RM20DA-6S [MITSUBISHI]
Rectifier Diode, 1 Phase, 2 Element, 20A, 300V V(RRM), Silicon,;
| 型号： | RM20DA-6S |
| 厂家： | 
Mitsubishi Group |
| 描述： | Rectifier Diode, 1 Phase, 2 Element, 20A, 300V V(RRM), Silicon, 快速恢复二极管 局域网 |
| 文件： | 总3页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI FAST RECOVERY DIODE MODULES
RM20DA/CA/C1A-XXS
MEDIUM POWER, HIGH FREQUENCY USE
INSULATED TYPE
RM20DA/CA/C1A-XXS
• IDC
DC current .................................. 20A
• VRRM Repetitive peak reverse voltage
......................300/600V
• trr
Reverse recovery time .............0.4µs
• Insulated Type
APPLICATION
Free wheel use, Welder
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
53.5
43.3
16
CA
C1A
DA
R6
φ5.3
8
3–M4
3.5
33
3.5
LABEL
Feb.1999
MITSUBISHI FAST RECOVERY DIODE MODULES
RM20DA/CA/C1A-XXS
MEDIUM POWER, HIGH FREQUENCY USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Voltage class
Symbol
VRRM
Parameter
Unit
6
12
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Reverse DC voltage
300
360
240
600
720
480
V
V
V
VDRM
VR (DC)
Symbol
Parameter
DC current
Conditions
Ratings
20
Unit
A
IDC
Resistive load, TC=93°C
IFSM
Surge (non-repetitive) forward current
One half cycle at 60Hz, peak value
Value for one cycle of surge current
400
A
2
2
2
2
I t
I t for fusing
6.7×10
A s
Tj
Junction temperature
Storage temperature
Isolution voltage
–40~+150
–40~+125
2500
°C
°C
Tstg
Viso
Charged part to case
V
0.98~1.47
10~15
N·m
kg·cm
N·m
kg·cm
g
Main terminal screw M4
—
—
Mounting torque
Weight
1.47~1.96
15~20
Mounting screw M5
Typical value
90
ELECTRICAL CHARACTERISTICS
Limits
Typ.
—
Symbol
Parameter
Test conditions
Unit
Min.
—
Max.
10
IRRM
Repetitive reverse current
Forward voltage
Tj=150°C, VRRM applied
mA
V
—
1.6
—
1.8
0.2
0.5
0.4
1.5
1.2
0.3
VFM
trr
Tj=25°C, IFM=20A, instantaneous meas.
—
Reverse recovery time
Reverse recovery charge
Reverse recovery time
Reverse recovery charge
Thermal resistance
µs
1
IFM=20A, di/dt=–50A/µs, VR=150/300V* , Tj=25°C
—
—
Qrr
µC
—
—
trr
µs
1
IFM=20A, di/dt=–50A/µs, VR=150/300V* , Tj=150°C
—
—
Qrr
µC
—
—
Rth (j-c)
Rth (c-f)
Junction to case
°C/W
°C/W
—
—
Contact thermal resistance
Case to fin, conductive grease applied
1
*
6 class: VR=150V 12class: VR=300V
Feb.1999
MITSUBISHI FAST RECOVERY DIODE MODULES
RM20DA/CA/C1A-XXS
MEDIUM POWER, HIGH FREQUENCY USE
INSULATED TYPE
PERFORMANCE CURVES
MAXIMUM FORWARD CHARACTERISTIC
MAXIMUM TRANSIENT THERMAL IMPEDANCE
(JUNCTION TO CASE)
100 2 3 45 7101 2 3 45
2.0
102
7
Tj=25°C
5
1.8
1.6
1.4
3
2
101
7
1.2
1.0
0.8
0.6
0.4
5
3
2
100
7
5
3
0.2
0
2
10 –1
10 –3
10 –2
10 –1
2 3 45 7
100
2 3 45 7
0.2
1.0
1.8
2.6
3.4
4.2
2 3 45 7
FORWARD VOLTAGE (V)
TIME (s)
ALLOWABLE SURGE (NON-REPETITIVE)
FORWARD CURRENT
REVERSE RECOVERY CHARACTERISTICS
VS. FORWARD CURRENT (TYPICAL)
500
3
2
3
VR=150/300V
di/dt=–50A/µs
450
400
350
300
250
200
Tj=25°C
Tj=150°C
10 1
7
10 0
Irr
trr
5
4
3
2
Qrr
150
100
50
100
7
10–1
5
4
3
3
2
3 4 5 7 102
0
100
2
3 4 5 7 101
FORWARD CURRENT (A)
1
2
3 4 5 7 10 20 30405070100
CONDUCTION TIME
(CYCLES AT 60Hz)
REVERSE RECOVERY CHARACTERISTICS
VS. –di/dt (TYPICAL)
3
2
3
VR=150/300V
IF=20A
Irr
Qrr
10 1
7
10 0
5
4
Qrr
trr
3
2
100
7
10–1
5
4
3
Tj=25°C
Tj=150°C
2
3 4 5 7 103
3
101
2
3 4 5 7 102
–di/dt (A/µs)
Feb.1999
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