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MGFS48V2527_04 [MITSUBISHI]

2.5 - 2.7GHz BAND 60W GaAs FET; 2.5 - 2.7GHz的波段60W的GaAs FET
MGFS48V2527_04
型号： MGFS48V2527_04
厂家： Mitsubishi Group    Mitsubishi Group
描述：

2.5 - 2.7GHz BAND 60W GaAs FET
2.5 - 2.7GHz的波段60W的GaAs FET
文件： 总6页 (文件大小：443K)
中文：  中文翻译
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MITSUBISHI SEMICONDUCTOR <GaAs FET>  
MGFS48V2527  
2.5 - 2.7GHz BAND 60W GaAs FET  
OUTLINE  
DESCRIPTION  
The MGFS48V2527 is a 60W push-pull type GaAs Power FET  
especially designed for use in 2.5 - 2.7GHz band amplifiers.  
The hermetically sealed metal-ceramic package guarantees high reliability.  
FEATURES  
Push-pull configuration  
High output power  
Pout = 60W (TYP.) @ f=2.5 - 2.7 GHz  
High power gain  
GLP = 10 dB (TYP.) @ f=2.5 - 2.7GHz  
High power added efficiency  
P.A.E. = 45 % (TYP.) @ f=2.5 - 2.7GHz  
APPLICATION  
2.5-2.7GHz band power amplifier  
QUALITY GRADE  
IG  
RECOMMENDED BIAS CONDITIONS  
VDS = 12 (V)  
ID = 4.0 (A)  
RG=20 (ohm) for each gate  
< Keep safety first in your circuit designs! >  
Mitsubishi Electric Corporation puts the maximum effort into  
making semiconductor products better and more reliable,  
but there is always the possibility that trouble may occur  
with them.Trouble with semiconductors may lead to personal  
injury, fire or property damage. Remember to give due  
consideration to safety when making your circuit designs,  
with appropriate measures such as (1)placement of  
substitutive, auxiliary circuits, (2)use of non-flammable  
material or (3)prevention against any malfunction or mishap.  
(Ta=25deg.C)  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Ratings  
-20  
Unit  
V
VGDO Gate to drain voltage  
VGSO Gate to source voltage  
PT *1 Total power dissipation  
-10  
V
107.1  
175  
W
Tch  
Channel temperature  
Storage temperature  
deg.C  
deg.C  
Tstg  
-65 / +175  
*1 : Tc=25deg.C  
(Ta=25deg.C)  
ELECTRICAL CHARACTERISTICS  
Limits  
Typ.  
Unit  
Symbol  
Parameter  
Test conditions  
Min.  
-1  
Max.  
-4  
VGS(off)  
P2dB  
Cut-off voltage  
VDS = 3V , ID = 17.3mA  
-
V
Output power at 2dB gain  
compression  
47  
48  
-
dBm  
GLP  
ID(RF)  
Linear power gain  
Drain current  
VDS=12V, ID(RF off)=4.0A, f=2.5 - 2.7GHz  
9
-
10  
11  
-
15  
-
dB  
A
P.A.E.  
Power added efficiency  
Thermal resistance  
-
45  
%
deg.C/W  
Rth (Ch-C)  
Channel to Case  
-
1.0  
1.4  
June-'04  
MITSUBISHI  
ELECTRIC  
(1/6)  
MGFS48V2527  
OUTPUT POWER & POWER ADDED EFFICIENCY vs. INPUT POWER  
TEST CONDITIONS : Ids(RFoff)=4A  
f=2.6GHz  
f=2.5GHz  
f=2.7GHz  
Vds=12V  
Vds=10V  
50  
45  
40  
35  
30  
25  
20  
15  
10  
80  
70  
60  
50  
40  
30  
20  
10  
0
50  
45  
40  
35  
30  
25  
20  
15  
10  
80  
70  
60  
50  
40  
30  
20  
10  
0
50  
45  
40  
35  
30  
25  
20  
15  
10  
80  
70  
60  
50  
40  
30  
20  
10  
0
Vds=12V  
Vds=10V  
Vds=12V  
Vds=10V  
Pout  
Pout  
PAE  
Pout  
PAE  
PAE  
10 15 20 25 30 35 40 45  
INPUT POWER(dBm)  
10 15 20 25 30 35 40 45  
INPUT POWER(dBm)  
10 15 20 25 30 35 40 45  
INPUT POWER(dBm)  
MITSUBISHI ELECTRIC CORPORATION  
June-'04  
(2/6)  
MGFS48V2527  
IMD vs. OUTPUT POWER  
TEST CONDITIONS :  
f=2.5GHz  
VDS=12V,ID(RF off)=4.0A  
2-tone test , Δf=5MHz  
f=2.6GHz  
IM3  
f=2.7GHz  
IM3  
-24  
-26  
-28  
-30  
-32  
-34  
-36  
-38  
-40  
-42  
-44  
-46  
-48  
-24  
-26  
-28  
-30  
-32  
-34  
-36  
