ML920J45S-01 [MITSUBISHI]
Laser Diode, 1550nm, HERMETIC SEALED, TO-CAN PACKAGE-4;型号: | ML920J45S-01 |
厂家: | Mitsubishi Group |
描述: | Laser Diode, 1550nm, HERMETIC SEALED, TO-CAN PACKAGE-4 光电 半导体 |
文件: | 总3页 (文件大小:197K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MITSUBISHI LASER DIODES
ML9xx45 SERIES
Notice: Some parametric limits are subject to change.
1550,1520nm InGaAsP FP LASER DIODES
TYPE
ML920J45S , ML920K45S, ML920Y45S
NAME
ML925B45F , ML925C45F
DESCRIPTION
FEATURES
ML9XX45 series are InGaAsP laser diodes which provide
a stable, single transverse mode oscillation with emission
wavelength of 1550nm and standard continuous light output
of 5mW.
•1550 or 1520nm typical emission wavelength, FP-LDs
•Low threshold current, low operating current
•Wide temperature range operation
(Tc=-40 to 85deg.C)
•φ5.6mm TO-CA N package
Flat window cap : ML920J45S, ML925B45F
Ball lens cap : ML920K45S, ML925C45F, ML920Y45S
ML9XX45 are hermetically sealed devices having the photo
diode for optical output monitoring. This is suitable for such
applications as FTTH (Fiber to the Home)systems.
APPLICATION
•~155Mbps FTTH system
ABSOLUTE MAXIMUM RATINGS
Symbol
Po
Parameter
Conditions
Ratings
Unit
mW
V
Light output power
Laser reverse voltage
PD reverse voltage
PD forward current
Operation temperature
Storage temperature
CW
6[4]
VRL
VRD
IFD
-
-
-
-
-
2
20
2
V
mA
deg.C
deg.C
Tc
-40 to +85
-40 to +100
Tstg
ELECTRICAL/OPTICAL CHARACTERISTICS(Tc=25oC)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Ith
Iop
Vop
η
Threshold current
CW
3
10
30
20
50
mA
mA
Operation current
Operating voltage
Slope efficiency
CW, Po=5mW[3mW]
CW, Po=5mW[3mW]
CW, Po=5mW[3mW]
10
---
1.1
1.5
0.5
1580
1544
3
V
0.15[0.1] 0.25[0.2]
mW/mA
-01spec
-02spec
1520
1495
---
1550
1520
1.5
Center wavelength
CW, Po=5mW[3mW]
λc
nm
Spectral Width
CW, Po=5mW, [3mW]RMS(-20dB)
CW, Po=5mW[3mW]
nm
deg.
∆λ
θ∥
Beam divergence angle(parallel)
Beam divergence angle
(perpendicular)
---
25[11]
---
θ⊥
CW, Po=5mW[3mW]
---
30[11]
---
deg.
tr,tf
Im
Id
Ct
Rise and Fall time (10%-90%)
Monitor Current (PD)
Dark Current (PD)
Ib=Ith,Po=5mW [3mW],10-90%
CW, Po=5mW[3mW], VRD=1V,
VRD=10V
VRD=10V, f=1MHz
CW, PL=3mW,SI10/125
---
0.1
---
---
0.2
0.3
0.5
---
10
0.5
0.7
1.0
0.1
20
nsec
mA
µA
Capacitance (PD)
pF
Pf(Note2)
---
mW
Fiber Coupling characteristics
at peak coupling<3>
ML920K45S
CW, PL=3mW
5.0
6.0
5.8
6.5
6.2
7.0
Df(Note2)
ML925C45F
mm
SI10/125
ML920Y45S
Note : <1> [ ]applied to the lens cap type.
Note : <2> Pf,Df are applied to the ball lens type.
Note : <3> Df is a distance between reference plane of the base to the fiber.
MITSUBISHI
ELECTRIC
May 2004
MITSUBISHI LASER DIODES
ML9xx45 SERIES
1550,1520nm InGaAsP FP LASER DIODES
OUTLINE DRAWINGS
Dimension : mm
+0
-0.03
φ5.6
ML920J45S
ML925B45F
φ4.25
Y
(3)
Case
LD
(0.25)
(1)
(2)
(3)
(4)
X
PD
(1)
(2)
(4)
ML920J45S
±0.1
1
φ3.55±0.1
φ1.5Min.
(3)
Case
LD
φ1.0Min.
Emitting Facet
Reference Plane
(1)
(2)
PD
(4)
ML925B45F
±0.25
φ2.0
(P.C.D.)
±0.05
4-φ0.45
Pin Connection
( Top view )
(1)
(2)
Dimension : mm
+0
-0.03
φ5.6
ML920K45S
ML925C45F
φ4.25
(3)
Case
Y
(0.25)
LD
(3)
(1)
(2)
X
(1)
(2)
PD
(4)
(4)
±0.1
1
ML920K45S
±0.1
φ3.55
(3)
±0.005
φ1.5
Case
LD
(1)
(2)
Emitting Facet
Reference Plane
PD
(4)
ML925C45F
±0.25
φ2.0
±0.05
4-φ0.45
(P.C.D.)
Pin Connection
(1)
(2)
( Top view )
MITSUBISHI
ELECTRIC
May 2004
MITSUBISHI LASER DIODES
ML9xx45 SERIES
1550,1520nm InGaAsP FP LASER DIODES
OUTLINE DRAWINGS
ML920Y45S
Dimension : mm
φ5.6
-0.03
+0
φ4.25
Y
(0.25)
(3)
(4)
(3)
X
Case
(1)
(2)
LD
(1)
(2)
±0.1
1
PD
±0.1
φ3.55
(4)
±0.005
φ1.5
ML920Y45S
( Top view )
Emitting Facet
Reference Plane
±0.25
φ2.0
(P.C.D.)
±0.05
4-φ0.45
(1)
(2)
MITSUBISHI
ELECTRIC
May 2004
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