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MGF1423 [MITSUBISHI]

Transistor;
MGF1423
型号: MGF1423
厂家: Mitsubishi Group    Mitsubishi Group
描述:

Transistor

文件: 总5页 (文件大小:496K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

MGF1423-61-23

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, CERAMIC PACKAGE-4

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MGF1423B

SMALL SIGNAL GaAs FET

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MGF1423B-01

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, GD-9, 4 PIN

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MGF1423BV-01

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, GD-9, 4 PIN

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MGF1423BX-01

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, GD-9, 4 PIN

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MGF1425

Transistor

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MGF1425-61-16

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, CERAMIC PACKAGE-4

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MGF1425B

RF Small Signal Field-Effect Transistor, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

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MGF1425B-01

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, GD-9, 4 PIN

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MGF1425BV-01

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, GD-9, 4 PIN

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MGF1425BX-01

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, GD-9, 4 PIN

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MGF1451A

Low Noise MES FET

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MGF1601

Transistor

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MGF1601A-01

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-4

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MGF1601B

MICROWAVE POWER GaAs FET

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MGF1601B_1

MICROWAVE POWER GaAs FET

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MGF1601B_11

High-power GaAs FET (small signal gain stage)

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MGF1801

MICROWAVE POWER GaAs FET

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MGF1801-01

RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-4

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MITSUBISHI

MGF1801B

MICROWAVE POWER GaAs FET

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MITSUBISHI