MG400V1US51A [MITSUBISHI]
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS; 大功率开关应用电机控制应用
| 型号： | MG400V1US51A |
| 厂家： | 
Mitsubishi Group |
| 描述： | HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
| 文件： | 总7页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI IGBT MODULES
MG400V1US51A
HIGH POWER SWITCHING APPLICATIONS
MOTOR CONTROL APPLICATIONS
MG400V1US51A
FEATURE
¡The electrodes are isolated from case.
¡Enhancement-mode
¡Integrates fault-signal output circuit in package.
(Short-Circuit and Over-Current)
¡UL Recognized Yellow Card No.E80276
File No.E80271
APPLICATION
General purpose inverters, servo drives and motor controls
OUTLINE DRAWING & EQUIVALENT CIRCUIT
Dimensions in mm
4-φ6.5 0.3
118 0.8
C
C
104 0.6
G
JAPAN
SEN
E
C
E
C
E
4-M6
E
E
3-M4
Equivalent Circuit
26 0.6
44 0.6
10 0.6
8.5 0.6
116 0.8
66 0.8
Weight: 420g
Dec.2005
MITSUBISHI IGBT MODULES
MG400V1US51A
HIGH POWER SWITCHING APPLICATIONS
MOTOR CONTROL APPLICATIONS
MAXIMUM RATINGS (Ta = 25°C)
Symbol
VCES
VGES
VSES
IC
Parameter
Collector-emitter voltage
Gate-emitter voltage
Sense-emitter voltage
Conditions
Ratings
1700
±20
Unit
V
V
40
400
800
400
V
Collector
current
Forward
current
DC
1ms
DC
A
A
ICP
IF
IFM
800
1ms
PC
Collector power dissipation
Junction temperature
Storage temperature range
Isolation voltage
TC = 25°C
2750
150
–40 ~ 125
4000 (AC 1 minute)
W
°C
°C
V
Tj
Tstg
Vlsol
—
Screw
torque
2/3
3
Terminal (M4/M6)
Mounting
N • m
—
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Limits
Symbol
Parameter
Test conditions
Unit
Min.
—
—
Typ.
—
Max.
Gate leakage current
VGE = ±20V, VCE = 0
±500
4.0
8.0
4.5
—
nA
mA
V
IGES
ICES
VGE(off)
VCE(sat)
Cies
td(on)
tr
Collector cut-off current
Gate-emitter cut-off voltage
VCE = 1700V, VGE = 0
IC = 400mA, VCE = 5V
—
4.0
—
—
Collector-emitter saturation voltage IC = 400A, Tj = 25°C
Input capacitance VCE = 10V, VGE = 0, f = 1MHz
Turn-on delay time
3.2
51200
0.14
0.07
0.21
0.49
0.28
0.77
4.0
0.3
—
V
—
—
pF
—
Inductive load
VCC = 900V
IC = 400A
Rise time
Switching Turn-on time
—
—
ton
—
—
µs
td(off)
tf
time
Turn-off delay time
—
—
VGE = ±15V
RG = 2Ω
Fall time
Turn-off time
1.0
—
5.5
0.6
200
—
13.2
0.045
0.125
—
toff
(Note 1)
(Note 1)
—
—
VF
Forward voltage
IF = 400A, VGE = 0
V
µs
nA
A
trr
Reverse recovery time
IF = 400A, VGE = –15V, di/dt = 1500A/µs
VSEN – E = 40V, VCE = 0, VGE = 0
VGE = 15V, VSE = 14.8V
VGE = 15V, IC = 2400A
Transistor stage
—
ISES
Sense leakage current
—
I
C(SEN-START)
Sense
(Note 2)
(Note 2)
Sense start current
Sense voltage
1050
—
—
—
VSEN
—
—
V
Rth(j-c)
Thermal resistance
°C/W
Diode stage
—
—
Dec.2005
MITSUBISHI IGBT MODULES
MG400V1US51A
HIGH POWER SWITCHING APPLICATIONS
MOTOR CONTROL APPLICATIONS
Note 1: Switching time and reverse recovery time test circuit and timing chart
Switching time test circuit
Timing chart
90%
V
GE
10%
RG
IF
–VGE
90% Irr
20% Irr
VCC
I
rr
L
IC
90%
I
C
trr
RG
10%
10%
td(on)
t
d(off)
tf
Note 2: Sense start current and sense voltage test circuit
Test circuit
Timing chart
*Measurement in the complete charge period.
Complete charge period
VGE
Inductance
IC
2400A
IC(SEN-START)
15V
330Ω
VSE
IC
VSE
14.8V
VSEN
15V
Dec.2005
MITSUBISHI IGBT MODULES
MG400V1US51A
HIGH POWER SWITCHING APPLICATIONS
MOTOR CONTROL APPLICATIONS
<VCE(sat) Rank>
<VF Rank>
VF
VCE(sat)
Rank symbol
Rank symbol
MIN.
MAX.
MIN.
MAX.
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
A
B
C
D
E
4.5
4.0
3.5
3.0
2.5
5.5
4.7
4.2
3.7
3.2
<Mark position>
V
CE(sat), V
F
Rank
JAPAN
C
E
C
E
Serial No.
MG400V1US51
T52AA1
Lot No.
