FD1000FV-90 [MITSUBISHI]

HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE; 高功率,高频率,按包装类型
FD1000FV-90
型号: FD1000FV-90
厂家: MITSUBISHI ELECTRIC SEMICONDUCTOR    MITSUBISHI ELECTRIC SEMICONDUCTOR
描述:

HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
高功率,高频率,按包装类型

整流二极管 高功率电源
文件: 总3页 (文件大小:53K)
下载:  下载PDF数据表文档文件

FD1000FX-90

HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE

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32 MITSUBISHI

FD1000R17IE4

PrimePACK™3 Modul und NTC

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34 INFINEON

FD1000R17IE4D_B2

PrimePACK3 module and NTC

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17 INFINEON

FD1000R33HE3-K

IHM-B module with fast Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode

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53 INFINEON

FD1000R33HE3KB60BPSA1

Insulated Gate Bipolar Transistor,

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0 INFINEON

FD1000R33HE3KBOSA1

Insulated Gate Bipolar Transistor

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0 INFINEON

FD100H06A5B

Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, WAFER

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0 VISHAY

FD100H06A5BPBF

Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, WAFER

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0 VISHAY

FD100H06A5F

Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, WAFER

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0 VISHAY

FD100H06A5P

Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, WAFER

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0 VISHAY

FD100N06A5B

Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, 5 INCH, WAFER

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0 VISHAY

FD100N06A5F

Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, 5 INCH, WAFER

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0 VISHAY

FD100N06A5P

Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, 5 INCH, WAFER

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0 VISHAY

FD100N06A5R

Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, 5 INCH, WAFER

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0 VISHAY

FD100R12KF-K

TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 100A I(C) | M:HL093HW048

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30 ETC