M6MGT160S4BVP [MITSUBISHI]

16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY; 16777216位( 1,048,576 -word 16位/ 2097152 - WORD 8 - BIT) CMOS 3.3V -ONLY闪存
M6MGT160S4BVP
型号: M6MGT160S4BVP
厂家: MITSUBISHI ELECTRIC SEMICONDUCTOR    MITSUBISHI ELECTRIC SEMICONDUCTOR
描述:

16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
16777216位( 1,048,576 -word 16位/ 2097152 - WORD 8 - BIT) CMOS 3.3V -ONLY闪存

闪存
文件: 总30页 (文件大小:258K)
下载:  下载PDF数据表文档文件

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16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY

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25 MITSUBISHI

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21 MITSUBISHI

M6MGT162S4BVP

16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY

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38 MITSUBISHI

M6MGT166S2BWG

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21 MITSUBISHI

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22 MITSUBISHI

M6MGT166S2BWG-90

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0 MITSUBISHI

M6MGT166S4BWG

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35 MITSUBISHI

M6MGT166S4BWG

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37 MITSUBISHI

M6MGT166S4BWG

CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP

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24 MITSUBISHI

M6MGT166S4BWG-85

暂无描述

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33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B

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25 RENESAS

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9 RENESAS

M6MGT331S8BKT

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M6MGT33BS8AWG-P

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