Dec.2005
MITSUBISHI IGBT MODULES
MG400V1US51A
HIGH POWER SWITCHING APPLICATIONS
MOTOR CONTROL APPLICATIONS
PERFORMANCE CURVES
-
-
V
IC
V
CE
I
C
CE
800
800
600
400
200
0
15
12
20
12
15
10
10
20
600
9
400
200
0
9
V
GE = 8V
V
GE = 8V
Common emitter
= 25°C
Common emitter
= 125°C
T
j
T
j
0
2
4
6
8
10
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER VOLTAGE VCE (V)
-
-
V
V
CE
V
GE
V
CE
GE
16
12
8
16
12
8
I
C
= 800A
400
IC
= 800A
400
4
4
200
16
200
Common emitter
Common emitter
T
j
= 125°C
T
j
= 25°C
0
0
0
4
8
12
16
20
0
4
8
12
20
GATE-EMITTER VOLTAGE VGE (V)
GATE-EMITTER VOLTAGE VGE (V)
-
-
V
I
C
V
GE
IF
F
800
640
480
320
160
0
800
600
400
200
0
Common emitter
CE = 5V
25
25
T
j
= 125°C
V
Tj = 125°C
Common cathode
V
GE = 0V
0
4
8
12
16
20
0
2
4
6
8
10
GATE-EMITTER VOLTAGE VGE (V)
FORWARD VOLTAGE VF (V)
Dec.2005
MITSUBISHI IGBT MODULES
MG400V1US51A
HIGH POWER SWITCHING APPLICATIONS
MOTOR CONTROL APPLICATIONS
-
-
IC
SW time
RG
SW time
104
7
103
7
t
off
5
5
3
2
tf
t
d(off)
t
on
3
2
t
off
103
7
102
7
5
5
td(off)
td(on)
t
on
3
2
t
d(on)
t
r
102
7
3
2
5
t
r
Common emitter
CC = 900V
= 400A
GE
tf
Common emitter
VCC = 900V
3
101
7
5
2
V
101
7
I
C
RG = 2Ω
V
=
T
T
15V
V
GE
=
15V
5
3
2
3
j
= 25°C
= 125°C
Tj
= 25°C
= 125°C
2
j
Tj
100
100
0
0
0
4
8
12
16
0
0
0
100
200
300
400
GATE RESISTANCE R
G
(Ω)
COLLECTOR CURRENT IC (A)
-
-
IC
SW loss
RG
SW loss
103
7
102
Eoff
7
5
5
Eon
3
2
3
2
102
7
5
Eon
101
3
2
Eoff
7
5
Common emitter
Common emitter
VCC = 900V
101
7
5
VCC = 900V
I
C
= 400A
RG = 2Ω
3
2
VGE
=
15V
= 25°C
= 125°C
V
GE
=
15V
3
2
Tj
T
j
= 25°C
= 125°C
Tj
Tj
100
100
4
8
12
16
100
200
300
400
GATE RESISTANCE R
G
(Ω)
COLLECTOR CURRENT IC (A)
-
-
IF
Irr, trr
RG
I
rr, trr
103
103
7
5
7
5
Irr
Irr
3
2
3
2
102
102
trr
7
5
7
5
trr
Common emitter
Common emitter
VCC = 900V
VCC = 900V
I
C
= 400A
RG = 2Ω
3
2
3
2
VGE
=
15V
= 25°C
= 125°C
V
GE
=
15V
Tj
T
j
= 25°C
= 125°C
Tj
Tj
101
101
4
8
12
16
100
200
300
400
GATE RESISTANCE R
G
(Ω)
FORWARD CURRENT IF (A)
Dec.2005
MITSUBISHI IGBT MODULES
MG400V1US51A
HIGH POWER SWITCHING APPLICATIONS
MOTOR CONTROL APPLICATIONS
-
-
IF
E
dsw
R
G
E
dsw
102
102
7
5
7
5
3
2
3
2
101
101
7
5
7
5
Common emitter
Common emitter
VCC = 900V
V
CC = 900V
= 400A
I
C
RG = 2Ω
3
2
3
2
V
GE
=
15V
V
GE
=
15V
T
T
j
j
= 25°C
= 125°C
T
T
j
j
= 25°C
= 125°C
100
100
0
4
8
12
16
0
100
200
300
400
GATE RESISTANCE R
G
(Ω)
FORWARD CURRENT IF (A)
-
-
V
V
CE, VGE
Q
G
C
CE
1000
800
600
400
200
0
20
105
7
C
ies
5
3
2
16
12
8
V
CE =0V
104
7
5
900
C
oes
3
2
300
103
7
5
600
C
res
4
Common emitter
= 2.25Ω
= 25°C
V
GE = 0V
f = 1MHz
TC = 25°C
3
2
R
L
T
j
0
102
0
500
1000 1500 2000 2500
100
101
102
5 7
2
3
5
7
2
3
CHARGE Q
G
(nC)
COLLECTOR-EMITTER VOLTAGE VCE (V)
-
th tW
R
100
7
5
T
C
= 25°C
3
2
DIODE STAGE
10-1
7
5
3
2
TRANSISTOR STAGE
10-2
7
5
3
2
10-3
-2
-1
0
2 3 57
10
1
10-3
10
10
10
2 3 57
2 3 57
2 3 57
PULSE WIDTH t
W
(s)
Dec.2005
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