MGFK36V4045-01 [MITSUBISHI]

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET;
MGFK36V4045-01
型号: MGFK36V4045-01
厂家: MITSUBISHI ELECTRIC SEMICONDUCTOR    MITSUBISHI ELECTRIC SEMICONDUCTOR
描述:

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET

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文件: 总2页 (文件大小:86K)
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MGFK37V4045

14.0-14.5GHz BAND 5W INTERNALLY MATCHED GaAs FET

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22 MITSUBISHI

MGFK37V4045

X/Ku band internally matched power GaAs FET

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8 MITSUBISHI

MGFK37V4045

14.0-14.5GHz BAND 5W INTERNALLY MATCHED GaAs FET

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9 MITSUBISHI

MGFK37V4045_11

X/Ku band internally matched power GaAs FET

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16 MITSUBISHI

MGFK37V4045_97

14.0-14.5GHz BAND 5W INTERNALLY MATCHED GaAs FET

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6 MITSUBISHI

MGFK37V4045-01

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET

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0 MITSUBISHI

MGFK37V4045-51

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET

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0 MITSUBISHI

MGFK38A3745

13.75-14.50GHz BAND 6W INTERNALLY MATCHED GaAs FET

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27 MITSUBISHI

MGFK38A3745

X/Ku band internally matched power GaAs FET

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23 MITSUBISHI

MGFK38A3745_11

X/Ku band internally matched power GaAs FET

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18 MITSUBISHI

MGFK38V2228

12.2-12.8GHz BAND 6W INTERNALLY MATCHED GaAs FET

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23 MITSUBISHI

MGFK38V2228-01

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-14, 2 PIN

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0 MITSUBISHI

MGFK38V2228-51

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET

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0 MITSUBISHI

MGFK38V2732

12.7-13.2GHz BAND 6W INTERNALLY MATCHED GaAs FET

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14 MITSUBISHI

MGFK39V4045

14.0-14.5 GHz BAND / 8W

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5 MITSUBISHI