MGFC4416D-03 [MITSUBISHI]
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6;![MGFC4416D-03](http://pdffile.icpdf.com/pdf2/p00256/img/icpdf/MGF4318E-30_1548785_icpdf.jpg)
型号: | MGFC4416D-03 |
厂家: | ![]() |
描述: | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6 |
文件: | 总12页 (文件大小:757K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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MGFC4417D-02
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6
MITSUBISHI
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MGFC4417D-03
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6
MITSUBISHI
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MGFC4418D-02
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6
MITSUBISHI
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MGFC4418D-03
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6
MITSUBISHI
![](http://pdffile.icpdf.com/pdf2/p00239/img/page/MGFC4414D-02_1442284_files/MGFC4414D-02_1442284_1.jpg)
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MGFC4418E-03
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6
MITSUBISHI
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MGFC4419G-A01
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3
MITSUBISHI
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MGFC4419G-A02
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3
MITSUBISHI
![](http://pdffile.icpdf.com/pdf2/p00268/img/page/MGFC4419G-A0_1613366_files/MGFC4419G-A0_1613366_1.jpg)
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MGFC4419G-A03
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3
MITSUBISHI
![](http://pdffile.icpdf.com/pdf2/p00268/img/page/MGFC4419G-A0_1613366_files/MGFC4419G-A0_1613366_1.jpg)
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MGFC4419G-A11
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3
MITSUBISHI
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MGFC4419G-A12
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3
MITSUBISHI
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MGFC4419G-A13
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3
MITSUBISHI
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