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MGF4714AP-65 [MITSUBISHI]

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET;

MGF4714AP-65


元器件型号：	MGF4714AP-65
生产厂家：	MITSUBISHI ELECTRIC SEMICONDUCTOR
描述和应用：	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET 放大器晶体管
PDF文件：	总5页 (文件大小：298K)
下载文档：	下载PDF数据表文档文件
型号参数：MGF4714AP-65参数

MGF4714CP

PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT

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40 MITSUBISHI

MGF4851A

SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)

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34 MITSUBISHI

MGF4910D

TAPE CARRIER SUPER LOW NOISE INGAAS HEMT

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29 MITSUBISHI

MGF4910E

SUPER LOW MOISE InGaAs HEMT

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20 MITSUBISHI

MGF4914D

TAPE CARRIER SUPER LOW NOISE INGAAS HEMT

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18 MITSUBISHI

MGF4914D-65

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

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0 MITSUBISHI

MGF4914E

SUPER LOW MOISE InGaAs HEMT

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14 MITSUBISHI

MGF4914E-01

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-4

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0 MITSUBISHI

MGF4914E-01

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-4

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0 MITSUBISHI

MGF4914E-65

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

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0 MITSUBISHI

MGF4916

SUPER LOW NOISE InGaAs HEMT

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66 MITSUBISHI

MGF4916D

TAPE CARRIER SUPER LOW NOISE INGAAS HEMT

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17 MITSUBISHI

MGF4916D-01

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

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0 MITSUBISHI

MGF4916D-01

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

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0 MITSUBISHI

MGF4916F

Transistor

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0 MITSUBISHI

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