M68731N [MITSUBISHI]
SILICON MOS FET POWER AMPLIFIER, 142-163MHz, 7W, FM PORTABLE RADIO; 硅MOS场效应管功率放大器， 142-163MHz ， 7W ， FM PORTABLE RADIO
| 型号： | M68731N |
| 厂家： | 
Mitsubishi Group |
| 描述： | SILICON MOS FET POWER AMPLIFIER, 142-163MHz, 7W, FM PORTABLE RADIO |
| 文件： | 总2页 (文件大小：25K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI RF POWER MODULE
M68731N
SILICON MOS FET POWER AMPLIFIER, 142-163MHz, 7W, FM PORTABLE RADIO
Dimensions in mm
OUTLINE DRAWING
BLOCK DIAGRAM
30±0.2
2
3
26.6±0.2
21.2±0.2
2-R1.5±0.1
1
4
5
5
1
2
3
4
0.45
6±1
PIN:
13.7±1
18.8±1
1
2
3
4
5
Pin : RF INPUT
VGG : GATE BIAS SUPPLY
VDD : DRAIN BIAS SUPPLY
PO : RF OUTPUT
23.9±1
GND: FIN
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Symbol
VDD
Parameter
Conditions
Ratings
Unit
V
Supply voltage
Gate bias voltage
Input power
VGG£3.5V, ZG=ZL=50W
9.2
4
VGG
V
Pin
f=142-163MHz, ZG=ZL=50W
f=142-163MHz, ZG=ZL=50W
f=142-163MHz, ZG=ZL=50W
70
10
mW
W
PO
Output power
TC (OP)
Operation case temperature
Strage temperature
-30 to +100
-40 to +110
°C
°C
Tstg
Note. Above parameters are guarateed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C, ZG=ZL=50Wunless otherwise noted)
Symbol Parameter Test conditions
Limits
Unit
Min
Max
163
f
Frequency range
Output power
Total efficiency
142
7
MHz
W
PO
hT
VDD=7.2V,
VGG=3.5V,
Pin=50W
45
%
2nd. harmonic
Input VSWR
2fO
r in
-20
4
dBc
-
ZG=50W, VDD=4-9.2V,
Load VSWR<4:1
No parasitic oscillation
-
-
-
-
Stability
No degradation or
destroy
VDD=9.2V, Pin=50mW,
PO=7W (VGG adjust), ZL=20:1
Load VSWR tolerance
Note. Above parameters, ratings, limits and test conditions are subject to change.
Nov. ´97
MITSUBISHI RF POWER MODULE
M68731N
SILICON MOS FET POWER AMPLIFIER, 142-163MHz, 7W, FM PORTABLE RADIO
TYPICAL PERFORMANCE DATA
OUTPUT POWER, TOTAL EFFICIENCY
OUTPUT POWER, TOTAL EFFICIENCY
VS. GATE VOLTAGE
VS. FREQUENCY
10
9
8
7
6
5
4
3
2
1
0
100
90
80
70
60
50
40
30
20
10
0
10.0
100
10
1
hT
PO
PO
hT
1.0
0.1
VDD=7.2V
VGG=3.5V
Pin=50mW
f=142MHz
VDD=7.2V
Pin=50mW
135 140 145 150 155 160 165 170 175
0.5
1.0
1.5
2.0
2.5
3.0
3.5
FREQUENCY f (MHz)
GATE VOLTAGE VGG (V)
OUTPUT POWER, TOTAL EFFICIENCY
VS. GATE VOLTAGE
OUTPUT POWER, TOTAL EFFICIENCY
VS. SUPPLY VOLTAGE
10.0
100
16
14
12
10
8
80
70
60
50
40
30
20
10
0
hT
hT
PO
10
PO
1.0
0.1
6
4
f=142MHz
VGG=3.5V
Pin=50mW
f=163MHz
VDD=7.2V
Pin=50mW
2
1
3.5
0
0.5
1.0
1.5
2.0
2.5
3.0
4
5
6
7
8
9
GATE VOLTAGE VGG (V)
SUPPLY VOLTAGE VDD (V)
OUTPUT POWER, TOTAL EFFICIENCY
VS. SUPPLY VOLTAGE
16
14
12
10
8
80
70
60
50
40
30
20
10
0
hT
PO
6
4
f=163MHz
VGG=3.5V
Pin=50mW
2
0
4
5
6
7
8
9
SUPPLY VOLTAGE VDD (V)
Nov. ´97
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