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QM150DY-HK [MITSUBISHI]

HIGH POWER SWITCHING USE INSULATED TYPE; 大功率开关使用绝缘型
QM150DY-HK
型号： QM150DY-HK
厂家： Mitsubishi Group    Mitsubishi Group
描述：

HIGH POWER SWITCHING USE INSULATED TYPE
大功率开关使用绝缘型

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MITSUBISHI TRANSISTOR MODULES  
QM150DY-HK  
HIGH POWER SWITCHING USE  
INSULATED TYPE  
QM150DY-HK  
• IC  
Collector current ........................ 150A  
• VCEX Collector-emitter voltage ........... 600V  
• hFE DC current gain...............................75  
• Insulated Type  
• UL Recognized  
Yellow Card No. E80276 (N)  
File No. E80271  
APPLICATION  
Inverters, Servo drives, DC motor controllers, NC equipment, Welders  
OUTLINE DRAWING & CIRCUIT DIAGRAM  
Dimensions in mm  
94  
1.3  
23  
23  
17.5  
4–φ5.5  
18.8  
E2  
C1  
C2E1  
80 0.25  
(12)  
9.5 20.5  
(12)  
(12)  
Tab#110, t=0.5  
3–M5  
B2X  
B2  
E2  
LABEL  
C1  
C2E1  
E2  
E1  
B1  
B1X  
Feb.1999  
MITSUBISHI TRANSISTOR MODULES  
QM150DY-HK  
HIGH POWER SWITCHING USE  
INSULATED TYPE  
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)  
Symbol  
VCEX (SUS)  
VCEX  
VCBO  
VEBO  
IC  
Parameter  
Collector-emitter voltage  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
Conditions  
Ratings  
600  
600  
600  
7
Unit  
V
IC=1A, VEB=2V  
VEB=2V  
V
Emitter open  
Collector open  
DC  
V
V
150  
150  
690  
9
A
–IC  
Collector reverse current  
Collector dissipation  
Base current  
DC (forward diode current)  
TC=25°C  
A
PC  
W
A
IB  
DC  
Surge collector reverse current  
(forward diode current)  
–ICSM  
Peak value of one cycle of 60Hz (half wave)  
1500  
A
Tj  
Junction temperature  
Storage temperature  
Isolation voltage  
–40~+150  
–40~+125  
2500  
°C  
°C  
Tstg  
Viso  
Charged part to case, AC for 1 minute  
Main terminal screw M5  
V
1.47~1.96  
15~20  
N·m  
kg·cm  
N·m  
kg·cm  
g
—
—
Mounting torque  
Weight  
1.47~1.96  
15~20  
Mounting screw M5  
Typical value  
420  
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)  
Limits  
Typ.  
—
Symbol  
ICEX  
Parameter  
Test conditions  
Unit  
Min.  
—
Max.  
2.0  
2.0  
150  
2.0  
2.5  
1.85  
—
Collector cutoff current  
VCE=600V, VEB=2V  
VCB=600V, Emitter open  
VEB=7V  
mA  
mA  
mA  
V
—
—
ICBO  
Collector cutoff current  
—
—
IEBO  
Emitter cutoff current  
—
—
VCE (sat)  
VBE (sat)  
–VCEO  
hFE  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Collector-emitter reverse voltage  
DC current gain  
IC=150A, IB=2A  
—
—
V
—
—
–IC=150A (diode forward voltage )  
IC=150A, VCE=2V/5V  
V
75/100  
—
—
—
—
2.5  
12  
ton  
µs  
—
—
ts  
Switching time  
VCC=300V, IC=150A, IB1=–IB2=3A  
µs  
—
—
3.0  
0.18  
0.6  
tf  
µs  
—
—
Rth (j-c) Q  
Rth (j-c) R  
Transistor part (per 1/2 module)  
Diode part (per 1/2 module)  
°C/W  
°C/W  
Thermal resistance  
(junction to case)  
—
—
Contact thermal resistance  
(case to fin)  
—
—
0.1  
Rth (c-f)  
Conductive grease applied (per 1/2 module)  
°C/W  
Feb.1999  
MITSUBISHI TRANSISTOR MODULES  
QM150DY-HK  
HIGH POWER SWITCHING USE  
INSULATED TYPE  
PERFORMANCE CURVES  
COMMON EMITTER OUTPUT  
CHARACTERISTICS (TYPICAL)  
DC CURRENT GAIN VS.  
COLLECTOR CURRENT (TYPICAL)  
103  
7
300  
240  
180  
120  
60  
V
