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RD30HUF1 [MITSUBISHI]

Silicon MOSFET Power Transistor,520MHz,30W; 硅MOSFET功率晶体管， 520MHz的， 30W
RD30HUF1
型号： RD30HUF1
厂家： Mitsubishi Group    Mitsubishi Group
描述：

Silicon MOSFET Power Transistor,520MHz,30W
硅MOSFET功率晶体管， 520MHz的， 30W

晶体 晶体管
文件： 总7页 (文件大小：391K)
中文：  中文翻译
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MITSUBISHI RF POWER MOS FET  
ELECTROSTATIC SENSITIVE DEVICE  
OBSERVE HANDLING PRECAUTIONS  
RD30HUF1  
Silicon MOSFET Power Transistor,520MHz,30W  
OUTLINE DRAWING  
DESCRIPTION  
22.0+/-0.3  
RD30HUF1 is a MOS FET type transistor specifically  
designed for UHF RF power amplifiers applications.  
18.0+/-0.3  
7.2+/-0.5  
7.6+/-0.3  
4-C1  
1
FEATURES  
•High power gain:  
Pout>30W, Gp>10dB @Vdd=12.5V,f=520MHz  
•High Efficiency: 55%typ.  
2
R1.6  
3
PIN  
APPLICATION  
2.8+/-0.3  
1.Drain  
2.Source  
3.Gate  
For output stage of high power amplifiers in UHF  
band mobile radio sets.  
UNIT:mm  
ABSOLUTE MAXIMUM RATINGS  
(Tc=25 UNLESS OTHERWISE NOTED)  
°C  
SYMBOL  
VDSS  
VGSS  
Pch  
PARAMETER  
Drain to source voltage  
Gate to source voltage  
Channel dissipation  
Input power  
Junction temperature  
Storage temperature  
Thermal resistance  
CONDITIONS RATINGS UNIT  
30  
+/-20  
75  
V
V
Tc=25°C  
Zg=Zl=50Ω  
W
Pin  
7.5  
W
°C  
°C  
Tj  
175  
-40 to +175  
2.0  
Tstg  
°C/W  
Rth-c  
Junction to case  
Note 1: Above parameters are guaranteed independently.  
ELECTRICAL CHARACTERISTICS (Tc=25 , UNLESS OTHERWISE NOTED)  
°C  
LIMITS  
UNIT  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
-
TYP  
-
MAX.  
I
Zero gate voltage drain current  
Gate to source leak current  
Gate threshold voltage  
Output power  
Drain efficiency  
Load VSWR tolerance  
V
V
V
=17V, V =0V  
200  
uA  
uA  
V
W
%
-
DSS  
GSS  
TH  
DS  
GS  
DS  
GS  
I
=10V, V =0V  
-
-
1
2.3  
-
DS  
V
Pout  
=12V, I =1mA  
1.3  
30  
50  
1.8  
35  
55  
DS  
f=520MHz,V =12.5V  
DD  
Pin=3.0W,Idq=1.0A  
-
ηD1  
V
DD  
=15.2V,Po=30W(PinControl)  
No destroy  
Idq=1.0A,Zg=50Ω  
Load VSWR=20:1(All Phase)  
Note : Above parameters , ratings , limits and conditions are subject to change.  
RD30HUF1  
REV.1 14 MAY. 2003  
MITSUBISHI ELECTRIC  
1/7  
MITSUBISHI RF POWER MOS FET  
ELECTROSTATIC SENSITIVE DEVICE  
OBSERVE HANDLING PRECAUTIONS  
RD30HUF1  
Silicon MOSFET Power Transistor,520MHz,30W  
TYPICAL CHARACTERISTICS  
CHANNNEL DISSIPATION VS.  
