MM3746 [MITSUMI]

N channel high side FET drive by charge pump;


型号：	MM3746
厂家：	MITSUMI ELECTRONICS, CORP.
描述：	N channel high side FET drive by charge pump
文件：	总3页 (文件大小：201K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MM3746 Series

N channel high side FET drive by charge pump

Outline

MM3746 series are protection ICs with charger pump and drive

high side N channel FET for Lithium-ion and Lithium-polymer

secondary battery. This IC is most suitable for the intelligent

battery pack with which I communicate data between the battery

pack and the system.

And MM3746 series has a temperature detection by using a

NTC Thermistor, protects the battery pack and system from over

temperature.

Features

(Unless otherwise speciﬁed, Ta=25°C)

(1) Range and accuracy of detection/release voltage

Overcharge detection voltage............................ Vdet1 ................................. 4.2V to 4.6V, 5mV steps.............Accuracy±15mV

Overdischarge detection voltage....................... Vdet2 ................................. 2.0V to 3.0V, 50mV steps...........Accuracy±40mV

Discharging overcurrent detection voltage........ Vdet3 ................................. 10mV to 150mV, 1mV steps.........Accuracy±3.0mV *1

Charging overcurrent detection voltage ............ Vdet4 ................................. –150mV to –10mV, 1mV steps .....Accuracy±3.0mV *1

Short detection voltage...................................... Vshort ................................ 40mV to 300mV, 50mV steps....... Accuracy±5.0mV

0V battery charge inhibition battery voltage ...... Vst ..................................... ±1.3V ﬁxed .................................. Accuracy±150mV

Temperature detection....................................... Tdet ................................... 55 to 85°C.................................... Accuracy±5.0°C

*1 Accuracy of overcurrent detection voltage (Ta=25°C)

ꢀꢁet3ꢂ ꢀꢁet4

90 100

Overcurrent detection voltage ꢀmVꢁ

(2) Temperature detection function.............................Selectable “Enable” or “Disable”

(3) 0V battery charge function ....................................Selection from “Permission” or “Inhibition”

(4) Current consumption (Not include NTC bias current)

Normal mode .....................................................Typ. 6.0µA, Max. 10.0µA

Stand-by mode..................................................Max. 0.1µA (Overdischarge latch function Enable)

Max. 1.2µA (Overdischarge latch function Disable)

Pin assignment

WLCSP-10A

Pin no.

Symbol

VSS

Function

Negative power supply voltage input terminal

Positive power supply voltage input terminal

Charge FET control terminal

(Top view)

VDD

COUT

*: +6<;

TH(TEST) Temperature level detect terminal (Test terminal)

*6<;

=++

(ꢄ

(ꢃ

(ꢂ

)ꢄ

*ꢄ

+ꢄ =ꢅ

+ꢃ

+ꢂ

=6<;

Current level detect terminal

)ꢂ

*ꢂ

=::

Flying capacitor connecting terminal

Discharge FET control terminal

Flying capacitor connecting terminal

Charge pump output terminal

ꢀ;,:;ꢁ

DOUT

VOUT

V+

Charger positive voltage input terminal

MM3746 Series

LINE UP

Product name

Package

Vdet1 Vdet2 Vdet3 Vdet4 Vshort RdetTH

40.0

---

MM3746BB1LBE

MM3746BC1LBE

WLCSP-10A 4.270 2.300 13.0 -10.0

WLCSP-10A 4.490 2.900 33.0 -17.0

Disable Enable Enable Disable Inhibition Disable

140.0

Delay time

tVdet1

tVdet2

tVdet3

tVdet4

tshort1

µs

tVtdet

---

1020

128

16.0

8.0

250

8.0

250

Please inquire to us, if you request a rank other than the above.

MM3746 Series

Typical application circuit

P+

B+

COUT

DOUT

VDD

TEST

Over

charge

V+

FET Driver

–

Over

discharge

VOUT

–

Protector

Logic

Discharge

cuurent

^–Charge

cuurent

–

control

Short

–

VSS

Oscillator

B-

P-

Rsns

The characteristics of the charge pump (ripple voltage, output current ability, etc.) are decided by the capacitor (C1, Cf, Co). Please

select ceramic capacitor with a small ESR(Equivalent Series Resistance). Please arrange Cf near the CN and CP terminal.

R1 and C1 help to stabilize a supply voltage ﬂuctuation. 0.1µF or more is recommended for C1 to secure stable operation. The

value of Cf and Co aﬀects the output current drivability and the output voltage ripple respectively. The recommend value of Cf and

Co is 0.047µF to drive CFET and DFET with no fail.

The detection voltage rises by the current consumption ( IDD ) of IC when R1 is too large. 300Ω or less is recommended for R1. The

variation of overcharge detection voltage ( ∆Vdet1 ) is expressed in the following equation.

∆Vdet1 = R1 * IDD

R1 and R2 are useful for the current limiting resistance if a charger is connected reversely or a high-voltage charger that exceeds

the absolute maximum rating is connected. If total value of “R1+R2” is too small, it may exceed allowed power dissipation of IC.

Please have total value of “R1 and R2” should be more than 300ohm. If R2 is too large, CFET may not be able to turn oﬀ, therefore

please use 10kohm or less.

C2, C3 and C4 are useful to improve the system stability against the voltage ripple and exogenous noise. Please consider whether

or not capacitors should be placed, the area should be placed, and capacitance value in consideration of the system characteristic.

Especially C4 prevents false discharge overcurrent detection.

Current threshold of discharging overcurrent detection and short detection (Idoc, Icoc, Ishort) are expressed in the following

equations.

Idoc = Vdet3 / Rsns

Icoc = Vdet4 / Rsns

Ishort = Vshort / Rsns

MITSUMI ELECTRIC CO., LTD.

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