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ML920J40S-10 [MITSUBISHI]

2.5Gbps InGaAsP DFB LASER DIODE; 2.5Gbps的的InGaAsP DFB激光二极管
ML920J40S-10
型号： ML920J40S-10
厂家： Mitsubishi Group    Mitsubishi Group
描述：

2.5Gbps InGaAsP DFB LASER DIODE
2.5Gbps的的InGaAsP DFB激光二极管

二极管 激光二极管
文件： 总3页 (文件大小：211K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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ML9MXITXSU4BI0SHI SLAESERR IDIEODSES  
Notice : Some parametric limits are subject to change  
2.5Gbps InGaAsP DFB LASER DIODE  
TYPE  
ML925B40F / ML920J40S  
ML925J40F / ML920L40S  
NAME  
DESCRIPTION  
APPLICATION  
ML9XX40 series are uncooled DFB (Distributed Feedback) laser  
diodes for 2.5Gbps transmission emitting light beam at 1470~1610nm.  
λ/4 shifted grating structure is employed to obtain excellent SMSR  
performance under 2.5Gbps modulation. Furthermore, ML9xx40 can  
operate in the wide temperature range from 0oC to 85 oC without any  
temperature control. They are well suited for light source in long  
distance digital transmission application of coarse WDM.  
· 2.5Gbps long-haul transmission  
· Coarse WDM application  
FEATURES  
· λ/4 shifted grating structure  
· Wide temperature range operation (0oC to 85oC)  
· High side-mode-suppression-ratio (typical 45dB)  
· High resonance frequency (typical 11GHz)  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Po  
Parameter  
Conditions  
Ratings  
Unit  
Output power  
CW  
---  
6
150  
2
mW  
mA  
V
If  
VRL  
IFD  
Forward current (Laser diode)  
Reverse voltage (Laser diode)  
Forward current (Photo diode)  
Reverse voltage (Photo diode)  
---  
---  
2
20  
mA  
V
VRD  
---  
Tc  
Tstg  
Case temperature  
Storage temperature  
---  
---  
0 to +85  
-40 to +100  
ºC  
ºC  
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC)  
Symbol  
Ith  
Parameter  
Threshold current  
Test conditions  
Min. Typ. Max.  
Unit  
mA  
CW  
CW  
---  
---  
---  
---  
---  
---  
---  
10  
35  
45  
35  
70  
90  
1.1  
15  
40  
<*1>  
<*2>  
Tc=85ºC  
50  
Iop  
Operation current  
CW, Po=5mW  
CW, Po=5mW  
Tc=85ºC  
45  
mA  
<*1>  
<*2>  
80  
100  
1.5  
---  
Vop  
η
Operating voltage  
Slope efficiency  
CW, Po=5mW  
CW, Po=5mW  
CW, Po=5mW <*3>  
CW, Po=5mW  
V
0.17 0.22  
0.15 0.20  
mW/mA  
---  
Peak wavelength  
Side mode suppression ratio  
Side mode suppression ratio(RF)  
<*4>,<*5>  
45  
nm  
dB  
λp  
35  
---  
---  
---  
---  
---  
CW, Po=5mW, Tc=0 to 85ºC  
SMSR  
2.48832Gbps,Ib=Ith, Ipp=40mA  
45  
25  
Beam divergence angle (parallel) <*6> CW, Po=5mW  
(perpendicular) <*6> CW, Po=5mW  
deg.  
deg.  
θ //  
θ ┴  
---  
30  
---  
fr  
Resonance frequency  
2.48832Gbps,Ib=Ith, Ipp=40mA  
---  
11  
---  
GHz  
ps  
2.48832Gbps,Ib=Ith, Ipp=40mA  
tr,tf  
Rise and Fall time <*7>  
---  
80  
120  
20%-80%  
Monitoring output current (PD)  
Dark current (PD)  
Capacitance (PD)  
Im  
Id  
Ct  
0.1  
---  
---  
---  
---  
10  
1.0  
0.1  
20  
mA  
µA  
pF  
CW, Po=5mW,VRD=1V,RL=10Ω  
V
RD=5V  
