PM75B4L1C060 [MITSUBISHI]
INTELLIGENT POWER MODULES; 智能功率模块
| 型号： | PM75B4L1C060 |
| 厂家： | 
Mitsubishi Group |
| 描述： | INTELLIGENT POWER MODULES |
| 文件： | 总10页 (文件大小：323K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B4L1C060
FLAT-BASE TYPE
INSULATED PACKAGE
PM75B4L1C060
FEATURE
a) Adopting new 5th generation Full-Gate
TM
CSTBT chip
b) Error output signal is possible from all
each protection upper and lower IGBT
c) The mounting surface is 90mm×50mm
about 30% less than B4LA type
• Monolithic gate drive & protection logic
• Detection, protection & status indication
circuits for, short-circuit, over-temperature
& under-voltage.
APPLICATION
Photo voltaic power conditioner
PACKAGE OUTLINES
Dimensions in mm
Terminal code
15. NC
16. UN
17. VN
18. NC
19. Fo
1. VUPC
2. UFo
3. UP
4. VUP1
5. VVPC
6. VFo
7. VP
8. VVP1
9. NC
10. NC
11. NC
12. NC
13. VNC
14. VN1
Jan. 2011
1
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B4L1C060
FLAT-BASE TYPE
INSULATED PACKAGE
INTERNAL FUNCTIONS BLOCK DIAGRAM
VP
VVPC
VVP1
UP
VUPC UFo
VUP1
VNC
VN1
VN
UN
NC
NC Fo
NC NC NC NC
VFo
1.5k
1.5k
1.5k
GND IN Fo Vcc
GND SC OT OUT
GND IN Fo Vcc
GND SC OT OUT
GND IN Fo Vcc
GND SC OT OUT
GND IN Fo Vcc
GND SC OT OUT
B
N
W
V
U
P
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
VCES
IC
Parameter
Collector-Emitter Voltage
Conditions
Ratings
600
Unit
V
VD=15V, VCIN=15V
TC=25°C
Pulse
75
Collector Current
A
W
A
ICRM
Ptot
150
Total Power Dissipation
Emitter Current
TC=25°C
TC=25°C
Pulse
201
IE
75
IERM
Tj
(Free wheeling Diode Forward current)
Junction Temperature
150
-20 ~ +150
°C
*: Tc measurement point is just under the chip.
CONTROL PART
Symbol
VD
Parameter
Supply Voltage
Conditions
Ratings
20
Unit
V
Applied between : VUP1-VUPC, VVP1-VVPC,VN1-VNC
Applied between : UP-VUPC, VP-VVPC, UN･VN-VNC
Applied between : UFo-VUPC, VFo-VVPC, Fo-VNC
Sink current at UFo, VFo, Fo terminals
VCIN
VFO
IFO
Input Voltage
20
V
Fault Output Supply Voltage
Fault Output Current
20
V
20
mA
Jan. 2011
2
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B4L1C060
FLAT-BASE TYPE
INSULATED PACKAGE
TOTAL SYSTEM
Symbol
Parameter
Conditions
Ratings
450
Unit
V
Supply Voltage Protected by
SC
VD =13.5V ~ 16.5V
VCC(PROT)
Inverter Part, Tj =+125°C Start
Applied between : P-N, Surge value
VCC(surge)
Tstg
Supply Voltage (Surge)
500
-40 ~ +125
2500
V
°C
V
Storage Temperature
Isolation Voltage
60Hz, Sinusoidal, RMS, Charged part to Base, AC 1min.
Visol
*: TC measurement point is just under the chip.
THERMAL RESISTANCE
Limits
Typ.
-
-
Symbol
Parameter
Conditions
Unit
K/W
Min.
-
-
Max.
0.62
1.06
Rth(j-c)Q
Rth(j-c)D
Thermal Resistance
Junction to case, IGBT (per 1 element)
Junction to case, FWDi (per 1 element)
Case to heat sink, (per 1 module)
Thermal grease applied
(Note.1)
(Note.1)
Rth(c-s)
Contact Thermal Resistance
-
0.06
-
(Note.1)
Note.1: If you use this value, Rth(s-a) should be measured just under the chips.
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Limits
Typ.
2.2
2.2
2.4
0.5
0.1
0.15
1.1
0.2
-
Symbol
VCEsat
Parameter
Conditions
Unit
Min.
Max.
