MGF0921A_11 [MITSUBISHI]
High-power GaAs FET (small signal gain stage); 高功率GaAs FET（小信号增益级）
| 型号： | MGF0921A_11 |
| 厂家： | 
Mitsubishi Group |
| 描述： | High-power GaAs FET (small signal gain stage) |
| 文件： | 总4页 (文件大小：215K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
< High-power GaAs FET (small signal gain stage) >
MGF0921A
L & S BAND / 2W
SMD non - matched
DESCRIPTION
The MGF0921A GaAs FET with an N-channel schottky
Gate, is designed for use UHF band amplifiers.
FEATURES
High output power
Po=33dBm(TYP.) @f=1.9GHz,Pin=17dBm
High power gain
Gp=17dB(TYP.) @f=1.9GHz
High power added efficiency
add=40%(TYP.) @f=1.9GHz,Pin=17dBm
Hermetic Package
APPLICATION
For UHF Band power amplifiers
QUALITY
GG
Fig.1
RECOMMENDED BIAS CONDITIONS
Vds=10V Ids=500mA Rg=200
Delivery
-01:Tape & Reel(1K), -03:Trai(50pcs)
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
Ratings
Unit
Gate to source
VGSO
breakdown voltage
-15
-15
V
V
VGDO Gate to drain breakdown voltage
ID
Drain current
1800
-5.0
mA
mA
mA
W
IGR
IGF
PT
Reverse gate current
Forward gate current
Total power dissipation
Cannel temperature
Storage temperature
15
10
Tch
Tstg
175
C
C
-65 to +175
Electrical characteristics
(Ta=25C)
Symbol
Parameter
Test conditions
Limits
Unit
mA
Min.
-
Typ.
Max.
1800
Saturated drain current
VDS=3V,VGS=0V
1100
IDSS
Gate to source cut-off voltage
Transconductance
VDS=3V,ID=4.0mA
VDS=3V,ID=500mA
VDS=10V,ID=500mA,f=1.9GHz
Pin=17dBm
-1.0
-
-
-5.0
V
mS
dBm
%
VGS(off)
gm
370
33
38
17
11
-
-
Po
Output power
31
-
add
GLP
Power added Efficiency
Linear Power Gain
-
VDS=10V,ID=500mA,f=1.9GHz
Vf Method
15
-
-
dB
Rth(ch-c) Thermal Resistance *1
15
C/W
*1:Channel to case /
Above parameters, ratings, limits are subject to change.
Publication Date : Apr., 2011
1
< High-power GaAs FET (small signal gain stage) >
MGF0921A
L & S BAND / 2W
SMD non - matched
MGF09121A TYPICAL CHARACTERISTICS
Publication Date : Apr., 2011
2
< High-power GaAs FET (small signal gain stage) >
MGF0921A
L & S BAND / 2W
SMD non - matched
MGF0921A S PARAMETERS (Ta=25C,VD=10V,ID=500mA, Reference Plane see Fig.1)
Publication Date : Apr., 2011
3
< High-power GaAs FET (small signal gain stage) >
MGF0921A
L & S BAND / 2W
SMD non - matched
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© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : Apr., 2011
4
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