MGFS45V2735-51 [MITSUBISHI]
Transistor;![MGFS45V2735-51](http://pdffile.icpdf.com/pdf2/p00219/img/icpdf/MGFS45V2735-_1256847_icpdf.jpg)
型号: | MGFS45V2735-51 |
厂家: | ![]() |
描述: | Transistor 晶体管 |
文件: | 总3页 (文件大小:122K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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< L/S band internally matched power GaAs FET >
MGFS45V2735
2.7 – 3.5 GHz BAND / 30W
unit : mm
DESCRIPTION
OUTLINE
The MGFS45V2735 is an internally impedance-matched
GaAs power FET especially designed for use in 2.7 - 3.5
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
24 +/- 0.3
0.6 +/- 0.15
(1)
FEATURES
Class A operation
R1.2
Internally matched to 50(ohm) system
High output power
P1dB=30W (TYP.) @f=2.7 - 3.5GHz
High power gain
(2)
GLP=12.0dB (TYP.) @f=2.7 - 3.5GHz
High power added efficiency
P.A.E.=36% (TYP.) @f=2.7 - 3.5GHz
Low distortion [item -51]
(3)
20.4 +/- 0.2
16.7
IM3=-45dBc (TYP.) @Po=34.5dBm S.C.L
APPLICATION
item 01 : 2.7 - 3.5 GHz band power amplifier
item 51 : 2.7 - 3.5 GHz band digital radio communication
QUALITY
IG
RECOMMENDED BIAS CONDITIONS
(1) gate
(2) source(flange)
(3)drain
VDS=10V ID=8A RG=25ohm
GF-38
Absolute maximum ratings (Ta=25C)
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Symbol
VGDO
Parameter
breakdown voltage
Ratings
Unit
V
Gate to drain
-15
VGSO Gate to source breakdown voltage
-15
V
ID
Drain current
20
A
IGR
IGF
PT *1
Tch
Reverse gate current
Forward gate current
Total power dissipation
Cannel temperature
Storage temperature
-80
mA
mA
W
168
150
175
C
C
Tstg
*1 : Tc=25C
-65 to +175
Electrical characteristics
(Ta=25C)
Symbol
Parameter
Test conditions
Limits
Typ.
24
Unit
Min.
Max.
Saturated drain current
Transconductance
VDS=3V,VGS=0V
-
-
-
-
A
S
IDSS
VDS=3V,ID=8A
8
gm
Gate to source cut-off voltage
VDS=3V,ID=160mA
-2
44
11
-
-
-5
-
V
VGS(off)
P1dB
GLP
Output power at 1dB gain compression VDS=10V,ID(RF off)=8.0A
45
dBm
dB
A
f=2.7 – 3.5GHz
Linear Power Gain
Drain current
12
-
ID
8
-
P.A.E.
IM3 *2
Rth(ch-c) *3
Power added efficiency
3rd order IM distortion
Thermal resistance
-
36
-
%
-42
-
-45
0.8
-
dBc
C/W
delta Vf method
1
*2 :item -51 ,2 tone test,Po=34.5dBm Single Carrier Level ,f=2.7,3.1,3.5GHz,delta f=10MHz
*3 :Channel-case
Publication Date : Apr., 2011
1
< L/S band internally matched power GaAs FET >
MGFS45V2735
2.7 – 3.5 GHz BAND / 30W
MGFS45V2735 TYPICAL CHARACTERISTICS
P1dB,GLP vs. f
Po,P.A.E. vs. Pin
50
45
40
35
30
25
47
46
45
44
43
42
41
22
20
18
16
14
12
10
111
VDS=10V
ID=8A
f=3.1GHz
VDS=10V
ID=8A
P1dB
60
40
20
0
Po
P.A.E.
GLP
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6
FREQUENCY f (GHz)
15
20
25
30
35
40
INPUT POWER Pin (dBm)
Po,IM3 vs. Pin
42
40
38
36
34
32
30
28
26
VDS=10V
IDS=8A
f=3.5GHz
Delta f=10MHz
2-tone test
Po
-20
-30
-40
-50
-60
IM3
18
20
22
24
26
28
30
INPUT POWER Pin (dBm) S.C.L.
MGFS45V2735 S-parameters( Ta=25deg.C , VDS=10(V),IDS=8(A) )
S-Parameter (TYP.)
f
S11
Angle(deg)
S21
Angle(deg)
S12
Angle(deg)
S22
Angle(deg)
(GHz)
2.60
Magn.
0.63
0.58
0.51
0.47
0.47
0.50
0.51
0.49
0.45
0.48
0.64
Magn.
3.39
3.90
4.30
4.52
4.51
4.33
4.15
4.04
3.92
3.60
2.86
Magn.
0.03
0.04
0.05
0.06
0.06
0.06
0.05
0.06
0.06
0.06
0.05
Magn.
0.59
0.49
0.41
0.32
0.27
0.24
0.23
0.21
0.15
0.05
0.16
88
47
38
3
-17
-52
-86
-122
-157
166
134
100
49
26
-1
2.70
2.80
2.90
3.00
3.10
3.20
3.30
3.40
3.50
3.60
1
-31
-66
-101
-135
-168
159
117
76
-30
-51
-105
-152
166
123
61
-67
-106
-137
-165
174
149
165
-115
-11
-75
8
33
-40
Publication Date : Apr., 2011
2
< L/S band internally matched power GaAs FET >
MGFS45V2735
2.7 – 3.5 GHz BAND / 30W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any
third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or
circuit application examples contained in these materials.
•All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are subject
to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It
is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized
Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product
listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi
Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these
inaccuracies or errors.
Please also pay attention to information published by Mitsubishi Electric Corporation by various means,
including the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/).
•When using any or all of the information contained in these materials, including product data, diagrams,
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•Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or
system that is used under circumstances in which human life is potentially at stake. Please contact
Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when
considering the use of a product contained herein for any specific purposes, such as apparatus or systems
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Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of
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•Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor
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© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : Apr., 2011
3
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