MGF1601B_11 [MITSUBISHI]
High-power GaAs FET (small signal gain stage); 高功率GaAs FET（小信号增益级）
| 型号： | MGF1601B_11 |
| 厂家： | 
Mitsubishi Group |
| 描述： | High-power GaAs FET (small signal gain stage) |
| 文件： | 总4页 (文件大小：208K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
< High-power GaAs FET (small signal gain stage) >
MGF1601B
S to X BAND / 0.15W
non - matched
DESCRIPTION
The MGF1601B, medium-power GaAs FET with an N-channel
Schottky gate, is designed for use in S to X band amplifiers and
oscillators. The hermetically sealed metalceramic package assures
minimum parasitic lasses, and has a configuration suitable for
microstrip circuits.
FEATURES
High linear power gain
Glp=8.0dB @f=8GHz
High P1dB
P1dB=21.8dBm(TYP.) @f=8GHz
APPLICATION
S to X Band medium-power amplifiers and oscillators
QUALITY
GG
RECOMMENDED BIAS CONDITION
VDS=6V,Id=100mA Refer to Bias Procedure
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
Ratings
Unit
Gate to drain
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
VGDO
breakdown voltage
-8
-8
V
V
VGSO Gate to source breakdown voltage
ID
Drain current
250
mA
mA
mA
W
IGR
IGF
PT
Reverse gate current
Forward gate current
Total power dissipation
Cannel temperature
Storage temperature
-0.6
1.5
1.2
Tch
Tstg
175
C
C
-65 to +175
Electrical characteristics
(Ta=25C)
Symbol
Parameter
Test conditions
Limits
Typ.
Unit
Min.
Max.
V(BR)GDO
V(BR)GSO
IGSS
IDSS
-8
-8
-
-
-
V
V
Gate to drain breakdown voltage
Ig
=200A
=200A
VDS=0V,VGS=-3V
Gate to source breakdown voltage Ig
-
-
Gate to source leakage current
Saturated drain current
Gate to source cut-off voltage
Transconductance
-
20
250
-4.5
-
A
mA
V
VDS=3V,VGS=0V
150
-1.5
70
6
200
-
VDS=3V,ID=100A
VDS=3V,ID=100mA
VDS=6V,ID=100mA,f=8GHz
VDS=6V,ID=100mA,f=8GHz
ΔVf method
VGS(off)
gm
GLP
90
8
mS
dB
Linear Power Gain
-
P1dB
Rth(ch-c)
20.8
-
21.8
-
-
dBm
℃/W
Output power at 1dB gain compression
Thermal resistance *1
125
*1:Channel to ambient
Publication Date : Apr., 2011
1
< High-power GaAs FET (small signal gain stage) >
MGF1601B
S to X BAND / 0.15W
non - matched
MGF1601B TYPICAL CHARACTERISTICS
(Ta=25C)
Publication Date : Apr., 2011
2
< High-power GaAs FET (small signal gain stage) >
MGF1601B
S to X BAND / 0.15W
non - matched
MGF1601B S PARAMETERS(Ta=25C,VD=6V,ID=100mA)
Publication Date : Apr., 2011
3
< High-power GaAs FET (small signal gain stage) >
MGF1601B
S to X BAND / 0.15W
non - matched
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
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circuit application examples contained in these materials.
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© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : Apr., 2011
4
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