MGF1403-61-23 [MITSUBISHI]

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, CERAMIC PACKAGE-4;
MGF1403-61-23
型号: MGF1403-61-23
厂家: MITSUBISHI ELECTRIC SEMICONDUCTOR    MITSUBISHI ELECTRIC SEMICONDUCTOR
描述:

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, CERAMIC PACKAGE-4

放大器 晶体管
文件: 总8页 (文件大小:238K)
下载:  下载PDF数据表文档文件

MGF1403B

LOW NOISE GaAs FET

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31 MITSUBISHI

MGF1403B

LOW NOISE GaAs FET

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18 MITSUBISHI

MGF1403B_1

LOW NOISE GaAs FET

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16 MITSUBISHI

MGF1403B-01

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

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0 MITSUBISHI

MGF1403BV-01

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

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0 MITSUBISHI

MGF1403BX-01

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

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0 MITSUBISHI

MGF1404

Transistor

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0 MITSUBISHI

MGF1412-11-09

RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-4

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0 MITSUBISHI

MGF1412-11-10

RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-4

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0 MITSUBISHI

MGF1412B-01

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, METAL CERAMIC, GD-9, 4 PIN

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0 MITSUBISHI

MGF1412BV-01

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, METAL CERAMIC, GD-9, 4 PIN

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0 MITSUBISHI

MGF1412BX-01

暂无描述

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0 MITSUBISHI

MGF1423

Transistor

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0 MITSUBISHI

MGF1423-61-23

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, CERAMIC PACKAGE-4

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0 MITSUBISHI

MGF1423B

SMALL SIGNAL GaAs FET

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32 MITSUBISHI