PM100RSE060 [MITSUBISHI]
PM100RSE060;
| 型号： | PM100RSE060 |
| 厂家： | 
Mitsubishi Group |
| 描述： | PM100RSE060 运动控制电子器件 信号电路 电动机控制 局域网 |
| 文件： | 总6页 (文件大小：137K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI<INTELLIGENTPOWER MODULES>
PM100RSE060
FLAT-BASETYPE
INSULATEDPACKAGE
PM100RSE060
FEATURE
a) Adopting new 4th generation planar IGBT chip, which per-
formance is improved by 1µm fine rule process.
For example, typical VCE(sat)=1.7V
b) Using new Diode which is designed to get soft reverse
recovery characteristics.
• 3φ 100A, 600V Current-sense IGBT for 15kHz switching
• 30A, 600V Current-sense regenerative brake IGBT
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for over-
current, short-circuit, over-temperature & under-voltage
• Acoustic noise-less 11kW class inverter application
APPLICATION
General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES
Dimensions in mm
110
1
95 0.5
Screwing depth
Min9.0
2-2.54 2-2.54 2-2.54
6-2.54
4-φ5.5
17.02
3.22
10.16 10.16 10.16
MOUNTING HOLES
Terminal code
1. VUPC
2. U
11. VN1
12. B
13. U
14. V
15. W
16. F
1 2 3
4
5 6
7 8
9
10
12 14 16
11 13 15
P
r
3. VUP1
4. VVPC
N
N
5. V
P
N
6. VVP1
7. VWPC
O
8. W
P
9. VWP1
10. VNC
12
φ2.54
W
V
U
0.5 0.3
4-R6
21.2
2-2.54
24.5
26
26
3.22
22+–01..50
0.64
6-M5NUTS
2-φ2.54
67.4
A
16- 0.64
A : DETAIL
LABEL
Sep. 2001
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100RSE060
FLAT-BASE TYPE
INSULATED PACKAGE
INTERNAL FUNCTIONS BLOCK DIAGRAM
Rfo=1.5kΩ
WP
VWP1
VP
VVP1
UP
VUP1
Br Fo
V
NC
W
N
V
N1
V
N
UN
VWPC
VVPC
VUPC
Rfo
Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc
Gnd In Fo Vcc Gnd In
Vcc Gnd In
Gnd
Vcc Gnd In
Gnd
Si Out
Vcc
Gnd
Gnd
Gnd
Gnd
Gnd
Si Out
Si Out
Si Out
Si Out
Si Out
Si Out
Th
B
N
W
V
U
P
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
VCES
IC
Parameter
Collector-Emitter Voltage
Collector Current
Condition
Ratings
600
100
Unit
V
A
VD = 15V, VCIN = 15V
TC = 25°C
ICP
Collector Current (Peak)
Collector Dissipation
Junction Temperature
TC = 25°C
TC = 25°C
200
328
A
W
°C
PC
Tj
–20 ~ +150
BRAKE PART
Symbol
Parameter
Condition
Ratings
Unit
V
A
VCES
IC
Collector-Emitter Voltage
Collector Current
VD = 15V, VCIN = 15V
TC = 25°C
600
30
ICP
PC
Collector Current (Peak)
Collector Dissipation
TC = 25°C
TC = 25°C
60
176
A
W
V
VR(DC)
IF
FWDi Rated DC Reverse Voltage TC = 25°C
FWDi Forward Current
600
30
TC = 25°C
A
Tj
Junction Temperature
–20 ~ +150
°C
CONTROL PART
Symbol
Parameter
Condition
Ratings
20
Unit
V
Applied between : VUP1-VUPC
VVP1-VVPC, VWP1-VWPC, VN1-VNC
Applied between : UP-VUPC, VP-VVPC
WP-VWPC, UN • VN • WN • Br-VNC
Applied between : FO-VNC
Sink current at FO terminal
VD
Supply Voltage
VCIN
20
V
Input Voltage
VFO
IFO
Fault Output Supply Voltage
Fault Output Current
20
20
V
mA
Sep. 2001
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100RSE060
FLAT-BASE TYPE
INSULATED PACKAGE
TOTAL SYSTEM
Ratings
Unit
Symbol
Parameter
Condition
Supply Voltage Protected by
OC & SC
VD = 13.5 ~ 16.5V, Inverter Part,
Tj = 125°C Start
VCC(PROT)
400
500
V
V
VCC(surge) Supply Voltage (Surge)
Applied between : P-N, Surge value or without switching
Module Case Operating
Temperature
TC
(Note-1)
–20 ~ +100
°C
Storage Temperature
Isolation Voltage
Tstg
Viso
–40 ~ +125
°C
Vrms
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
2500
(Note-1) Tc measurement point is as shown below. (Base plate depth 3mm)
W
V
U
65mm
Tc
THERMAL RESISTANCES
Limits
Typ.