AMBIENT TEMPERATURE  
Vgs-Ids CHARACTERISTICS  
10  
100  
80  
60  
40  
20  
0
Ta=+25°C  
Vds=10V  
8
6
4
2
0
0
40  
80 120 160 200  
0
1
2
3
4
5
Vgs(V)  
AMBIENT TEMPERATURE Ta(°C)  
Vds-Ids CHARACTERISTICS  
Vds VS. Ciss CHARACTERISTICS  
140  
10  
Vgs=5V  
Ta=+25°C  
120  
100  
80  
60  
40  
20  
0
8
6
4
2
0
Vgs=4.5V  
Vgs=4V  
Ta=+25°C  
f=1MHz  
Vgs=3.5V  
Vgs=3V  
Vgs=2.5V  
0
5
10  
Vds(V)  
15  
20  
0
2
4
6
8
10  
Vds(V)  
Vds VS. Coss CHARACTERISTICS  
Vds VS. Crss CHARACTERISTICS  
120  
100  
80  
60  
40  
20  
0
16  
14  
12  
10  
8
Ta=+25°C  
f=1MHz  
Ta=+25°C  
f=1MHz  
6
4
2
0
0
5
10  
Vds(V)  
15  
20  
0
5
10  
Vds(V)  
15  
20  
RD30HUF1  
REV.1 14 MAY. 2003  
MITSUBISHI ELECTRIC  
2/7  
MITSUBISHI RF POWER MOS FET  
ELECTROSTATIC SENSITIVE DEVICE  
OBSERVE HANDLING PRECAUTIONS  
RD30HUF1  
Silicon MOSFET Power Transistor,520MHz,30W  
TYPICAL CHARACTERISTICS  
Pin-Po CHARACTERISTICS  
Pin-Po CHARACTERISTICS  
50  
40  
30  
20  
10  
0
100  
80  
60  
40  
20  
0
50  
40  
30  
20  
10  
0
100  
80  
60  
40  
20  
0
Ta=+25°C  
f=520MHz  
Vdd=12.5V  
Idq=1.0A  
Po  
Po  
ηd  
ηｄ  
Ta=25°C  
f=520MHz  
Vdd=12.5V  
Idq=1.0A  
Gp  
Idd  
Ｉｄｄ  
10  
20  
30  
40  
0
2
4
6
8
10  
Pin(dBm)  
Pin(W)  
Vdd-Po CHARACTERISTICS  
Vgs-Ids CHARACTERISTICS 2  
10  
50  
40  
30  
20  
10  
0
10  
8
+25°C  
Vds=10V  
-25°C  
Ta=25°C  
f=520MHz  
Tc=-25~+75°C  
8
6
4
2
0
Po  
Pin=3W  
Icq=1.0A  
Zg=ZI=50 ohm  
6
+75°C  
Idd  
4
2
0
1.5  
2.5  
3.5  
4.5  
4
6
8
10  
12  
14  
Vgs(V)  
Vdd(V)  
RD30HUF1  
REV.1 14 MAY. 2003  
MITSUBISHI ELECTRIC  
3/7  
MITSUBISHI RF POWER MOS FET  
ELECTROSTATIC SENSITIVE DEVICE  
OBSERVE HANDLING PRECAUTIONS  
RD30HUF1  
Silicon MOSFET Power Transistor,520MHz,30W  
EQUIVALENT CIRCUIT(f=520MHz)  
Vgg  
Vdd  
9.1KOHM  
C1  
L3  
C3  
8.2kOHM  
100OHM  
15/5pF  
C2  
7/5pF  
L2  
L1  
RD30HUF1  
RF-IN  
RF-OUT  
56pF  
56pF  
15/15pF  
15/5/7/15pF  
12  
15pF  
5
8
14  
5
10  
12  
8
14  
100  
100  
C1:2200pF,10uF in parallel  
C2:2200pF*2 in parallel  
Note:Board m aterial-Teflon substrate  
M icro strip line width=4.2m m/50OHM ,er:2.7,t=1.6mm  
Dim ensions:mm  
C3:2200pF,330uF in parallel  
L1:3Turns,I.D6mm ,D1.6m m P=1 silver plateted copper wire  
L2:2Turns,I.D6mm ,D1.6m m P=1 silver plateted copper wire  
L2:4Turns,I.D6mm ,D1.6m m P=1 silver plateted copper wire  
RD30HUF1  
REV.1 14 MAY. 2003  
MITSUBISHI ELECTRIC  
4/7  
MITSUBISHI RF POWER MOS FET  
ELECTROSTATIC SENSITIVE DEVICE  
OBSERVE HANDLING PRECAUTIONS  
RD30HUF1  
Silicon MOSFET Power Transistor,520MHz,30W  
INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS  
f=520MHz Zout  
f=520MHz Zin  
f=480MHz Zin  
f=480MHz Zout  
f=440MHz Zout  
f=440MHz Zin  
Zo=10Ω  
Zin , Zout  
F
Zin  
Zout  
(MHz)  
440  
480  
(ohm)  
(ohm)  
Conditions  
1.16-j0.14  
0.90+j0.35  
0.88+j0.84  
1.17+j0.74  
1.15+j1.07  
1.47+j1.24  
Po=40W, Vdd=12.5V,Pin=3.0W  
Po=38W, Vdd=12.5V,Pin=3.0W  
Po=35W, Vdd=12.5V,Pin=3.0W  
520  
RD30HUF1  
REV.1 14 MAY. 2003  
MITSUBISHI ELECTRIC  
5/7  
MITSUBISHI RF POWER MOS FET  
ELECTROSTATIC SENSITIVE DEVICE  
OBSERVE HANDLING PRECAUTIONS  
RD30HUF1  
Silicon MOSFET Power Transistor,520MHz,30W  
RD30HUF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA)  
Freq.  
