MGFC4419G [MITSUBISHI]

InGaAs HEMT Chip; 的InGaAs HEMT芯片
MGFC4419G
元器件型号: MGFC4419G
生产厂家: MITSUBISHI ELECTRIC SEMICONDUCTOR    MITSUBISHI ELECTRIC SEMICONDUCTOR
描述和应用:

InGaAs HEMT Chip
的InGaAs HEMT芯片

PDF文件: 总5页 (文件大小:55K)
下载文档:  下载PDF数据表文档文件
型号参数:MGFC4419G参数

MGFC4419G-A03

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3

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0 MITSUBISHI

MGFC4419G-A11

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3

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0 MITSUBISHI

MGFC4419G-A12

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3

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0 MITSUBISHI

MGFC4419G-A13

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3

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0 MITSUBISHI

MGFC4424D-03

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6

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0 MITSUBISHI

MGFC4427D-03

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6

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0 MITSUBISHI

MGFC4453A-A03

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3

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0 MITSUBISHI

MGFC4453A-A13

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3

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0 MITSUBISHI

MGFC44V3436

3.4-3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET

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50 MITSUBISHI

MGFC44V3436-01

Transistor

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0 MITSUBISHI

MGFC44V3436-51

Transistor

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0 MITSUBISHI

MGFC44V3642

3.6-4.2GHz BAND 24W INTERNALLY MATCHED GaAs FET

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17 MITSUBISHI

MGFC44V3642

3.6-4.2GHz BAND 24W INTERNALLY MATCHED GaAs FET

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7 MITSUBISHI

MGFC44V3642_98

3.6-4.2GHz BAND 24W INTERNALLY MATCHED GaAs FET

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5 MITSUBISHI

MGFC44V3642-51

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET

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0 MITSUBISHI