—
Symbol
Parameter
Test Condition
Unit
Min.
—
—
—
—
—
—
—
—
—
Max.
0.38
0.70
0.71
1.66
0.23
0.36
0.45
0.96
0.027
Rth(j-c)Q
Rth(j-c)F
Rth(j-c)Q
Rth(j-c)F
Rth(j-c’)Q
Rth(j-c’)F
Rth(j-c’)Q
Rth(j-c’)F
Rth(c-f)
Inverter IGBT part (per 1 element), (Note-1)
Inverter FWDi part (per 1 element), (Note-1)
Brake IGBT part, (Note-1)
—
—
—
Junction to case Thermal
Resistances
Brake FWDi part, (Note-1)
—
°C/W
Inverter IGBT part (per 1 element), (Note-2)
Inverter FWDi part (per 1 element), (Note-2)
Brake IGBT part, (Note-2)
—
—
—
Brake FWDi part, (Note-2)
Case to fin, Thermal grease applied (per 1 module)
—
Contact Thermal Resistance
(Note-2) TC measurement point is just under the chips.
If you use this value, Rth(f-a) should be measured just under the chips.
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Limits
Typ.
1.7
1.7
2.2
1.2
0.15
0.4
2.4
0.6
—
Unit
Test Condition
Symbol
VCE(sat)
Parameter
Collector-Emitter
Min.
—
—
Max.
2.3
2.3
3.3
2.4
0.3
1.0
3.3
1.2
1
VD = 15V, IC = 100A
VCIN = 0V, Pulsed
Tj = 25°C
(Fig. 1) Tj = 125°C
–IC = 100A, VD = 15V, VCIN = 15V
V
V
Saturation Voltage
(Fig. 2)
—
0.8
—
VEC
ton
FWDi Forward Voltage
VD = 15V, VCIN = 15V↔0V
VCC = 300V, IC = 100A
Tj = 125°C
trr
µs
—
tc(on)
toff
Switching Time
—
—
Inductive Load (upper and lower arm)
(Fig. 3)
tc(off)
Collector-Emitter
Cutoff Current
Tj = 25°C
Tj = 125°C
—
—
ICES
V
CE = VCES, VCIN = 15V
(Fig. 4)
mA
—
10
Sep. 2001
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100RSE060
FLAT-BASE TYPE
INSULATED PACKAGE
BRAKE PART
Limits
Unit
Test Condition
Symbol
Parameter
Min.
—
Typ.
1.8
1.9
2.5
—
Max.
2.5
2.6
3.5
1
Collector-Emitter
VD = 15V, IC = 30A
VCIN = 0V, Pulsed
IF = 30A
Tj = 25°C
(Fig. 1) Tj = 125°C
(Fig. 2)
VCE(sat)
VFM
V
V
Saturation Voltage
FWDi Forward Voltage
Collector-Emitter
Cutoff Current
—
—
Tj = 25°C
Tj = 125°C
—
—
V
CE = VCES, VCIN = 15V
(Fig. 4)
ICES
mA
—
10
CONTROL PART
Limits
Typ.