2.7
2.7
3.3
1.2
0.2
0.3
2.0
0.4
1
-
Tj=25°C
Collector-Emitter Saturation
Voltage
VD=15V, IC=75A
CIN=0V, Pulsed
V
V
V
(Fig. 1)
-
Tj=125°C
(Fig. 2)
-
VEC
ton
Emitter-Collector Voltage
IE=75A, VD=15V, VCIN= 15V
0.1
VD=15V, VCIN=0V←→15V
-
-
-
-
-
-
trr
V
CC=300V, IC=75A
Switching Time
μs
tc(on)
toff
Tj=125°C
Inductive Load
(Fig. 3,4)
tc(off)
Tj=25°C
Collector-Emitter Cut-off
Current
ICES
V
CE=VCES, VD=15V , VCIN=15V (Fig. 5)
mA
-
10
Tj=125°C
Jan. 2011
3
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B4L1C060
FLAT-BASE TYPE
INSULATED PACKAGE
CONTROL PART
Limits
Symbol
Parameter
Conditions
Unit
mA
V
Min.
-
Typ.
6.5
1.6
1.5
2.0
-
Max.
12
VN1-VNC
*P1-V*PC
UP-VUPC, VP-VVPC, UN･VN-VNC
ID
Circuit Current
VD=15V, VCIN=15V
Applied between :
V
-
4.0
1.8
2.3
-
Vth(ON)
Vth(OFF)
SC
Input ON Threshold Voltage
Input OFF Threshold Voltage
1.2
1.7
112
Short Circuit Trip Level
Short Circuit Current Delay
Time
-20≤Tj≤125°C, VD=15V
(Fig. 3, 6)
(Fig. 3, 6)
A
toff(SC)
VD=15V
-
0.2
-
μs
OT
Trip level
135
-
-
Over Temperature Protection Detect Temperature of IGBT chip
°C
V
OT(hys)
UVt
Hysteresis
Trip level
-
20
-
12.5
-
11.5
12.0
12.5
-
Supply Circuit Under-Voltage
-20≤Tj≤125°C
Protection
UVr
Reset level
-
-
IFO(H)
IFO(L)
tFO
0.01
15
-
Fault Output Current
VD=15V, VFO=15V
VD=15V
(Note.2)
mA
ms
-
10
Fault Output Pulse Width
(Note.2)
1.0
1.8
Note.2: Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to protect it.
MECHANICAL RATINGS AND CHARACTERISTICS
Limits
Symbol
Parameter
Conditions
-
Unit
Min.
1.4
-
Typ.
1.65
135
Max.
1.9
-
Mt
m
Mounting Torque
Weight
Mounting part
screw : M4
N・m
g
RECOMMENDED CONDITIONS FOR USE
Symbol
VCC
Parameter
Supply Voltage
Conditions
Recommended value
Unit
V
Applied across P-N terminals
Applied between : VUP1-VUPC
VP1-VVPC,VN1-VNC
UP-VUPC, VP-VVPC, UN･VN-VNC
≤ 450
,
VD
Control Supply Voltage
15.0±1.5
V
V
V
(Note.3)
VCIN(ON)
VCIN(OFF)
fPWM
Input ON Voltage
Input OFF Voltage
≤ 0.8
≥ 9.0
≤ 20
Applied between :
PWM Input Frequency
Arm Shoot-through Blocking
Time
Using Application Circuit of Fig. 8
For IPM’s each input signals
kHz
μs
A
(Fig. 7)
tdead
≥ 2.0
≤ 30
IO
Module Operating Current
RMS
Note.3: With ripple satisfying the following conditions: dv/dt swing ≤ ±5V/μs, Variation ≤ 2V peak to peak
Jan. 2011
4
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B4L1C060
FLAT-BASE TYPE
INSULATED PACKAGE
PRECAUTIONS FOR TESTING
1. Before applying any control supply voltage (VD), the input terminals should be pulled up by resistors, etc. to their
corresponding supply voltage and each input signal should be kept off state.
After this, the specified ON and OFF level setting for each input signal should be done.
2. When performing “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be
allowed to rise above VCES rating of the device.
(These test should not be done by using a curve tracer or its equivalent.)
