M6MGB166S2BWG [MITSUBISHI]

16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY; 16777216位( 1,048,576 -word 16位) CMOS 3.3V -ONLY闪存
M6MGB166S2BWG
型号: M6MGB166S2BWG
厂家: MITSUBISHI ELECTRIC SEMICONDUCTOR    MITSUBISHI ELECTRIC SEMICONDUCTOR
描述:

16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
16777216位( 1,048,576 -word 16位) CMOS 3.3V -ONLY闪存

闪存 存储 内存集成电路 静态存储器
文件: 总30页 (文件大小:254K)
下载:  下载PDF数据表文档文件

M6MGB166S2BWG-85

Memory Circuit, 1MX16, CMOS, PBGA72, 0.80 MM PITCH, CSP-72

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0 MITSUBISHI

M6MGB166S2BWG-90

Memory Circuit, 1MX16, CMOS, PBGA72, 0.80 MM PITCH, CSP-72

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0 MITSUBISHI

M6MGB166S4BWG

CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP

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33 MITSUBISHI

M6MGB166S4BWG

CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP

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21 MITSUBISHI

M6MGB166S4BWG

16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY

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39 MITSUBISHI

M6MGB166S4BWG-85

Memory Circuit, 1MX16, CMOS, PBGA72, 0.80 MM PITCH, CSP-72

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0 MITSUBISHI

M6MGB166S4BWG-90

Memory Circuit, 1MX16, CMOS, PBGA72, 0.80 MM PITCH, CSP-72

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0 MITSUBISHI

M6MGB331S4BKT

33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B

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17 RENESAS

M6MGB331S8AKT

33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI

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11 RENESAS

M6MGB331S8BKT

33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI

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12 RENESAS

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