44
Symbol
Parameter
Circuit Current
Test Condition
VD = 15V, VCIN = 15V
Unit
mA
V
Min.
—
Max.
60
VN1-VNC
ID
VXP1-VXPC
—
13
18
Input ON Threshold Voltage
Input OFF Threshold Voltage
Vth(ON)
Applied between : UP-VUPC, VP-VVPC, WP-VWPC
1.2
1.7
—
1.5
2.0
—
1.8
2.3
520
430
—
UN • VN • WN • Br-VNC
Vth(OFF)
Tj = –20°C
Tj = 25°C
Tj = 125°C
Inverter part
VD = 15V
264
158
311
—
(Fig. 5,6)
OC
A
Over Current Trip Level
Break part
39
53
—
–20 ≤ Tj ≤ 125°C, VD = 15V
(Fig. 5,6)
Inverter part
Brake part
(Fig. 5,6)
—
—
—
360
79
10
—
—
—
SC
Short Circuit Trip Level
–20≤ Tj ≤ 125°C, VD = 15V (Fig. 5,6)
A
µs
°C
toff(OC)
OT
Over Current Delay Time
Over Temperature Protection
VD = 15V
Base-plate
Temperature detection, VD = 15V
Trip level
111
—
118
100
12.0
12.5
—
125
—
OTr
Reset level
Trip level
UV
Supply Circuit Under-Voltage
Protection
11.5
—
12.5
—
–20 ≤ Tj ≤ 125°C
VD = 15V, VFO = 15V
VD = 15V
V
UVr
Reset level
IFO(H)
IFO(L)
—
0.01
15
Fault Output Current
(Note-3)
(Note-3)
mA
ms
—
10
Minimum Fault Output Pulse
Width
tFO
1.0
1.8
—
(Note-3) Fault output is given only when the internal OC, SC, OT & UV protection.
Fault output of OT protection operate by lower arm.
Fault output of OC, SC protection given pulse.
Fault output of OT, UV protection given pulse while over level.
MECHANICAL RATINGS AND CHARACTERISTICS
Limits
Typ.
3.0
Test Condition
Unit
Parameter
Mounting torque
Symbol
Min.
2.5
2.5
—
Max.
3.5
3.5
—
—
—
—
Main terminal
Mounting part
screw : M5
screw : M5
N • m
N • m
g
3.0
560
Mounting torque
Weight
—
RECOMMENDED CONDITIONS FOR USE
Symbol Parameter
Supply Voltage
Test Condition
Recommended value
Unit
V
VCC
Applied across P-N terminals
≤ 400
Applied between : VUP1-VUPC, VVP1-VVPC
VWP1-VWPC, VN1-VNC
VD
Control Supply Voltage
15 1.5
V
V
(Note-4)
Input ON Voltage
Input OFF Voltage
VCIN(ON)
Applied between : UP-VUPC, VP-VVPC, WP-VWPC
UN • VN • WN • Br-VNC
≤ 0.8
≥ 4.0
VCIN(OFF)
Using Application Circuit input signal of IPM, 3φ
sinusoidal PWM VVVF inverter
PWM Input Frequency
fPWM
tdead
≤ 20
kHz
(Fig. 8)
(Fig. 7)
Arm Shoot-through
Blocking Time
µs
For IPM’s each input signals
≥ 2.5
(Note-4) Allowable Ripple rating of Control Voltage : dv/dt ≤ 5V/µs, 2Vp-p
Sep. 2001
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100RSE060
FLAT-BASE TYPE
INSULATED PACKAGE
PRECAUTIONS FOR TESTING
1. Before appling any control supply voltage (VD), the input terminals should be pulled up by resistores, etc. to their corre-
sponding supply voltage and each input signal should be kept off state.