P,(U,V)
V
P,(U,V)
V
Vcc
Vcc
Fo
Fo
IN
Fo
VD(all)
Fo
VD(all)
IE
Ic
Vcin IN
Vcin
GND
GND
U,V,(N)
Fig. 1 VCEsat Test
U,V,(N)
Fig. 2 VEC Test
P
P
Vcc
Vcc
Fo
Fo
Fo
VD(all)
VD(all)
Fo
IN
IN
Vcin
Vcin
GND
GND
U,V
Vcc
Vcc
U,V
Vcc
Fo
Vcc
Fo
Fo
VD(all)
VD(all)
Fo
IN
IN
Vcin
Vcin
GND
GND
N
N
Ic
Ic
Fig. 3 Switching time and SC test circuit
Fig. 4 Switching time test waveform
P,(U,V)
A
Vcc
Fo
Fo
VCE
VD(all)
pulse
IN
Vcin
GND
U,V,(N)
Fig. 5 ICES Test
Fig. 6 SC test waveform
Fig. 7 Dead time measurement point example
5
Jan. 2011
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B4L1C060
FLAT-BASE TYPE
INSULATED PACKAGE
P
20k
VUP1
OUT
Vcc
1.5k
U
U
Fo
P
OT
SC
VD1
Fo
IN
≥0.1µ
≥10µ
≥10µ
U
VUPC
GND GND
20k
VVP1
OUT
Vcc
1.5k
V
Fo
P
OT
SC
VD2
Fo
IN
AC Output
V
≥0.1µ
V
VVPC
NC
GND GND
NC
NC
NC
20k
OUT
Vcc
OT
SC
Fo
IN
U
N
≥0.1µ
≥10µ
≥10µ
N
GND GND
20k
OUT
Vcc
OT
SC
Fo
IN
V
N
≥0.1µ
GND GND
VN1
VD3
NC
VNC
B
1.5k
Fo
NC
Fig. 8 Application Example Circuit
NOTES FOR STABLE AND SAFE OPERATION ;
• Design the PCB pattern to minimize wiring length between opto-coupler and IPM’s input terminal, and also to minimize the
stray capacity between the input and output wirings of opto-coupler.
• Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler.
• Fast switching opto-couplers: tPLH, tPHL ≤ 0.8μs, Use High CMR type.
• Slow switching opto-coupler: CTR > 100%
• Use 3 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the
power supply.
• Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N
terminal.
Jan. 2011
6
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B4L1C060
FLAT-BASE TYPE
INSULATED PACKAGE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. Ic) CHARACTERISTICS
(TYPICAL)
(TYPICAL)
INVERTER PART
INVERTER PART
80
70
60
50
40
30
20
10
0
2.5
2.0
1.5
1.0
0.5
0.0
0.5
1.0
1.5
2.0
2.5
0
10
20
30
40
50
60
70
80
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. VD) CHARACTERISTICS
(TYPICAL)
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
INVERTER PART
INVERTER PART
Jan. 2011
7
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B4L1C060
FLAT-BASE TYPE
INSULATED PACKAGE
SWITCHING TIME (ton, toff) CHARACTERISTICS
(TYPICAL)
SWITCHING TIME (tc(on), tc(off)) CHARACTERISTICS
(TYPICAL)
INVERTER PART
INVERTER PART
10
1
Vcc=300V
VD=15V
tc(off)
Tj=25°C
Tj=125°C
Inductive Load
tc(on)
toff
1
0.1
Vcc=300V
VD=15V
Tj=25°C
ton
Tj=125°C
Inductive Load
0.1
0.01
1
10
100
1
10
100
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)
FREE WHEELING DIODE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
INVERTER PART
INVERTER PART
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.20
80
Vcc=300V
VD=15V
Vcc=300V
VD=15V
0.18
0.16
0.14
0.12
0.10
0.08
0.06
70
60
50
40
30
20
10
Tj=25°C
Tj=25°C
Eoff
Irr
Tj=125°C
Tj=125°C
Inductive Load
Inductive Load
trr
Eon
0
20
40
60
80
0
20
40
60
80
COLLECTOR CURRENT IC (A)
EMITTER CURRENT IE (A)
Jan. 2011
8
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B4L1C060
FLAT-BASE TYPE
INSULATED PACKAGE
FREE WHEELING DIODE
REVERSE RECOVERY ENERGY CHARACTERISTICS
(TYPICAL)
ID VS. fc CHARACTERISTICS
(TYPICAL)
INVERTER PART
30
1.4
Vcc=300V
VD=15V
1.2
VD=15V
25
20
15
10
5
Tj=25°C
Tj=25°C
Tj=125°C
1.0
0.8
0.6
0.4
0.2
0.0
Tj=125°C
Inductive Load
N side
P side
0
0
20
40
60
80
0
5
10
15
20
25
EMITTER CURRENT IE (A)
fc (kHz)
UV TRIP LEVEL VS. Tj CHARACTERISTICS
(TYPICAL)
SC TRIP LEVEL VS. Tj CHARACTERISTICS
(TYPICAL)
INVERTER PART
20
18
16
14
12
10
8
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
UVt
UVr
VD=15V
6
4
2
0
-50
0
50
100
150
-50
0
50
100
150
Tj (°C)
Tj (°C)
Jan. 2011
9
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B4L1C060
FLAT-BASE TYPE
INSULATED PACKAGE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
INVERTER PART
1
0.1
Single Pulse
0.01
IGBT Part;
Per unit base: Rth(j-c)Q=0.62 K/W
FWDi Part;
Per unit base: Rth(j-c)D=1.06K/W
0.001
0.00001 0.0001
0.001
0.01
0.1
1
10
TIME t (sec)
Jan. 2011
10
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