ML7XX16 [MITSUBISHI]

2.5Gbps InGaAsP DFB LASER DIODE; 2.5Gbps的的InGaAsP DFB激光二极管
ML7XX16
型号: ML7XX16
厂家: Mitsubishi Group    Mitsubishi Group
描述:

2.5Gbps InGaAsP DFB LASER DIODE
2.5Gbps的的InGaAsP DFB激光二极管

二极管 激光二极管
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中文:  中文翻译
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MITSUBISHI LASER DIODES  
ML7xx16 SERIES  
2.5Gbps InGaAsP DFB LASER DIODE  
TYPE  
NAME  
ML725B16F  
DESCRIPTION  
FEATURES  
ML7xx16 series are uncooled DFB (Distributed Feedback) laser  
diodes for 2.5Gbps transmission emitting light beam at 1310nm.  
/4 shifted grating structure is employed to obtain excellent SMSR  
performance under 2.5Gbps modulation. Furthermore, ML7xx16 can  
operate in the wide temperature range form -20ºC to 85ºC without any  
temperature control.  
/4 phase shifted grating structure  
Wide temperature range operation  
(-20ºC to 85ºC )  
High side-mode-suppression-ratio (typical 45dB)  
High resonance frequency (typical 11GHz)  
APPLICATION  
2.5Gbps transmission  
ABSOLUTE MAXIMUM RATINGS  
Parameter  
Output power  
Ratings  
6
Symbol  
Po  
Conditions  
Unit  
mW  
mA  
CW  
-
IF  
200  
Laser forward current  
VRL  
IRD  
-
-
-
-
-
2
2
V
mA  
V
Laser reverse voltage  
PD forward current  
PD reverse voltage  
20  
VRD  
Tc  
ºC  
Operation temperature  
Storage temperature  
-20 ~ +85  
-40 ~+100  
Tstg  
ºC  
ELECTRICAL/OPTICAL CHARACTERISTICS Tc=25ºC  
Limits  
Parameter  
Threshold current  
Conditions  
Symbol  
Ith  
Unit  
Min.  
Typ.  
10  
Max.  
15  
CW  
-
-
mA  
mA  
CW,Tc=85ºC  
35  
50  
30  
75  
CW,Po=5mW  
40  
100  
-
-
mA  
mA  
Operation current  
Iop  
CW,Po=5mW,Tc=85ºC  
CW,Po=5mW  
Operating voltage  
Slope efficiency  
-
1.1  
1.8  
-
V
Vop  
CW,Po=5mW  
0.18  
0.25  
mW/mA  
CW,Po=5mW,Tc=-20ºC +85ºC  
CW,Po=5mW,Tc=-20ºC +85ºC  
1310  
45  
1290  
1330  
-
nm  
dB  
Peak wavelength  
p
Side mode suppression ratio  
35  
-
SMSR  
CW,Po=5mW  
CW,Po=5mW  
25  
40  
47  
Beam divergence angle (parallel)  
(perpendicular)  
deg.  
deg.  
GHz  
-
30  
Resonance frequency  
-
-
-
fr  
2.48832Gbps, Ibias=Ith,Ipp=40mA  
11  
2.48832Gbps, Ibias=Ith,Ipp=40mA  
not including package  
tr,tf  
Rise and fall time(10%-90%)  
150  
psec  
100  
-
CW,Po=5mW,VRD=1V  
VRD=5V  
0.1  
2.0  
1.0  
20  
mA  
A
Im  
Id  
Monitoring current (PD)  
Dark current (PD)  
-
-
-
pF  
VRD=5V,f=1MHz  
10  
Capacitance (PD)  
Ct  
MITSUBISHI  
ELECTRIC  
MITSUBISHI LASER DIODES  
ML7xx16 SERIES  
2.5Gbps InGaAsP DFB LASER DIODE  
OUTLINE DRAWINGS  
+0  
mm  
5.6  
-0.03  
ML725B16F  
4.25  
3.55 0.1  
(0.25)  
(3)  
(4)  
(4)  
(3)  
(1)  
Case  
(1)  
(2)  
1
0.1  
PD  
LD  
2.0Min.  
1.0Min.  
Emitting Facet  
Reference Plane  
(2)  
ML725B16F  
2.0 0.25  
(P.C.D.)  
4- 0.45 0.05  
(2)  
(1)  

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REFERENCE BOARD Manual for UV Sensor (QFN)
ETC