M63820FP [MITSUBISHI]
8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE; 8 -UNIT 500毫安达林顿晶体管阵列钳位二极管
| 型号： | M63820FP |
| 厂家： | 
Mitsubishi Group |
| 描述： | 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE |
| 文件： | 总2页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63820FP/KP
8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
DESCRIPTION
PIN CONFIGURATION
The M63820FP/KP 8-channel sinkdriver, consists of 16 NPN
transistors connected to from eight high current gain driver
pairs.
NC
IN1
IN2
IN3
IN4
IN5
IN6
IN7
IN8
1
2
3
4
5
6
7
8
9
20
19
18
17
16
15
14
13
12
11
NC
O1
O2
O3
O4
O5
O6
O7
O8
FEATURES
G
High breakdown voltage (BVCEO ≥ 50V)
INPUT
OUTPUT
G
High-current driving (IC(max) = 500mA)
G
With clamping diodes
G
3V micro computer series compatible input
G
Wide operating temperature range (Ta = –40 to +85°C)
GND 10
COM COMMON
NC : No connection
APPLICATION
20P2N-A(FP)
Package type 20P2E-A(KP)
Output for 3 voltage microcomputer series and interface with
high voltage system. Relay and small printer driver, LED, or
incandescent display digit driver.
CIRCUIT DIAGRAM
FUNCTION
COM
The M63820FP/KP is transistor-array of high active level
eight units type which can do direct drive of 3 voltage micro-
computer series. A resistor of 1.05kΩ is connected between
the input pin. A clamp diode for inductive load transient sup-
pression is connected for the output pin (collector) and COM
pin (pin11). All emitters of the output transistor are con-
nected to GND (pin10). The outputs are capable of driving
500mA and are rated for operation with output voltage up to
50V.
OUTPUT
1.05K
INPUT
7.2K
3K
GND
The eight circuits share the COM and GND
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit : Ω
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol
VCEO
IC
Parameter
Collector-emitter voltage
Collector current
Conditions
Ratings
–0.5 ~ +50
500
Unit
V
Output, H
Current per circuit output, L
mA
V
–0.5 ~ +10
500
VI
Input voltage
IF
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
mA
V
50
VR
1.10(GP)/0.68(KP)
–40 ~ +85
–55 ~ +125
Pd
Ta = 25°C, when mounted on board
W
Topr
Tstg
Operating temperature
Storage temperature
°C
°C
Sep. 2001
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63820FP/KP
8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)
Limits
typ
Symbol
VO
Parameter
Unit
V
min
0
max
50
Output voltage
—
Duty Cycle
FP : no more than 4%
KP : no more than 2%
0
0
—
—
400
200
Collector current (Current per
1 circuit when 8 circuits are
coming on simultaneously)
IC
mA
Duty Cycle
FP : no more than 15%
KP : no more than 6%
VIH
VIL
IC ≤ 400mA
2.7
0
—
—
10
“H” input voltage
“L” input voltage
V
V
0.6
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Limits
typ
Symbol
Parameter
Test conditions
Unit
V
min
50
max
—
V
(BR) CEO
—
Collector-emitter breakdown voltage ICEO = 100µA
II = 500µA, IC = 350mA
—
1.2
1.0
0.9
1.5
1.4
—
1.6
1.3
1.1
2.4
2.0
100
—
VCE(sat)
II = 350µA, IC = 200mA
II = 250µA, IC = 100mA
VI = 3V
—
V
Collector-emitter saturation voltage
—
II
Input current
—
mA
V
VF
IR
—
Clamping diode forward volltage
Clamping diode reverse current
DC amplification factor
IF = 350mA
VR = 50V
—
µA
—
hFE
VCE = 2V, IC = 350mA
1000
2500
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol Parameter Test conditions
Limits
typ
Unit
min
—
max
—
ton
toff
Turn-on time
Turn-off time
15
ns
ns
CL = 15pF (note 1)
—
350
—
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
INPUT
VO
50%
50%
Measured device
INPUT
R
C
L
L
OPEN
OUTPUT
PG
OUTPUT
50%
ton
50%
50Ω
toff
(1)Pulse generator (PG) characteristics : PRR=1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω
V
I
= 0 ~ 3V
(2)Input-output conditions : R
(3)Electrostatic capacity C includes floating capacitance
at connections and input capacitance at probes
L
= 25Ω, Vo = 10V
L
Sep. 2001
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