-38  
-40  
-42  
-44  
-46  
-48  
-50  
-52  
-54  
-56  
-58  
-60  
-24  
-26  
-28  
-30  
-32  
-34  
-36  
-38  
-40  
-42  
-44  
-46  
-48  
-50  
-52  
-54  
-56  
-58  
-60  
IM3  
IM5  
IM5  
-50  
IM5  
-52  
-54  
-56  
-58  
-60  
28 30 32 34 36 38 40 42 44 46  
OUTPUT POWER(2tone)(dBm)  
28 30 32 34 36 38 40 42 44 46  
OUTPUT POWER(2tone)(dBm)  
28 30 32 34 36 38 40 42 44 46  
OUTPUT POWER(2tone)(dBm)  
MITSUBISHI ELECTRIC CORPORATION  
June-'04  
(3/6)  
MGFS48V2527  
TEST CIRCUIT  
MGFS48V2527  
VG  
VD  
R1  
C7  
C5  
C11  
R3  
C19  
C13  
C14  
C15  
C21  
C22  
C23  
C24  
C25  
C26  
C1  
C2  
INPUT  
C10  
OUTPUT  
C3  
C4  
C9  
C16  
C17C18  
C20  
R4  
C6  
C8  
C12  
R2  
VG  
VD  
C1,C2,C3,C4  
C5,C6  
C7,C8  
C9  
C10  
C11,C12  
C13,C14,C15  
C16,C17,C18  
C19,C20  
:8pF(GR708)  
:1000pF(GR40)  
:20pF(GR40)  
:1.5pF(GR111)  
:1pF(GR111)  
:20pF(GR40)  
:4.7μF(CM32B475K)  
:4.7μF(CM32B475K)  
:1000pF(GR40)  
Board material:Tefron thickness=0.6mm  
Specific dielectric constant=2.6  
C21,C22,C23,C24,C25,C26 :13pF(GR708)  
R1,R2 :20ohm  
R3,R4 :51ohm  
MITSUBISHI ELECTRIC CORPORATION  
June-'04  
(4/6)  
MGFS48V2527  
TEST CONDITIONS : f=2.0-3.0GHz,VDS=12V,ID=2.0A  
S11  
S22  
1.0  
S21,S12  
Polar Chart  
S21  
S12  
S11,S22  
Smith Chart  
Z=50Ω  
5.0  
4.0  
3.0  
2.0  
1.0  
0
2.0  
5.0  
0.2  
0.0  
0.2  
0.5  
1.0  
2.0  
5.0  
0.01  
0.02  
0.03  
0.04  
-0.2  
-5.0  
-2.0  
-0.5  
-1.0  
S PARAMETERS (Ta=25deg.C,VDS=12V,ID=2.0A)  
S Parameters (TYP.)  
f
S11  
Ang(deg.)  
S21  
Ang(deg.)  
S12  
Ang(deg.)  
S22  
(GHz)  
2.00  
2.05  
2.10  
2.15  
2.20  
2.25  
2.30  
2.35  
2.40  
2.45  
2.50  
2.55  
2.60  
2.65  
2.70  
2.75  
2.80  
2.85  
2.90  
2.95  
3.00  
Mag.  
0.343  
0.311  
0.301  
0.318  
0.354  
0.399  
0.452  
0.484  
0.512  
0.529  
0.523  
0.504  
0.460  
0.369  
0.231  
0.074  
0.188  
0.395  
0.569  
0.694  
0.773  
Mag.  
2.394  
2.448  
2.529  
2.575  
2.594  
2.620  
2.597  
2.603  
2.558  
2.569  
2.573  
2.629  
2.665  
2.734  
2.731  
2.623  
2.380  
2.085  
1.730  
1.389  
1.108  
Mag.  
0.042  
0.042  
0.046  
0.042  
0.044  
0.045  
0.039  
0.042  
0.040  
0.037  
0.039  
0.032  
0.034  
0.030  
0.027  
0.022  
0.014  
0.014  
0.018  
0.016  
0.015  
Mag.  
0.773  
0.760  
0.746  
0.724  
0.700  
0.690  
0.673  
0.659  
0.655  
0.649  
0.629  
0.636  
0.636  
0.645  
0.666  
0.695  
0.740  
0.781  
0.818  
0.844  
0.862  
Ang(deg.)  
164.4  
163.0  
163.3  
162.9  
163.5  
164.1  
165.6  
166.6  
167.8  
169.7  
170.7  
172.5  
175.1  
177.6  
-179.9  
-177.4  
-177.1  
-177.8  
-179.5  
178.8  
176.7  
30.9  
11.3  
-124.1  
-135.3  
-147.0  
-159.1  
-170.4  
176.5  
164.9  
153.3  
141.8  
130.9  
119.6  
106.5  
92.9  
-112.1  
-129.0  
-134.8  
-148.3  
-160.2  
-167.5  
176.5  
164.3  
161.2  
147.6  
135.6  
121.1  
100.6  
78.4  
58.1  
31.9  
-3.2  
-39.0  
-60.5  
-111.6  
-136.5  
-13.6  
-37.2  
-57.5  
-78.1  
-94.0  
-107.7  
-121.8  
-134.1  
-145.4  
-159.0  
-171.7  
171.2  
149.6  
85.3  
78.3  
59.9  
41.6  
22.2  
-26.1  
-53.1  
-72.1  
-88.0  
-99.3  
4.0  
-13.8  
-28.6  
-40.4  
This S-Parameter data show measurements performed on each single-ended FET.  
MITSUBISHI ELECTRIC CORPORATION  
(5/6)  
June-'04  
MITSUBISHI SEMICONDUCTOR <GaAs FET>  
MGFS48V2527  
2.5 - 2.7GHz BAND 60W GaAs FET  
June-'04  
MITSUBISHI  
ELECTRIC  
(6/6)  

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