PMA3-63GLN-D [MINI]

Monolithic Amplifier Die;
PMA3-63GLN-D
型号: PMA3-63GLN-D
厂家: MINI-CIRCUITS    MINI-CIRCUITS
描述:

Monolithic Amplifier Die

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Low Noise, High Gain  
PMA3-63GLN-D+  
Monolithic Amplifier Die  
50  
1.8 to 6.0 GHz  
The Big Deal  
• Flat gain over wideband  
• Low noise figure, 0.6 dB typ.  
• High Gain, up to 29.7 dB typ.  
Product Overview  
The PMA3-63GLN-D+ is a PHEMT based wideband, low noise MMIC amplifier die with a unique combina-  
tion of low noise, high gain and IP3 over wideband making it ideal for sensitive, high-dynamic-range S-band  
receiver applications. This design operates on a single 5V supply, is well matched for 50.  
Key Features  
Feature  
Advantages  
Low noise, 0.6 dB at 2.5 GHz  
Enables lower system noise figure performance.  
Wide bandwidth with flat gain  
Enables a single amplifier to be used in many wideband applications including defense,  
instrumentation and more.  
1.6 dB over 2.5 to 5 GHz  
Enables signal amplification without the need for multiple gain stage. Thus minimize effect of  
subsequent stages on noise figure.  
High Gain, 29.7 dB at 2.5 GHz  
High IP3  
• +28.6 dBm at 2.5 GHz  
• +14.8 dBm at 2.5 GHz  
Combination of low noise and high IP3 makes this MMIC amplifier ideal for use in low noise  
receiver front end (RFE) as it gives the user advantages of sensitivity and two-tone IM perfor-  
mance at both ends of the dynamic range.  
Unpackaged die  
Enables user to integrate it directly into hybrids.  
®
Mini-Circuits  
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com  
Page 1 of  
Low Noise, High Gain  
PMA3-63GLN-D+  
Monolithic Amplifier Die  
50Ω  
1.8 to 6.0 GHz  
Product Features  
• Low Noise figure, 0.6 dB typ.  
• High IP3, 28.6 dBm typ.  
• Excellent Gain flatness, 1.6 dB over 2.5 to 5 GHz  
• High Gain, 29.7 dB typ.  
Typical Applications  
• 5G  
• WiFi  
+RoHS Compliant  
ꢀhe ꢁꢂuffiꢃ identifies RoHꢂ ꢄompliance. ꢂee our web site  
for RoHꢂ ꢄompliance methodologies and qualifications  
• WLAN  
• UMTS  
Ordering Information: Refer to Last Page  
• LTE  
• WiMAX  
• S-band Radar  
• C-band Satcom  
General Description  
The PMA3-63GLN-D+ is a PHEMT based wideband, low noise MMIC amplifier die with a unique combination  
of low noise, high gain & IP3 over wideband making it ideal for sensitive, high-dynamic-range S-band  
receiver applications. This design operates on a single 5V supply, is well matched for 50.  
Simplified Schematic and Pad description  
Bonding Pad Position  
RF-OUT  
RF-IN  
and DC-IN  
GND  
Pad#  
Function  
RF-IN  
1
2
RF-OUT and DC-IN  
GND  
Bottom of Die  
Dimensions in µm, Typical  
L1  
L2  
L3  
H1  
H2  
H3  
81.5  
1074  
1150  
187  
315.5  
750  
Bond pad size  
65.0 x 140.0  
Thickness  
100  
Die size  
1150.0 X 750.0  
REV. OR  
M171586  
®
PMA3-63GLN-D+  
WP/RS/CP  
190222  
Mini-Circuits  
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com  
Page 2 of  
PMA3-63GLN-D+  
Monolithic PHEMT MMIC Amplifier Die  
Electrical Specifications1 at 25°C and 5V, unless noted otherwise  
Parameter  
Condition (GHz)  
VDD=5.0V  
Typ.  
Units  
Min.  
Max.  
Frequency Range  
Noise Figure  
GHz  
dB  
1.8  
6.0  
1.8  
0.8  
2.5  
3.5  
5
0.6  
0.7  
0.9  
6
1.1  
Gain  
dB  
dB  
1.8  
2.5  
3.5  
5
31.7  
29.7  
27.9  
26.5  
24.9  
7
6
Input Return Loss  
Output Return Loss  
Output Power at 1dB Compression  
Output IP33  
1.8  
2.5  
3.5  
5
10  
11  
10  
6
12  
dB  
1.8  
2.5  
3.5  
5
10  
10  
10  
16  
6
22  
dBm  
dBm  
1.8  
2.5  
3.5  
5
15.2  
14.8  
14.1  
11.5  
10.7  
28.8  
28.6  
26.6  
23.4  
22.3  
5.0  
6
1.8  
2.5  
3.5  
5
6
Device Operating Voltage (VDD  
)
V
Device Operating Current (IDD  
)
69  
80  
mA  
Device Current Variation vs. Temperature2  
-26.9  
0.006  
57.3  
µA/°C  
mA/mV  
°C/W  
Device Current Variation vs. Voltage  
Thermal Resistance, junction-to-ground lead  
1. Measured on Mini-Circuits Characterization test board with tested board loss being deducted. Die is packaged in 3x3 mm, 12-lead MCL package and soldered  
on TB-PMA3-63GLN+. See Characterization Test Circuit (Fig. 1)  
2. (Current at 85°C - Current at -45°C)/130  
3. Tested at Pout=0 dBm/tone  
Absolute Maximum Ratings4  
Parameter  
Ratings  
-40°C to 85°C  
150°C  
Operating Temperature (ground lead)  
Junction Temperature  
Total Power Dissipation  
1.0W  
+29 dBm (5 minutes max.)  
+10 dBm (continuous)  
Input Power (CW), Vd=5V  
DC Voltage  
8.5V  
4. Permanent damage may occur if any of these limits are exceeded.  
Electrical maximum ratings are not intended for continuous normal operation.  
®
Mini-Circuits  
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com  
Page 3 of  
Monolithic PHEMT MMIC Amplifier Die  
PMA3-63GLN-D+  
Characterization Test Circuit  
Component Size  
Value  
22pF  
22pF  
100pF  
22uF  
10nH  
P/N  
Manufacturer  
Murata  
C1  
C2  
C3  
C4  
L1  
0402  
0402  
0402  
1206  
0402  
GRM1555C1H220JA01  
GRM1555C1H220JA01  
GRM1555C1H101JA01  
GRM31CR61H106KA12  
LQG15HSIONJD2  
Murata  
Murata  
Murata  
Murata  
Fig 1. Application and Characterization Circuit  
