MGF0918A_04 [MITSUBISHI]

L & S BAND GaAs FET; L＆ S波段砷化镓场效应管


型号：	MGF0918A_04
厂家：	Mitsubishi Group
描述：	L & S BAND GaAs FET L＆ S波段砷化镓场效应管
文件：	总4页 (文件大小：47K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MITSUBISHI SEMICONDUCTOR<GaAs FET>

MGF0918A

L & S BAND GaAs FET [ SMD non – matched ]

DESCRIPTION

The MGF0918A GaAs FET with an N-channel schottky

Gate, is designed for use UHF band amplifiers.

FEATURES

· High output power

Po=27dBm(TYP.) @f=1.9GHz,Pin=8dBm

· High power gain

Gp=20dB(TYP.) @f=1.9GHz

· High power added efficiency

hadd=45%(TYP.) @f=1.9GHz,Pin=8dBm

· Hermetic Package

APPLICATION

· For UHF Band power amplifiers

Fig.1

QUALITY

· GG

RECOMMENDED BIAS CONDITIONS

· Vds=10V · Ids=150mA · Rg=1kW

Delivery

-01:Tape & Reel(1K), -03:Trai(50pcs)

Absolute maximum ratings (Ta=25°C)

Symbol

VGSO

Parameter

Ratings

Unit

Gate to source

breakdown voltage

-15

VGDO Gate to drain breakdown voltage

Drain current

400

IGR

IGF

Reverse gate current

Forward gate current

Total power dissipation

Cannel temperature

Storage temperature

-1.2

5.0

Tch

Tstg

175

°C

-65 to +175

Electrical characteristics

(Ta=25°C)

Symbol

Parameter

Test conditions

Limits

Typ.

300

Unit

Min.

Max.

Saturated drain current

Gate to source cut-off voltage

Transconductance

Output power

VDS=3V,VGS=0V

-1.0

400

IDSS

VDS=3V,ID=1.0mA

-5.0

VGS(off)

VDS=3V,ID=150mA

VDS=10V,ID=150mA,f=1.9GHz

Pin=8dBm

130

dBm

hadd

GLP

Power added Efficiency

Linear Power Gain

Noise figure

VDS=10V,ID=150mA,f=1.9GHz

1.0

Rth(ch-c) Thermal Resistance *1

*1:Channel to case /

DVf Method

°C/W

Above parameters, ratings, limits are subject to change.

Mitsubishi Electric

June/2004

MGF0918A TYPICAL CHARACTERISTICS

Po,Gp,PAE vs.Pin

Vds=10V

Id(off)=150mA

f=1.9GHz

VDS=6V

ID=0.1A

f=1.9GHz

PAE

-10

-5

Pin(dBm)

Pi(SCL) vs. Po(SCL), IM3

V D = 1 0 V

ID=150mA

f 1 = 1 . 9 0 G H z

f 2 = 1 . 9 1 G H z

-10

-20

-30

-40

-50

-60

-70

I M 3

-5

-10

-15

-20

-15

-10

-5

Pin(SCL)(dBm)

Mitsubishi Electric

June/2004

MGF0918A S PARAMETERS

(Ta=25 C, VD=10V,ID=150mA, Reference Plane see Fig.1)

freq.

(MHz)

S11

S21

S12

S22

MAG/MSG

(dB)

(mag)

(ang)

(mag)

(ang)

(mag)

(ang)

(mag)

(ang)