After this, the specified ON and OFF level setting for each input signal should be done.
2. When performing “OC” and “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not
be allowed to rise above VCES rating of the device.
(These test should not be done by using a curve tracer or its equivalent.)
P, (U,V,W,B)
P, (U,V,W)
IN
IN
(Fo)
(Fo)
Ic
–Ic
V
V
V
CIN
(15V)
V
CIN
(0V)
U,V,W, (N)
U,V,W,B, (N)
VD
(all)
VD (all)
Fig. 1 VCE(sat) Test
Fig. 2 VEC, (VFM) Test
a) Lower Arm Switching
P
trr
Irr
VCE
Signal input
(Upper Arm)
V
15V)
CIN
Ic
U,V,W
(
Vcc
C
S
90%
Fo
Signal input
(Lower Arm)
90%
V
CIN
N
P
10%
VD (all)
Ic
10%
10%
10%
b) Upper Arm Switching
tc (on)
tc (off)
Signal input
(Upper Arm)
V
CIN
V
CIN
U,V,W
Vcc
C
S
td (on)
tr
td (off)
tf
Fo
V
CIN
Signal input
(Lower Arm)
(15V)
(ton= td (on) + tr)
(toff= td (off) + tf)
N
Ic
VD (all)
Fig. 3 Switching time Test circuit and waveform
P, (U,V,W,B)
A
V
CIN
IN
(Fo)
Pulse
VCE
V
(15V)
CIN
Over Current
OC
U,V,W, (N)
IC
VD (all)
t
off (OC)
Constant Current
Fig. 4 ICES Test
P, (U,V,W,B)
Short Circuit Current
IN
Constant Current
VCC
(Fo)
SC
V
CIN
IC
U,V,W, (N)
VD
(all)
IC
Fig. 5 OC and SC Test
Fig. 6 OC and SC Test waveform
P
V
D
V
CINP
U,V,W
Vcc
V
D
V
CINN
CINP
N
Ic
V
0V
0V
t
t
VCINN
t
dead
t
dead
t
dead
Fig. 7 Dead time measurement point example
Sep. 2001
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100RSE060
FLAT-BASE TYPE
INSULATED PACKAGE
P
≥10µ
20k
VUP1
Vcc
In
¡
OUT
Si
+
VD
IF
UP
–
U
VUPC
GND GND
≥0.1µ
VVP1
Vcc
OUT
Si
V
D
D
VP
In
V
VVPC
GND GND
M
VWP1
Vcc
OUT
Si
V
WP
In
W
VWPC
GND GND
20k
Vcc
Fo
In
OUT
Si
¡
≥10µ
IF
UN
GND GND
≥0.1µ
N
Th
20k
TEMP
Vcc
¡
OUT
≥10µ
≥10µ
Fo
IF
Si
VN
In
GND GND
≥0.1µ
20k
VN1
WN
Vcc
¡
OUT
Fo
IF
VD
Si
In
GND GND
B
≥0.1µ
VNC
4.7k
Vcc
OUT
Fo
Br
Si
In
GND GND
1k
5V
Rfo
Fo
: Interface which is the same as the U-phase
Fig. 8 Application Example Circuit
NOTES FOR STABLE AND SAFE OPERATION ;
Design the PCB pattern to minimize wiring length between opto-coupler and IPM’s input terminal, and also to minimize the
•
stray capacity between the input and output wirings of opto-coupler.
Quick opto-couplers: TPLH, TPLH ≤ 0.8µs. Use High CMR type. The line between opto-coupler and intelligent module
should be shortened as much as possible to minimize the floating capacitance.
•
Slow switching opto-coupler: recommend to use at CTR = 100 ~ 200%, Input current = 8 ~ 10mA, to work in active.
•
Use 4 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the
•
power supply.
Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N
•
terminal.
Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line
•
and improve noise immunity of the system.
Sep. 2001
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