Note: This block diagram is used for characterization. (Die is packaged in 3x3mm, 12-lead MCLP package and soldered on Mini-Circuits  
Characterization test board TB-PMA3-63GLN+) Gain, Return loss, Output power at 1dB compression (P1 dB), output IP3 (OIP3) and noise  
figure measured using Agilent’s N5242A PNA-X microwave network analyzer.  
Conditions:  
1. Gain and Return loss: Pin= -35dBm  
2. Output IP3 (OIP3): Two tones, spaced 1 MHz apart, 0 dBm/tone at output.  
®
Mini-Circuits  
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com  
Page 4 of  
PMA3-63GLN-D+  
Monolithic PHEMT MMIC Amplifier Die  
Assembly Diagram  
Assembly and Handling Procedure  
1. Storage  
Dice should be stored in a dry nitrogen purged desiccators or equivalent.  
2. ESD  
MMIC PHEMT amplifier dice are susceptible to electrostatic and mechanical damage. Die are supplied in  
antistatic protected material, which should be opened in clean room conditions at an appropriately grounded anti-static worksta  
tion. Devices need careful handling using correctly designed collets, vacuum pickup tips or sharp antistatic tweezers to deter  
ESD damage to dice.  
3. Die Attach  
The die mounting surface must be clean and flat. Using conductive silver filled epoxy, recommended epoxies are DieMat  
DM6030HK-PT/H579 or Ablestik 84-1LMISR4. Apply sufficient epoxy to meet required epoxy bond line thickness, epoxy fillet  
height and epoxy coverage around total die periphery. Parts shall be cured in a nitrogen filled atmosphere per manufacturer’s  
cure condition. It is recommended to use antistatic die pick up tools only.  
4. Wire Bonding  
Bond pad openings in the surface passivation above the bond pads are provided to allow wire bonding to the dice gold bond  
pads. Thermosonic bonding is used with minimized ultrasonic content. Bond force, time, ultrasonic power and temperature are  
all critical parameters. Suggested wire is pure gold, 1 mil diameter. Bonds must be made from the bond pads on the die to  
the package or substrate. All bond wires should be kept as short as low as reasonable to minimize performance degradation due  
to undesirable series inductance.  
®
Mini-Circuits  
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com  
Page 5 of  
Monolithic PHEMT MMIC Amplifier Die  
PMA3-63GLN-D+  
Additional Detailed Technical Information  
additional information is available on our dash board.  
Data Table  
Performance Data  
Case Style  
Swept Graphs  
S-Parameter (S2P Files) Data Set with and without port extension(.zip file)  
Die  
Quantity, Package  
Model No.  
Small, Gel - Pak: 5,10,50,100 KGD* PMA3-63GLN-DG+  
Medium, Partial wafer: KGD*<1575 PMA3-63GLN-DP+  
PMA3-63GLN-DF+  
Available upon request contact sales representative  
Die Ordering and packaging  
information  
Large, Full Wafer  
Refer to AN-60-067  
Environmental Ratings  
ENV80  
*Known Good Dice (“KGD”) means that the dice in question have been subjected to Mini-Circuits DC test performance criteria and measurement  
instructions and that the parametric data of such dice fall within a predefined range. While DC testing is not definitive, it does help to provide a higher  
degree of confidence that dice are capable of meeting typical RF electrical parameters specified by Mini-Circuits.  
ESD Rating**  
Human Body Model (HBM): Class 1C (pass <2000V) in accordance with ANSI/ESD STM 5.1 - 2001  
** Tested in industry standard MCLP 3 x 3 mm, 12-lead package.  
Additional Notes  
A. Performance and quality attributes and conditions not expressly stated in this specification document are intended  
to be excluded and do not form a part of this specification document.  
B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s  
applicable established test performance criteria and measurement instructions.  
C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms  
and conditions (collectively, Standard Terms”); Purchasers of this part are entitled to the rights and benefits  
contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder,  
please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp  
D. Mini-Circuits does not warrant the accuracy or completeness of the information, text, graphics and other items  
contained within this document and same are provided as an accommodation and on an “As is” basis, with all faults.  
E. Purchasers of this part are solely responsible for proper storing, handling, assembly and processing of Known  
Good Dice (including, without limitation, proper ESD preventative measures, die preparation, die attach, wire bond  
ing and related assembly and test activities), and Mini-Circuits assumes no responsibility therefor or for environmental  
effects on Known Good Dice.  
F. Mini-Circuits and the Mini-Circuits logo are registered trademarks of Scientific Components Corporation d/b/a Mini-  
Circuits. All other third-party trademarks are the property of their respective owners. A reference to any third-party  
trademark does not constitute or imply any endorsement, affiliation, sponsorship, or recommendation by any such  
third-party of Mini-Circuits or its products.  
®
Mini-Circuits  
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com  
Page 6 of  

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