600

1000

1400

1800

2200

2600

3000

3400

3800

4200

4600

5000

5400

5800

6200

6600

7000

7400

7800

8200

8600

9000

9400

9800

10200

10600

11000

11400

11800

12200

0.966

0.939

0.919

0.905

0.897

0.892

0.890

0.889

0.888

0.886

0.883

0.877

0.868

0.856

0.840

0.820

0.797

0.771

0.743

0.713

0.674

0.618

0.545

0.485

0.475

0.535

0.640

0.730

0.813

0.876

-47.70

-72.11

-90.91

6.220

5.269

4.470

3.805

3.257

2.811

2.453

2.168

1.946

1.775

1.647

1.553

1.489

1.448

1.427

1.423

1.433

1.457

1.491

1.536

1.587

1.643

1.699

1.748

1.782

1.788

1.753

1.656

1.473

1.176

142.02

120.98

103.95

89.91

78.05

67.78

58.64

50.31

42.56

35.21

28.16

21.31

14.56

7.83

0.015

0.021

0.024

0.026

0.025

0.024

0.023

0.022

0.023

0.024

0.025

0.027

0.029

0.031

0.035

0.038

0.042

0.047

0.053

0.058

0.064

0.071

0.077

0.082

0.086

0.088

0.087

56.75

41.10

27.49

15.71

5.60

0.302

0.360

0.426

0.492

0.553

0.606

0.651

0.687

0.716

0.738

0.754

0.768

0.779

0.788

0.797

0.806

0.814

0.820

0.824

0.818

0.806

0.786

0.759

0.723

0.678

0.636

0.609

0.607

0.636

-56.49

-78.28

-94.16

0.21

0.29

0.36

0.42

0.49

0.60

0.70

0.76

0.86

0.93

1.07

1.10

1.15

1.20

1.18

1.21

1.12

1.13

1.19

1.27

1.40

1.47

1.45

1.38

1.22

1.15

1.14

1.19

26.18

24.00

22.70

21.65

20.98

20.51

20.09

19.56

19.27

18.87

17.15

16.35

15.58

14.90

14.51

14.33

13.88

14.06

13.86

13.40

12.62

11.77

10.90

10.32

10.00

10.44

10.47

9.96

-105.49

-116.96

-126.16

-133.71

-140.07

-145.57

-150.45

-154.92

-159.19

-163.52

-168.29

-173.99

177.60

172.89

162.95

154.14

146.69

137.66

123.53

102.00

73.05

-105.68

-114.07

-120.27

-125.02

-128.82

-132.05

-134.94

-137.64

-140.24

-142.75

-145.19

-147.53

-149.77

-151.90

-153.92

-155.84

-157.68

-159.47

-161.21

-162.88

-164.44

-165.75

-166.62

-166.73

-165.59

-162.55

-156.74

-3.00

-10.20

-16.12

-20.89

-24.64

-27.52

-29.72

-31.42

-32.85

-34.23

-35.84

-37.92

-40.74

-44.55

-49.58

-56.03

-64.03

-73.66

-84.89

-97.58

1.01

-6.02

-13.41

-21.33

-29.97

-39.52

-50.18

-62.15

-75.56

-90.54

-107.10

-125.18

-144.56

-164.88

177.63

160.67

39.23

5.13

-23.88

-43.68

-54.21

-63.08

-111.47

-126.11

-140.87

-154.90

-167.09

8.65

2.0

0.8

Gate Mark

Round corner

0.80

Gate Mark

(1)

Reference Plane

(3)

(2)

0.6

(2)

0.25

4.00

2.5

BACK SIDE PATTERN

(1) Gate

(2) Drain

(3) Source

(Unit:mm)

Fig.1 OUTLINE DRAWING

Mitsubishi Electric

June/2004

MITSUBISHI SEMICONDUCTOR<GaAs FET>

MGF0918A

L & S BAND GaAs FET [ SMD non – matched ]

Requests Regarding Safety Designs

Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts,

however, there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other

problems. In view of this reality, it is requested that every feasible precaution be taken in the pursuit of redundancy

design, malfunction prevention design and other safety-related designs, to prevent breakdowns or malfunctions in our

products from resulting in accidents involving people, fires, social losses or other problems, thereby upholding the

highest levels of safety in the products when in use by customers.

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1. These materials are designed as reference materials to ensure that all customers purchase Mitsubishi Electric

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Mitsubishi Electric

June/2004

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