QM150HY-2H [MITSUBISHI]
HIGH POWER SWITCHING USE INSULATED TYPE; 大功率开关使用绝缘型
| 型号： | QM150HY-2H |
| 厂家： | 
Mitsubishi Group |
| 描述： | HIGH POWER SWITCHING USE INSULATED TYPE |
| 文件： | 总5页 (文件大小：73K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI TRANSISTOR MODULES
QM150HY-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
QM150HY-2H
• IC
Collector current ........................ 150A
• VCEX Collector-emitter voltage ......... 1000V
• hFE DC current gain...............................75
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
Inverters, Servo drives, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
108
(7.5)
(7.5)
93
C
C
E
12
46.5
B
1
E
1
B1
C1
C1
E1
5
23
8
23
8
φ6.5
E
1
Tab#110, t=0.5
15
M5
LABEL
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM150HY-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
VCEX (SUS)
VCEX
VCBO
VEBO
IC
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Conditions
Ratings
1000
1000
1000
7
Unit
V
IC=1A, VEB=2V
VEB=2V
V
Emitter open
Collector open
DC
V
V
150
A
–IC
Collector reverse current
Collector dissipation
Base current
DC (forward diode current)
TC=25°C
150
A
PC
1000
8
W
A
IB
DC
Surge collector reverse current
(forward diode current)
–ICSM
Peak value of one cycle of 60Hz (half wave)
1500
A
Tj
Junction temperature
Storage temperature
Isolation voltage
–40~+150
–40~+125
2500
°C
°C
Tstg
Viso
Charged part to case, AC for 1 minute
Main terminal screw M5
V
1.47~1.96
15~20
N·m
kg·cm
N·m
kg·cm
g
—
—
Mounting torque
Weight
1.96~2.94
20~30
Mounting screw M6
Typical value
250
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Limits
Typ.
—
Symbol
ICEX
Parameter
Test conditions
Unit
Min.
—
Max.
2.0
2.0
200
2.5
3.5
1.8
—
Collector cutoff current
VCE=1000V, VEB=2V
mA
mA
mA
V
—
—
ICBO
Collector cutoff current
VCB=1000V, Emitter open
VEB=7V
—
—
IEBO
Emitter cutoff current
—
—
VCE (sat)
VBE (sat)
–VCEO
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
IC=150A, IB=3A
—
—
V
—
—
–IC=150A (diode forward voltage)
IC=150A, VCE=2.8V/5V
V
75/100
—
—
—
—
3.0
15
ton
µs
—
—
ts
Switching time
VCC=600V, IC=150A, IB1=–IB2=3A
µs
—
—
3.0
0.125
0.6
tf
µs
—
—
Rth (j-c) Q
Rth (j-c) R
Transistor part
Diode part
°C/W
°C/W
Thermal resistance
(junction to case)
—
—
Contact thermal resistance
(case to fin)
—
—
0.065
Rth (c-f)
Conductive grease applied
°C/W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM150HY-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
104
7
200
160
120
80
I
I
I
B
B
B
=1.5A
=0.8A
=0.4A
Tj=25°C
T
T
j
=25°C
5
j=125°C
3
2
103
VCE=5.0V
7
5
3
2
102
7
5
I
I
B
=0.2A
=0.1A
V
CE=2.8V
B
40
3
2
101
0
100 2 3 45 7101 2 345 7 102 2 3 45 7 103
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
101
101
7
7
V
CE=2.8V
5
5
T
j=25°C
4
4
3
2
3
2
VBE(sat)
100
7
100
7
VCE(sat)
5
5
4
4
3
2
3
2
IB=3A
Tj
=25°C
T
j
=125°C
10–1
10–1
3 4 5 7 101
2
3 4 5 7 102
2
3
1.8
2.2
2.6
3.0
3.4
3.8
BASE-EMITTER VOLTAGE VBE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
102
7
5
4
V
CC=600V
B1=–IB2=3A
=25°C
=125°C
Tj=25°C
Tj=125°C
5
I
T
j
3
2
ts
T
j
101
7
3
2
5
3
2
100
7
5
tf
IC=200A
ton
1
0
3
IC=150A
IC=100A
2
IC=50A
10 –1
10 –2 2 3 45710 –1 2 345 7 0 2 345 7
10
2 3 45 7
1 2 3 457 2 2 3 457
10 10
1
3
10
100
10
BASE CURRENT IB (A)
COLLECTOR CURRENT IC (A)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM150HY-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
102
7
320
VCC=600V
Tj=25°C
Tj=125°C
IB1=3A
280
240
200
160
120
80
5
IC=150A
IB2=–2A
4
3
2
ts
IB2=–5A
101
7
5
4
tf
3
2
40
Tj=125°C
200
100
0
10–1
2
3 4 5 7 100
2
3 4 5 7 101
0
400
600
800
1000
BASE REVERSE CURRENT –IB2 (A)
COLLECTOR-EMITTER VOLTAGE VCE (V)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
103
100
tw=50µS
100µS
7
5
SECOND
BREAKDOWN
AREA
90
80
70
60
50
3
2
102
7
5
COLLECTOR
DISSIPATION
3
2
101
7
5
40
30
20
10
0
3
2
TC=25°C
NON–REPETITIVE
100
100 2 345 7 101 2 3 45 7 102 2 345 7 103
0
20 40 60 80 100 120 140 160
COLLECTOR-EMITTER VOLTAGE VCE (V)
CASE TEMPERATURE TC (°C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
100 2 355 7101 2 3
CHARACTERISTICS) (TYPICAL)
103
7
0.16
5
0.14
0.12
0.10
0.08
0.06
0.04
3
2
102
7
5
3
2
101
7
5
3
0.02
0
Tj=25°C
Tj=125°C
2
100
0
2 3 45 7 –2 2 3 45 7 –12 3 45 7
10 10
10
10 –3
0
0.4
0.8
1.2
1.6
2.0
TIME (s)
COLLECTOR-EMITTER REVERSE VOLTAGE
–VCEO (V)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM150HY-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
103
102
1600
1400
VCC=600V
IB1=–IB2=3A
Tj=25°C
7
5
3
2
Irr
Tj=125°C
1200
1000
102
101
Qrr
7
5
800
600
400
200
0
3
2
101
7
5
100
trr
3
2
10 –1
100
2
3 4 5 7 101
2
3 4 5 7 102
100
100
101
102
103
2 3 45 7
2 3 4 5 7
2 3 45 7
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT IF (A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
100 2 3 45 7101 2 3 45
1.0
0.8
0.6
0.4
0.2
0
10 –3
10 –2
2 3 45 7
10 –1
2 3 45 7
100
2 3 45 7
TIME (s)
Feb.1999
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