ML920J45S [MITSUBISHI]

1550,1520nm InGaAsP FP LASER DIODES; 1550,1520nm的InGaAsP FP激光二极管


型号：	ML920J45S
厂家：	Mitsubishi Group
描述：	1550,1520nm InGaAsP FP LASER DIODES 1550,1520nm的InGaAsP FP激光二极管二极管激光二极管
文件：	总3页 (文件大小：199K)
中文：	中文翻译
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MITSUBISHI LASER DIODES

ML9xx45 SERIES

Notice: Some parametric limits are subject to change.

1550,1520nm InGaAsP FP LASER DIODES

TYPE

ML920J45S , ML920K45S, ML920Y45S

NAME

ML925B45F , ML925C45F

DESCRIPTION

FEATURES

ML9XX45 series are InGaAsP laser diodes which provide

a stable, single transverse mode oscillation with emission

wavelength of 1550nm and standard continuous light output

of 5mW.

•1550 or 1520nm typical emission wavelength, FP-LDs

•Low threshold current, low operating current

•Wide temperature range operation

(Tc=-40 to 85deg.C)

•φ5.6mm TO-CA N package

Flat window cap : ML920J45S, ML925B45F

Ball lens cap : ML920K45S, ML925C45F, ML920Y45S

ML9XX45 are hermetically sealed devices having the photo

diode for optical output monitoring. This is suitable for such

applications as FTTH (Fiber to the Home)systems.

APPLICATION

•~155Mbps FTTH system

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Conditions

Ratings

Unit

Light output power

Laser reverse voltage

PD reverse voltage

PD forward current

Operation temperature

Storage temperature

6[4]

VRL

VRD

IFD

deg.C

-40 to +85

-40 to +100

Tstg

ELECTRICAL/OPTICAL CHARACTERISTICS(Tc=25^oC)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Ith

Iop

Vop

Threshold current

Operation current

Operating voltage

Slope efficiency

CW, Po=5mW[3mW]

---

1.1

1.5

0.5

1580

1544

0.15[0.1] 0.25[0.2]

mW/mA

-01spec

-02spec

1520

1495

---

1550

1520

1.5

Center wavelength

CW, Po=5mW[3mW]

λc

Spectral Width

CW, Po=5mW, [3mW]RMS(-20dB)

CW, Po=5mW[3mW]

deg.

∆λ

θ∥

Beam divergence angle(parallel)

Beam divergence angle

(perpendicular)

---

25[11]

---

θ⊥

CW, Po=5mW[3mW]

---

30[11]

---

deg.

tr,tf

Rise and Fall time (10%-90%)

Monitor Current (PD)

Dark Current (PD)

Ib=Ith,Po=5mW [3mW],10-90%

CW, Po=5mW[3mW], VRD=1V,

VRD=10V

VRD=10V, f=1MHz

CW, PL=3mW,SI10/125

---

0.1

---

0.2

0.3

0.5

---

0.5

0.7

1.0

0.1

nsec

µA

Capacitance (PD)

Pf(Note2)

---

Fiber Coupling characteristics

at peak coupling<3>

ML920K45S

CW, PL=3mW

5.0

6.0

5.8

6.5

6.2

7.0

Df(Note2)

ML925C45F

SI10/125

ML920Y45S

Note : <1> [ ]applied to the lens cap type.

Note : <2> Pf,Df are applied to the ball lens type.

Note : <3> Df is a distance between reference plane of the base to the fiber.

MITSUBISHI

ELECTRIC

May 2004

MITSUBISHI LASER DIODES

ML9xx45 SERIES

1550,1520nm InGaAsP FP LASER DIODES

OUTLINE DRAWINGS

Dimension : mm

-0.03

φ5.6

ML920J45S

ML925B45F

φ4.25

Ｙ

(3)

Case

(0.25)

(1)

(2)

(3)

(4)

Ｘ

(1)

(2)

(4)

ML920J45S

±0.1

φ3.55±0.1

φ1.5Min.

(3)

Case

φ1.0Min.

Emitting Facet

Reference Plane

(1)

(2)

(4)

ML925B45F

±0.25

φ2.0

(P.C.D.)

±0.05

4-φ0.45

Pin Connection

( Top view )

(1)

(2)

Dimension : mm

-0.03

φ5.6

ML920K45S

ML925C45F

φ4.25

(3)

Case

Ｙ

(0.25)

(3)

(1)

(2)

Ｘ

(1)

(2)

(4)

±0.1

ML920K45S

±0.1

φ3.55

(3)

±0.005

φ1.5

Case

(1)

(2)

Emitting Facet

Reference Plane

(4)

ML925C45F

±0.25

φ2.0

±0.05

4-φ0.45

(P.C.D.)

Pin Connection

(1)

(2)

( Top view )

MITSUBISHI

ELECTRIC

May 2004

MITSUBISHI LASER DIODES

ML9xx45 SERIES

1550,1520nm InGaAsP FP LASER DIODES

OUTLINE DRAWINGS

ML920Y45S

Dimension : mm

φ5.6

-0.03

φ4.25

Ｙ

(0.25)

(3)

(4)

(3)

Ｘ

Case

(1)

(2)

(1)

(2)

±0.1

φ3.55

(4)

±0.005

φ1.5

ML920Y45S

( Top view )

Emitting Facet

Reference Plane

±0.25

φ2.0

(P.C.D.)

±0.05

4-φ0.45

(1)

(2)

MITSUBISHI

ELECTRIC

May 2004

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