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MGFC4418D-02 [MITSUBISHI]

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6;

MGFC4418D-02


元器件型号：	MGFC4418D-02
生产厂家：	MITSUBISHI ELECTRIC SEMICONDUCTOR
描述和应用：	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6 放大器晶体管
PDF文件：	总12页 (文件大小：757K)
下载文档：	下载PDF数据表文档文件
型号参数：MGFC4418D-02参数

MGFC4418D-03

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6

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0 MITSUBISHI

MGFC4418D-03

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6

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0 MITSUBISHI

MGFC4418E-03

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6

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0 MITSUBISHI

MGFC4418E-03

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6

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0 MITSUBISHI

MGFC4419G

InGaAs HEMT Chip

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29 MITSUBISHI

MGFC4419G

InGaAs HEMT Chip

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31 MITSUBISHI

MGFC4419G-A03

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3

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0 MITSUBISHI

MGFC4419G-A11

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3

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0 MITSUBISHI

MGFC4419G-A12

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3

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0 MITSUBISHI

MGFC4419G-A13

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3

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0 MITSUBISHI

MGFC4424D-03

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6

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0 MITSUBISHI

MGFC4427D-03

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6

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0 MITSUBISHI

MGFC4453A-A03

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3

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0 MITSUBISHI

MGFC4453A-A13

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3

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0 MITSUBISHI

MGFC44V3436

3.4-3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET

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50 MITSUBISHI

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