and Vss=-5.0V with Iss=50mA. XX1000 provides good performance at reduced bias with Vss=-2.0V and Iss=25mA.
Maximum output power is achieved with Vss=-5.0V and Iss=50mA. Separate biasing is recommended if the doubler is to be used at
high levels of saturation, where gate rectification will alter the effective gate control voltage. It is also recommended to use active
biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on
the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power
operational amplifier, with a low value resistor in series with the drain supply used to sense the current.The gate of the pHEMT is
controlled to maintain correct drain current and thus drain voltage. The typical gate voltages needed to do this are Vg1=-0.6V and
Vg2=0.0V.Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied
voltage to ensure negative gate bias is available before applying the positive drain supply.
App Note [2] Bias Arrangement -
For Individual Stage Bias (Recommended for doubler applications) -- Each DC pad (Vd1, 2,Vss and Vg1, 2) needs to have DC bypass
capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
MTTFTables (TBD)
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Backplate
Channel
Rth
MTTF Hours
FITs
Temperature
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
deg Celsius
deg Celsius
deg Celsius
C/W
C/W
C/W
E+
E+
E+
E+
E+
E+
Bias Conditions: Vd1=Vd2=4.0V, Id1=40 mA, Id2=140 mA,Vss=-5.0V, Iss=50mA
Page 4 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
7.5-25.0/15.0-50.0 GHz GaAs MMIC
Active Doubler
April 2006 - Rev 10-Apr-06
X1000
Device Schematic
Typical Application
XR1002
IF Out
2 GHz
BPF
IR Mixer
RF IN
21.5-23.5 GHz
AGC Control
Atten=0-12dB
LO(+3.0dBm)
XX1000
9.75-11.75 GHz
11.75-12.75 GHz
X2
19.5-21.5 GHz (USB Operation)
23.5-25.5 GHz (LSB Operation)
Mimix Broadband MMIC-based 18.0-34.0 GHz Doubler/Receiver Block Diagram
(Changing LO and IF frequencies as required allows design to operate as high as 34 GHz)
Page 5 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
7.5-25.0/15.0-50.0 GHz GaAs MMIC
Active Doubler
April 2006 - Rev 10-Apr-06
X1000
Handling and Assembly Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the
human body and the environment. For safety, observe the following procedures:
Do not ingest.
Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical
processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this product.This product must be
discarded in accordance with methods specified by applicable hazardous waste procedures.
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support
devices or systems without the express written approval of the President and General Counsel of Mimix
Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for
surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in a
significant injury to the user. (2) A critical component is any component of a life support device or system whose
failure to perform can be reasonably expected to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied
in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-
static workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care,
sharp tweezers.
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the
backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as
possible.The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are
Ablestick 84-1LMI or 84-1LMIT cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy
sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total
2
die periphery. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.001
thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated
collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere
is recommended.The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold
+
Germanium should be avoided).The work station temperature should be 310 C 10 C. Exposure to these
-
extreme temperatures should be kept to minimum.The collet should be heated, and the die pre-heated to avoid
excessive thermal shock. Avoidance of air bridges and force impact are critical during placement.
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to
the die's gold bond pads.The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x
0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm
(0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be
avoided.Thermo-compression bonding is recommended though thermosonic bonding may be used providing
the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters.
Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short
as possible.
Page 6 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
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