MSN0650D-TO252 [MORESEMI]

60V(D-S) N-Channel Enhancement Mode Power MOS FET;


型号：	MSN0650D-TO252
厂家：	MORE Semiconductor
描述：	60V(D-S) N-Channel Enhancement Mode Power MOS FET
文件：	总6页 (文件大小：536K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MSN0650D

60V(D-S) N-Channel Enhancement Mode Power MOS FET

General Features

● V_DS=60V,I_D=50A

R_DS(ON)<20mΩ @ V_GS=10V

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high E_AS

● Excellent package for good heat dissipation

● Special process technology for high ESD capability

Lead Free

Application

●

Power switching application

Hard switched and high frequency circuits

Uninterruptible Power Supply

Marking and pin assignment

PIN Configuration

Schematic diagram

TO-252-2L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

MSN0650D

TO-252-2L

2500PCS

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^DS

±20

V^GS

I_D

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

I_D(100℃)

I_DM

220

Maximum Power Dissipation

P_D

Derating factor

Single pulse avalanche energy ^{(Note 5)}

0.53

115

W/℃

℃

E_AS

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

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MSN0650D

Thermal Characteristic

Thermal Resistance,Junction-to-Case^{(Note 2)}

R_θJC

1.88

℃/W

Electrical Characteristics (T_C=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

On Characteristics ^{(Note 3)}

Gate Threshold Voltage

Drain-Source On-State Resistance

Forward Transconductance

Dynamic Characteristics ^(Note4)

Input Capacitance

BV_DSS

I_DSS

V_GS=0V I_D=250μA

V_DS=60V,V_GS=0V

V_GS=±20V,V_DS=0V

μA

I_GSS

±100

V_GS(th)

R_DS(ON)

g_FS

V_DS=V_GS,I_D=250μA

V_GS=10V, I_D=20A

V_DS=25V,I_D=20A

1.5

2.0

2.5

mΩ

C_lss

C_oss

C_rss

900

104

V_DS=25V,V_GS=0V,

Output Capacitance

F=1.0MHz

Reverse Transfer Capacitance

Switching Characteristics ^{(Note 4)}

Turn-on Delay Time

t_d(on)

t_r

t_d(off)

t_f

Turn-on Rise Time

V_DD=30V,I_D=2A,R_L=15Ω

_GS=10V,R_G=2.5Ω

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Q_g

Q_gs

Q_gd

V_DS=30V,I_D=50A,

_GS=10V

Gate-Source Charge

Gate-Drain Charge

Drain-Source Diode Characteristics

Diode Forward Voltage ^{(Note 3)}

Diode Forward Current ^{(Note 2)}

Reverse Recovery Time

V_SD

I_S

V_GS=0V,I_S=40A

1.2

t_rr

TJ = 25°C, IF = 40A

di/dt = 100A/μs^(Note3)

Reverse Recovery Charge

Forward Turn-On Time

Qrr

t_on

100

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

5. EAS condition:Tj=25℃,V_DD=30V,V_G=10V,L=0.5mH,Rg=25Ω

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MSN0650D

Test Circuit

1) E_ASTest Circuit

2) Gate Charge Test Circuit

3) Switch Time Test Circuit

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MSN0650D

Typical Electrical and Thermal Characteristics (Curves)

Vds Drain-Source Voltage (V)

T_J-Junction Temperature(℃)

Figure 1 Output Characteristics

Figure 4 Rdson-Junction Temperature

Vgs Gate-Source Voltage (V)

Qg Gate Charge (nC)

Figure 2 Transfer Characteristics

Figure 5 Gate Charge

I_D- Drain Current (A)

Vsd Source-Drain Voltage (V)

Figure 3 Rdson- Drain Current

Figure 6 Source- Drain Diode Forward

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MSN0650D

Vds Drain-Source Voltage (V)

T_J-Junction Temperature(℃)

Figure 7 Capacitance vs Vds

Figure 9 BV_DSSvs Junction Temperature

Vds Drain-Source Voltage (V)

T_J-Junction Temperature(℃)

Figure 8 Safe Operation Area

Figure 10 V_GS(th)vs Junction Temperature

Square Wave Pluse Duration(sec)

Figure 11 Normalized Maximum Transient Thermal Impedance

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MSN0650D

TO-252 Package Information

Dimensions In Millimeters

Dimensions In Inches

Symbol

Min.

2.200

0.000

0.660

0.460

6.500

5.100

Max.

2.400

0.127

0.860

0.580

6.700

5.460

Min.

0.087

0.000

0.026

0.018

0.256

0.201

Max.

0.094

0.005

0.034

0.023

0.264

0.215

0.483 TYP.

0.190 TYP.

6.000

2.186

9.800

6.200

2.386

0.236

0.086

0.386

0.244

0.094

0.409

10.400

2.900 TYP.

1.600 TYP.

0.114 TYP.

0.063 TYP.

1.400

1.700

0.055

0.067

0.600

1.100

0°

1.000

1.300

8°

0.024

0.043

0°

0.039

0.051

8°

0.000

0.300

0.000

0.012

5.350 TYP.

0.211 TYP.

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