[MHz]  
100  
150  
200  
250  
300  
350  
400  
450  
500  
520  
550  
600  
650  
700  
750  
800  
850  
900  
950  
1000  
1050  
1100  
S11  
S21  
S12  
S22  
(mag)  
0.870  
0.880  
0.890  
0.902  
0.911  
0.921  
0.930  
0.931  
0.941  
0.946  
0.946  
0.947  
0.951  
0.957  
0.960  
0.962  
0.962  
0.962  
0.961  
0.961  
0.965  
0.964  
(ang)  
-173.4  
-177.3  
-179.5  
178.2  
176.0  
174.1  
172.1  
170.0  
168.0  
167.1  
166.3  
164.2  
162.5  
160.7  
159.1  
157.6  
155.8  
154.2  
152.7  
151.2  
149.6  
148.2  
(mag)  
0.016  
0.015  
0.013  
0.011  
0.010  
0.008  
0.007  
0.005  
0.004  
0.004  
0.004  
0.004  
0.004  
0.006  
0.007  
0.007  
0.009  
0.009  
0.010  
0.012  
0.012  
0.014  
(ang)  
-8.8  
(mag)  
7.566  
4.825  
3.398  
2.568  
1.982  
1.588  
1.299  
1.070  
0.907  
0.852  
0.780  
0.673  
0.589  
0.522  
0.464  
0.419  
0.383  
0.341  
0.318  
0.296  
0.270  
0.259  
(ang)  
74.2  
63.2  
55.1  
47.0  
40.2  
34.5  
29.0  
23.9  
20.3  
18.7  
15.9  
12.5  
10.1  
6.6  
(mag)  
0.723  
0.748  
0.778  
0.817  
0.832  
0.857  
0.879  
0.887  
0.901  
0.908  
0.913  
0.916  
0.928  
0.932  
0.936  
0.942  
0.945  
0.946  
0.952  
0.955  
0.955  
0.957  
(ang)  
-170.2  
-172.5  
-173.9  
-175.6  
-177.6  
-179.7  
178.3  
176.3  
174.2  
173.4  
172.3  
170.5  
168.6  
166.7  
164.9  
163.1  
161.6  
160.0  
158.2  
157.0  
155.4  
153.6  
-18.0  
-23.7  
-27.9  
-31.1  
-31.3  
-29.2  
-21.8  
-9.5  
-3.9  
7.5  
28.3  
46.8  
53.0  
56.5  
63.6  
64.1  
63.5  
65.6  
65.3  
64.6  
64.8  
4.1  
2.2  
-1.2  
-3.0  
-4.2  
-7.4  
-8.3  
-9.4  
RD30HUF1  
REV.1 14 MAY. 2003  
MITSUBISHI ELECTRIC  
6/7  
MITSUBISHI RF POWER MOS FET  
ELECTROSTATIC SENSITIVE DEVICE  
OBSERVE HANDLING PRECAUTIONS  
RD30HUF1  
Silicon MOSFET Power Transistor,520MHz,30W  
Keep safety first in your circuit designs!  
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more  
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead  
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit  
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable  
material or (iii) prevention against any malfunction or mishap.  
RD30HUF1  
REV.1 14 MAY. 2003  
MITSUBISHI ELECTRIC  
7/7  

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