MGF4964BL [MITSUBISHI]

Low Noise GaAs HEMT; 低噪声的GaAs HEMT
MGF4964BL
型号: MGF4964BL
厂家: MITSUBISHI ELECTRIC SEMICONDUCTOR    MITSUBISHI ELECTRIC SEMICONDUCTOR
描述:

Low Noise GaAs HEMT
低噪声的GaAs HEMT

晶体 小信号场效应晶体管 射频小信号场效应晶体管 放大器
文件: 总5页 (文件大小:229K)
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MGF65A3H

Trench Field Stop IGBTs with Fast Recovery Diode

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0 SANKEN

MGF65A4H

Trench Field Stop IGBTs with Fast Recovery Diode

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2 SANKEN

MGF65A6L

VCE = 650 V, IC = 60 A Trench Field Stop IGBTs with Fast Recovery Diode

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0 SANKEN

MGF-7002A

RF/Microwave Amplifier, GAAS

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0 MITSUBISHI

MGF7004

Transistor

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0 MITSUBISHI

MGF7006

Wide Band Low Power Amplifier, 200MHz Min, 1800MHz Max,

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0 MITSUBISHI

MGF7006-01

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

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0 MITSUBISHI

MGF7051A

SPDT, 800MHz Min, 2000MHz Max, 1.5dB Insertion Loss-Max

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0 MITSUBISHI

MGF7103-01

Narrow Band Medium Power Amplifier, 824MHz Min, 849MHz Max,

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1 MITSUBISHI

MGF7104-01

Narrow Band Medium Power Amplifier, 872MHz Min, 905MHz Max,

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0 MITSUBISHI

MGF7105-01

Narrow Band Medium Power Amplifier, 890MHz Min, 915MHz Max,

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0 MITSUBISHI

MGF7108A

Narrow Band Medium Power Amplifier, 898MHz Min, 925MHz Max, GAAS,

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0 MITSUBISHI

MGF7108A

Narrow Band Medium Power Amplifier, 898MHz Min, 925MHz Max, GAAS,

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0 MITSUBISHI

MGF7113C

Narrow Band Medium Power Amplifier, 824MHz Min, 849MHz Max, GAAS,

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0 MITSUBISHI

MGF7113P

Narrow Band Medium Power Amplifier, 824MHz Min, 849MHz Max, GAAS,

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0 MITSUBISHI