MGF1402B [MITSUMI]

LOW NOISE GaAs FET; 低噪声砷化镓场效应管
MGF1402B
型号: MGF1402B
厂家: MITSUMI ELECTRONICS, CORP.    MITSUMI ELECTRONICS, CORP.
描述:

LOW NOISE GaAs FET
低噪声砷化镓场效应管

晶体 晶体管 放大器
文件: 总5页 (文件大小:145K)
下载:  下载PDF数据表文档文件

MGF1402B-01

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

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0 MITSUBISHI

MGF1402BX-01

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

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0 MITSUBISHI

MGF1403

Transistor,

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1 MITSUBISHI

MGF1403-61-18

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, CERAMIC PACKAGE-4

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0 MITSUBISHI

MGF1403-61-18

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, CERAMIC PACKAGE-4

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0 MITSUBISHI

MGF1403-61-20

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, CERAMIC PACKAGE-4

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0 MITSUBISHI

MGF1403-61-20

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, CERAMIC PACKAGE-4

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0 MITSUBISHI

MGF1403-61-23

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, CERAMIC PACKAGE-4

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0 MITSUBISHI

MGF1403-61-23

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, CERAMIC PACKAGE-4

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0 MITSUBISHI

MGF1403B

LOW NOISE GaAs FET

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31 MITSUBISHI

MGF1403B

LOW NOISE GaAs FET

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18 MITSUBISHI

MGF1403B_1

LOW NOISE GaAs FET

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16 MITSUBISHI

MGF1403B-01

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

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0 MITSUBISHI

MGF1403BV-01

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

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0 MITSUBISHI

MGF1403BX-01

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

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0 MITSUBISHI