QM150HY-H [MITSUBISHI]
HIGH POWER SWITCHING USE INSULATED TYPE; 大功率开关使用绝缘型
| 型号： | QM150HY-H |
| 厂家： | 
Mitsubishi Group |
| 描述： | HIGH POWER SWITCHING USE INSULATED TYPE |
| 文件： | 总5页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI TRANSISTOR MODULES
QM150HY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
QM150HY-H
• IC
Collector current ........................ 150A
• VCEX Collector-emitter voltage ........... 600V
• hFE DC current gain...............................75
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
Inverters, Servo drives, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
94
(7)
(7)
80
27
20
20
φ6.5
C
C
E
E
1
C
C
B1
E
E
1
B1
Tab#110,
t=0.5
M5
LABEL
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM150HY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
VCEX (SUS)
VCEX
VCBO
VEBO
IC
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Conditions
Ratings
600
600
600
7
Unit
V
IC=1A, VEB=2V
VEB=2V
V
Emitter open
Collector open
DC
V
V
150
150
690
9
A
–IC
Collector reverse current
Collector dissipation
Base current
DC (forward diode current)
TC=25°C
A
PC
W
A
IB
DC
Surge collector reverse current
(forward diode current)
–ICSM
Peak value of one cycle of 60Hz (half wave)
1500
A
Tj
Junction temperature
Storage temperature
Isolation voltage
–40~+150
–40~+125
2500
°C
°C
Tstg
Viso
Charged part to case, AC for 1 minute
Main terminal screw M5
V
1.47~1.96
15~20
N·m
kg·cm
N·m
kg·cm
g
—
—
Mounting torque
Weight
1.96~2.94
20~30
Mounting screw M6
Typical value
210
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Limits
Typ.
—
Symbol
ICEX
Parameter
Test conditions
Unit
Min.
—
Max.
2.0
2.0
150
2.0
2.5
1.8
—
Collector cutoff current
VCE=600V, VEB=2V
VCB=600V, Emitter open
VEB=7V
mA
mA
mA
V
—
—
ICBO
Collector cutoff current
—
—
IEBO
Emitter cutoff current
—
—
VCE (sat)
VBE (sat)
–VCEO
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
IC=150A, IB=2A
—
—
V
—
—
–IC=150A (diode forward voltage)
IC=150A, VCE=2V/5V
V
75/100
—
—
—
—
2.5
12
ton
µs
—
—
ts
Switching time
VCC=600V, IC=150A, IB1=–IB2=3A
µs
—
—
3.0
0.18
0.6
tf
µs
—
—
Rth (j-c) Q
Rth (j-c) R
Transistor part
Diode part
°C/W
°C/W
Thermal resistance
(junction to case)
—
—
Contact thermal resistance
(case to fin)
—
—
0.075
Rth (c-f)
Conductive grease applied
°C/W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM150HY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
103
7
300
240
180
120
60
Tj
=25°C
V
CE=5.0V
5
I
I
B
=3.0A
=2.0A
3
2
B
V
CE=2.0V
102
7
I
I
B
=1.0A
=0.5A
5
3
2
101
7
5
B
I
B=0.1A
3
T
j
=25°C
=125°C
101
2
T
j
100
0
100
102
103
2 3 45 7
0
1
2
3
4
5
2 3 457
2 3 45 7
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
101
7
101
7
V
CE=2.0V
T
j=25°C
5
5
4
4
3
2
3
2
V
BE(sat)
100
7
100
7
V
CE(sat)
IB=2A
5
5
4
4
3
2
3
2
T
T
j
=25°C
j=125°C
10–1
10–1
2
3 4 5 7 102 103
1.0
1.4
1.8
2.2
2.6
3.0
2
3 4 5 7 101
BASE-EMITTER VOLTAGE VBE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
102
7
5
4
T
T
j
j
=25°C
=125°C
V
CC=300V
B1=–IB2=3A
=25°C
=125°C
5
I
T
j
3
2
Tj
t
s
101
7
3
2
5
3
2
100
7
5
ton
I
C=200A
1
0
tf
I
C=150A
3
IC=100A
2
IC=50A
10 –1
100
100
101
101
102
103
2 3 457
10 –2 2 3 45 710 –12 345 7
2 345 7
2 3 45 7
2 3 457
BASE CURRENT IB (A)
COLLECTOR CURRENT IC (A)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM150HY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
2
400
Tj=125°C
101
7
ts
300
200
100
0
5
IB2=–2A
IB2=–5A
4
3
2
VCC=300V
IB1=3A
tf
IC=150A
100
7
5
4
Tj=25°C
Tj=125°C
3
2
10–1
2
3 4 5 7 100
2
3 4 5 7 101
0
200
400
600
800
BASE REVERSE CURRENT –IB2 (A)
COLLECTOR-EMITTER VOLTAGE VCE (V)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
103
100
tw=50µS
100µS
7
5
SECOND
BREAKDOWN
AREA
90
80
70
60
50
3
2
102
7
5
COLLECTOR
DISSIPATION
3
2
101
7
5
40
30
20
10
0
3
TC=25°C
NON–REPETITIVE
2
100
100
101
102 103
2 345 7
0
20 40 60 80 100 120 140 160
2 345 7
2 3 45 7
COLLECTOR-EMITTER VOLTAGE VCE (V)
CASE TEMPERATURE TC (°C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
101
100
CHARACTERISTICS) (TYPICAL)
2 3 45 7
2 3
103
7
0.2
5
3
2
0.16
102
7
0.12
0.08
5
3
2
101
7
5
3
2
100
0.04
0
Tj=25°C
Tj=125°C
10 –3
10 –2
10 –1 100
2 3 4 5 7
0
0.4
0.8
1.2
1.6
2.0
2 3 45 7
2 3 4 5 7
TIME (s)
COLLECTOR-EMITTER REVERSE VOLTAGE
–VCEO (V)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM150HY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
101
101
1600
1400
1200
1000
800
600
400
200
0
Irr
7
5
Qrr
4
3
2
100
100
7
trr
5
4
VCC=300V
IB1=–IB2=3A
3
2
Tj=25°C
Tj=125°C
10 –1
10 –1
100
101
2
3 4 5 7 102
2
3 4 5 7 103
2
3 4 5 7 101
2
3 4 5 7 102
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT IF (A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
100 2 3 45 7101 2 3 457
1.0
0.8
0.6
0.4
0.2
0
10 –3 2 3 5 710 –2 2 3 5 710 –12 3 5 7 100
TIME (s)
Feb.1999
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