CE=5.0V  
T
j=25°C  
5
I
I
B
B
=3.0A  
=2.0A  
3
2
V
CE=2.0V  
102  
7
I
I
B
B
=1.0A  
=0.5A  
5
3
2
101  
7
5
T
T
j
j
=25°C  
=125°C  
I
B
=0.1A  
3
2
100  
0
0
1
2
3
4
5
100  
101  
102  
103  
2 3 45 7  
2 3 45 7  
2 3 45 7  
COLLECTOR-EMITTER VOLTAGE VCE (V)  
COLLECTOR CURRENT IC (A)  
COMMON EMITTER INPUT  
CHARACTERISTIC (TYPICAL)  
SATURATION VOLTAGE  
CHARACTERISTICS (TYPICAL)  
101  
7
101  
7
5
5
4
4
3
2
3
2
V
BE(sat)  
CE(sat)  
V
CE=2.0V  
T
j=25°C  
100  
7
100  
7
V
5
5
4
4
IB=2A  
T
j
j
=25°C  
=125°C  
3
2
3
2
T
10–1  
10–1  
3 4 5 7 101  
COLLECTOR CURRENT IC (A)  
2
3 4 5 7 102  
2
1.0  
1.4  
1.8  
2.2  
2.6  
3.0  
2
BASE-EMITTER VOLTAGE VBE (V)  
COLLECTOR-EMITTER SATURATION  
VOLTAGE (TYPICAL)  
SWITCHING TIME VS. COLLECTOR  
CURRENT (TYPICAL)  
102  
7
5
4
3
2
V
CC=300V  
T
T
j
j
=25°C  
5
I
B1=–IB2=3A  
=125°C  
3
2
T
T
j
j
=25°C  
=125°C  
t
s
101  
7
5
3
2
100  
7
5
t
on  
IC  
=200A  
t
f
1
0
I
C
=150A  
3
IC=100A  
2
IC=50A  
10 –1  
10 –1 2 3 45 7100 2 3 45 7 101 2 3 45 7 102  
100 2 3 45 7101 2 3 45 7 102 2 3 45 7 103  
BASE CURRENT IB (A)  
COLLECTOR CURRENT IC (A)  
Feb.1999  
MITSUBISHI TRANSISTOR MODULES  
QM150DY-HK  
HIGH POWER SWITCHING USE  
INSULATED TYPE  
SWITCHING TIME VS. BASE  
CURRENT (TYPICAL)  
REVERSE BIAS SAFE OPERATING AREA  
2
400  
300  
200  
100  
0
Tj=125°C  
101  
7
t
s
5
4
I
B2=–2A  
B2=–5A  
3
2
I
V
CC=300V  
tf  
I
I
C=150A  
100  
7
B1=3A  
5
4
T
T
j
=25°C  
=125°C  
3
2
j
10 –1  
2
3 4 5 7 100  
2
3 4 5 7 101  
0
200  
400  
600  
800  
BASE REVERSE CURRENT –IB2 (A)  
COLLECTOR-EMITTER VOLTAGE VCE (V)  
FORWARD BIAS SAFE OPERATING AREA  
DERATING FACTOR OF F. B. S. O. A.  
103  
100  
SECOND  
BREAKDOWN  
AREA  
t
w
100µ  
=50µ  
S
7
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
5
3
2
S
102  
7
5
COLLECTOR  
DISSIPATION  
3
2
101  
7
5
3
2
T
C
=25°C  
NON–REPETITIVE  
100  
100 2 345 7 101 2 3 45 7 102 2 345 7 103  
0
20 40 60 80 100 120 140 160  
COLLECTOR-EMITTER VOLTAGE VCE (V)  
CASE TEMPERATURE TC (°C)  
REVERSE COLLECTOR CURRENT VS.  
COLLECTOR-EMITTER REVERSE  
VOLTAGE (DIODE FORWARD  
TRANSIENT THERMAL IMPEDANCE  
CHARACTERISTIC (TRANSISTOR)  
2 3 45 7  
100  
101  
2 3 4  
CHARACTERISTICS) (TYPICAL)  
103  
7
0.20  
5
3
2
0.16  
0.12  
0.08  
102  
7
5
3
2
101  
7
5
3
2
100  
0.04  
0
T
j
j
=25°C  
=125°C  
T
10 –3 2 3 45 710 –2 2 3 45 710 –12 3 45 7 100  
0
0.4  
0.8  
1.2  
1.6  
2.0  
TIME (s)  
COLLECTOR-EMITTER REVERSE VOLTAGE  
–VCEO (V)  
Feb.1999  
MITSUBISHI TRANSISTOR MODULES  
QM150DY-HK  
HIGH POWER SWITCHING USE  
INSULATED TYPE  
RATED SURGE COLLECTOR REVERSE CURRENT  
(DIODE FORWARD SURGE CURRENT)  
REVERSE RECOVERY CHARACTERISTICS  
OF FREE-WHEEL DIODE (TYPICAL)  
103  
102  
1600  
1400  
1200  
1000  
800  
600  
400  
200  
0
7
5
VCC=300V  
IB1=–IB2=3A  
Tj=25°C  
3
2
Tj=125°C  
102  
7
101  
5
3
2
Qrr  
101  
7
5
100  
Irr  
3
trr  
2
100  
10 –1  
100  
100 2 3 45 7101 2 3 45 7 102 2 3 45 7 103  
2
3 4 5 7 101  
2
3 4 5 7 102  
CONDUCTION TIME (CYCLES AT 60Hz)  
FORWARD CURRENT IF (A)  
TRANSIENT THERMAL IMPEDANCE  
CHARACTERISTIC (DIODE)  
100  
101  
2 3 45  
2 3 457  
1.0  
0.8  
0.6  
0.4  
0.2  
0
10 –3 2 3 45 710 –2 2 3 45 710 –12 3 45 7 100  
TIME (s)  
Feb.1999  

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