VRD=5V  
<*1> Applied to ML9xx40-04~09 and -12~17.  
<*2> Applied to ML9xx40-10~11 and -18~19.  
<*3> Applied to ML925J40F and ML920L40S.  
<*6> Beam divergence is not applied to ML925J40F and ML920L40S.  
<*7> Except influence of the 18mm lead.  
MITSUBISHI  
ELECTRIC  
Feb. 2005  
ML9MXITXSU4BI0SHI SLAESERR IDIEODSES  
Notice : Some parametric limits are subject to change  
2.5Gbps InGaAsP DFB LASER DIODE  
<*4> Peak Wavelength  
Limits  
Type  
Symbol  
Test Condition  
Unit  
Min.  
Typ. Max.  
ML925B40F-01 / ML920J40S-01  
ML925J40F-01 / ML920L40S-01  
ML925B40F-04 / ML920J40S-04  
ML925J40F-04 / ML920L40S-04  
ML925B40F-05 / ML920J40S-05  
ML925J40F-05 / ML920L40S-05  
ML925B40F-06 / ML920J40S-06  
ML925J40F-06 / ML920L40S-06  
ML925B40F-07 / ML920J40S-07  
ML925J40F-07 / ML920L40S-07  
ML925B40F-08 / ML920J40S-08  
ML925J40F-08 / ML920L40S-08  
ML925B40F-09 / ML920J40S-09  
ML925J40F-09 / ML920L40S-09  
ML925B40F-10 / ML920J40S-10  
ML925J40F-10 / ML920L40S-10  
ML925B40F-11 / ML920J40S-11  
ML925J40F-11 / ML920L40S-11  
CW, Po=5mW  
Tc= 0 to 85ºC  
1530 1550 1570  
1467 1470 1473  
1487 1490 1493  
1507 1510 1513  
1527 1530 1533  
1547 1550 1553  
1567 1570 1573  
1587 1590 1593  
1607 1610 1613  
nm  
λp  
CW, Po=5mW  
Tc= 25ºC  
<*5> Peak Wavelength  
Limits  
Typ. Max.  
Type  
Symbol  
Test Condition  
Unit  
nm  
Min.  
ML925B40F-12 / ML920J40S-12  
ML925J40F-12 / ML920L40S-12  
ML925B40F-13 / ML920J40S-13  
ML925J40F-13 / ML920L40S-13  
ML925B40F-14 / ML920J40S-14  
ML925J40F-14 / ML920L40S-14  
ML925B40F-15 / ML920J40S-15  
ML925J40F-15 / ML920L40S-15  
ML925B40F-16 / ML920J40S-16  
ML925J40F-16 / ML920L40S-16  
ML925B40F-17 / ML920J40S-17  
ML925J40F-17 / ML920L40S-17  
ML925B40F-18 / ML920J40S-18  
ML925J40F-18 / ML920L40S-18  
ML925B40F-19 / ML920J40S-19  
ML925J40F-19 / ML920L40S-19  
1468 1470 1472  
1488 1490 1492  
1508 1510 1512  
1528 1530 1532  
1548 1550 1552  
1568 1570 1572  
1588 1590 1592  
1608 1610 1612  
CW, Po=5mW  
Tc= 25ºC  
λp  
MITSUBISHI  
ELECTRIC  
Feb. 2005  
ML9MXITXSU4BI0SHI SLAESERR IDIEODSES  
Notice : Some parametric limits are subject to change  
OUTLINE DRAWINGS  
2.5Gbps InGaAsP DFB LASER DIODE  
Dimensions : mm  
+0  
-0.03  
ML925B40F  
ML920J40S  
φ5.6  
(3)  
Case  
φ4.25  
Ｙ
LD  
(0.25)  
(1)  
(2)  
(3)  
(4)  
PD  
Ｘ
(4)  
(1)  
(2)  
ML925B40F  
±0.1  
1
φ3.55±0.1  
φ2.0Min.  
(3)  
Case  
φ1.0Min.  
LD  
(1)  
(2)  
Emitting Facet  
Reference Plane  
PD  
(4)  
ML920J40S  
±0.25  
φ2.0  
(P.C.D.)  
±0.05  
4-φ0.45  
Pin Connection  
( Top view )  
(1)  
(2)  
Dimensions : mm  
(3)  
ML925J40F  
ML920L40S  
+0  
-0.03  
φ5.6  
Case  
LD  
φ4.3  
Ｙ
(1)  
(2)  
(0.25)  
Top View  
(3)  
PD  
(4)  
Ｘ
(1)  
(2)  
(4)  
ML925J40F  
1±0.1  
φ3.75±0.1  
(3)  
Case  
Ｚ
LD  
(1)  
(2)  
Emitting Facet  
Reference Plane  
PD  
(4)  
±0.25  
φ2.0  
(P.C.D.)  
M
L
9
2
0
L
40S  
±0.05  
4-φ0.45  
Pin Connection  
(T ie
(1)  
(2)  
o
p
v
w
)
MITSUBISHI  
ELECTRIC  
Feb. 2005  

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