QM75E2Y-H [MITSUBISHI]
HIGH POWER SWITCHING USE INSULATED TYPE; 大功率开关使用绝缘型
| 型号： | QM75E2Y-H |
| 厂家： | 
Mitsubishi Group |
| 描述： | HIGH POWER SWITCHING USE INSULATED TYPE |
| 文件： | 总6页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI TRANSISTOR MODULES
QM75E2Y/E3Y-H
HIGH POWER SWITCHING USE
INSULATED TYPE
QM75E2Y/E3Y-H
• IC
Collector current .......................... 75A
• VCEX Collector-emitter voltage ........... 600V
• hFE DC current gain...............................75
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
DC chopper, DC motor controllers, Inverters
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
94
(E2Y)
(7)
(7)
80
E
1
A1
C1
20
20
27
D2
D1
φ6.5
E
1
B1
12
B1
E1
Tab#110,
t=0.5
M5
(E3Y)
D2
D1
LABEL
K1
C1
E1
E1
B1
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM75E2Y/E3Y-H
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Transistor part including D1, Tj=25°C)
Symbol
VCEX (SUS)
VCEX
VCBO
VEBO
IC
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Conditions
Ratings
600
600
600
7
Unit
V
IC=1A, VEB=2V
VEB=2V
V
Emitter open
Collector open
DC
V
V
75
A
–IC
Collector reverse current
Collector dissipation
Base current
DC (forward diode current)
TC=25°C
75
A
PC
350
4.5
W
A
IB
DC
Surge collector reverse current
(forward diode current)
–ICSM
Peak value of one cycle of 60Hz (half wave)
750
A
ABSOLUTE MAXIMUM RATINGS (Diode part (D2), Tj=25°C)
Symbol
VRRM
Parameter
Conditions
Ratings
600
Unit
V
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
VRSM
VR (DC)
IDC
720
V
480
V
DC current
DC circuit, resistive, inductive load
Peak value of one cycle of 60Hz (half wave)
Value for one cycle of surge current
75
A
IFSM
Surge (non-repetitive) forward current
1500
9.45 × 10
A
2
2
3
2
I t
I t for fusing
A s
ABSOLUTE MAXIMUM RATINGS (Common)
Symbol
Parameter
Junction temperature
Storage temperature
Isolation voltage
Conditions
Ratings
Unit
°C
Tj
–40~150
–40~125
2500
Tstg
Viso
°C
Charged part to case, AC for 1 minute
Main terminal screw M5
V
1.47~1.96
15~20
N·m
kg·cm
N·m
kg·cm
g
—
—
Mounting torque
Weight
1.96~2.94
20~30
Mounting screw M6
Typical value
210
ELECTRICAL CHARACTERISTICS (Transistor part including D1, Tj=25°C)
Limits
Typ.
—
Symbol
ICEX
Parameter
Test conditions
Unit
Min.
—
Max.
1.0
1.0
200
2.0
2.5
1.85
—
Collector cutoff current
VCE=600V, VEB=2V
VCB=600V, Emitter open
VEB=7V
mA
mA
mA
V
—
—
ICBO
Collector cutoff current
—
—
IEBO
Emitter cutoff current
—
—
VCE (sat)
VBE (sat)
–VCEO
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
IC=75A, IB=1A
—
—
V
—
—
–IC=75A (diode forward voltage)
IC=75A, VCE=2V/5V
V
75/100
—
—
—
—
2.5
12
ton
µs
—
—
ts
Switching time
VCC=300V, IC=75A, IB1=–IB2=1.5A
µs
—
—
3.0
0.35
1.3
tf
µs
—
—
Rth (j-c) Q
Rth (j-c) R
Transistor part
Diode part
°C/W
°C/W
Thermal resistance
(junction to case)
—
—
Contact thermal resistance
(case to fin)
—
—
0.15
Rth (c-f)
Conductive grease applied
°C/W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM75E2Y/E3Y-H
HIGH POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS (Diode part (D2), Tj=25°C)
Limits
Unit
Symbol
IRRM
Parameter
Test conditions
Min.
—
Typ.
—
Max.
1.0
Repetitive peak reverse current
Forward voltage
VR=VRRM, Tj=150°C
mA
V
VFM
trr
IF=75A
—
—
1.5
Reverse recovery time
Reverse recovery charge
Thermal resistance
—
—
0.9
µs
IF=75A, di/dt=–150A/µs, VR=300V, Tj=150°C
Qrr
—
—
30
µC
Rth (j-c)
Rth (c-f)
Junction to case
—
—
0.6
°C/W
°C/W
Contact thermal resistance
Conductive grease applied (case to fin)
—
—
0.15
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
200
160
120
80
2
VCE=5.0V
103
7
5
IB=1.5A
IB=2.0A
4
3
2
IB=1.0A
VCE=2.0V
IB=0.5A
102
7
40
5
4
Tj=25°C
3
2
Tj=25°C
4 5
Tj=125°C
0
100
2
3 4 5 7 101
2
3 4 5 7 102
0
1
2
3
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
101
7
101
7
5
5
4
4
3
2
3
2
VBE(sat)
VCE(sat)
100
7
100
7
5
5
4
4
3
2
3
2
IB=1A
VCE=2.0V
Tj=25°C
Tj=25°C
Tj=125°C
10 –1
10–1
101
2
3 4 5 7 102
2
3 4 5 7 103
1.0
1.4
1.8
2.2
2.6
3.0
BASE-EMITTER VOLTAGE VBE (V)
COLLECTOR CURRENT IC (A)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM75E2Y/E3Y-H
HIGH POWER SWITCHING USE
INSULATED TYPE
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
2
5
4
3
2
t
s
101
7
V
CC=300V
5
IC=100A
I
B1=–IB2=1.5A
4
T
T
j
j
=25°C
=125°C
3
2
IC=30A
100
7
tf
1
0
5
4
I
C
=75A
T
j
j
=25°C
t
on
3
2
T
=125°C
IC=50A
10 –2 2 3 45 710 –1 2 3 45 7 100 2 3 45 7 101
100
2
3 4 5 7 101
2
3 4 5 7 102
BASE CURRENT IB (A)
COLLECTOR CURRENT IC (A)
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
2
160
120
80
40
0
101
7
I
B2=–2A
t
s
–5A
5
4
3
2
t
f
100
7
V
CC=300V
I
I
B1=1.5A
5
C
=75A
4
T
T
j
=25°C
=125°C
3
2
j
T
j
=125°C
200
10 –1
2
3 4 5 7 100
2
3 4 5 7 101
0
400
600
800
BASE REVERSE CURRENT –IB2 (A)
COLLECTOR-EMITTER VOLTAGE VCE (V)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
103
100
7
5
SECOND BREAK-
DOWN AREA
90
80
70
60
50
40
30
20
10
0
3
tw=50µs
100µs
2
102
7
5
COLLECTOR
DISSIPATION
3
2
101
7
5
3
NON-REPETITIVE
=25°C
2
T
C
100
100
101
102
103
2 345 7
0
20 40 60 80 100 120 140 160
2 345 7
2 345 7
COLLECTOR-EMITTER VOLTAGE VCE (V)
CASE TEMPERATURE TC (°C)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM75E2Y/E3Y-H
HIGH POWER SWITCHING USE
INSULATED TYPE
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
100
101
2 3 45 7
0.5
0.4
0.3
0.2
0.1
0
10 –3
10 –2
10 –1
100
2 3 45 7
2 3 45 7
2 3 45 7
TIME (s)
PERFORMANCE CURVES (Diode part (D1))
FORWARD CHARACTERISTICS
(TYPICAL)
MAXIMUM SURGE CURRENT
102
7
800
700
600
500
400
300
200
100
0
5
4
3
2
101
7
5
4
3
2
T
T
j
j
=25°C
=125°C
100
3 4 5 7 101
2
3 4 5 7 102
0
0.4
0.8
1.2
1.6
2.0
100
2
FORWARD VOLTAGE VF (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC
100
101
2 3 45 7
2 3 45
102
7
101
2.0
1.6
1.2
0.8
V
CC=300V
I
B1=–IB2=1.5A
5
4
T
T
j
=25°C
Irr
j=125°C
3
2
Q
rr
100
101
7
5
4
3
2
0.4
0
t
rr
10 –1
100
100
100
2
3 4 5 7 101
2
3 4 5 7 102
10 –3 2 3 45 710 –22 3 45 710 –12 3 45 7
FORWARD CURRENT IF (A)
TIME (s)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM75E2Y/E3Y-H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES (Diode part (D2))
MAXIMUM FORWARD CHARACTERISTIC
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC
100
101
2 3 45 7
2 3 457
103
7
1.0
0.8
0.6
0.4
5
3
2
Tj=25°C
102
7
5
3
2
101
7
5
0.2
0
3
2
100
0.6
1.0
1.4
1.8
2.2
10 –3 2 3 45 710 –22 3 45 710 –12 3 45 7 100
FORWARD VOLTAGE VF (V)
TIME (s)
MAXIMUM SURGE CURRENT
REVERSE RECOVERY CHARACTERISTICS
(VS. IF) (TYPICAL)
102
7
102
101
100
10 –1
2000
1800
1600
1400
1200
1000
800
VR=300V
I
rr
5
di/dt=–150A/µs
T
j
j
=25°C
=150°C
3
2
T
Q
rr
101
7
5
3
2
100
7
5
600
t
rr
400
3
200
2
10 –1
0
100
100
101
102
103
2 3 45 7
2
3 4 5 7 101
2
3 4 5 7 102
2 3 45 7
2 3 45 7
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT IF (A)
REVERSE RECOVERY CHARACTERISTICS
(VS. di/dt) (TYPICAL)
102
7
102
I
rr
VR=300V
5
IF
=75A
3
2
T
T
j
j
=25°C
=150°C
Q
rr
101
101
7
5
3
2
100
7
5
100
t
rr
3
2
10 –1
10 –1
102 103
2 3 45 7
100
101
2 3 45 7
2 3 45 7
di/dt (A/µs)
Feb.1999
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