MSN0650Z [MORESEMI]
60V(D-S) N-Channel Enhancement Mode Power MOS FET;
| 型号： | MSN0650Z |
| 厂家： | 
MORE Semiconductor |
| 描述： | 60V(D-S) N-Channel Enhancement Mode Power MOS FET |
| 文件： | 总6页 (文件大小：431K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MSN0650Z
60V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =60V,ID =50A
RDS(ON) <20mΩ @ VGS=10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Lead Free
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
PIN Configuration
Marking and pin assignment
Schematic diagram
TO-251 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
MSN0650Z
MSN0650Z
TO-251
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
60
Unit
V
Drain-Source Voltage
VDS
VGS
Gate-Source Voltage
±20
V
Drain Current-Continuous
50
35
A
A
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
ID (100℃)
IDM
220
A
Maximum Power Dissipation
Derating factor
Single pulse avalanche energy (Note 5)
80
W
PD
0.53
W/℃
mJ
℃
EAS
115
Operating Junction and Storage Temperature Range
-55 To 175
TJ,TSTG
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MSN0650Z
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
1.88
℃/W
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
BVDSS
IDSS
VGS=0V ID=250μA
VDS=60V,VGS=0V
VGS=±20V,VDS=0V
60
-
70
-
-
1
V
μA
nA
IGSS
-
-
±100
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=20A
VDS=25V,ID=20A
1.5
-
2.0
17
-
2.5
20
-
V
mΩ
S
24
Clss
Coss
Crss
-
-
-
900
104
33
-
-
-
PF
PF
PF
VDS=25V,VGS=0V,
Output Capacitance
F=1.0MHz
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
25
5
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
V
DD=30V,ID=2A,RL=15Ω
VGS=10V,RG=2.5Ω
Turn-Off Delay Time
50
6
Turn-Off Fall Time
Total Gate Charge
Qg
Qgs
Qgd
30
10
5
VDS=30V,ID=50A,
GS=10V
Gate-Source Charge
V
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
VSD
IS
VGS=0V,IS=40A
-
-
-
-
1.2
50
-
V
A
-
trr
TJ = 25°C, IF = 40A
di/dt = 100A/μs(Note3)
50
nS
nC
Reverse Recovery Charge
Forward Turn-On Time
Qrr
ton
100
-
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition:Tj=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω
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MSN0650Z
Test Circuit
1) EAS Test Circuit
2) Gate Charge Test Circuit
3) Switch Time Test Circuit
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MSN0650Z
Typical Electrical and Thermal Characteristics (Curves)
Vds Drain-Source Voltage (V)
TJ-Junction Temperature(℃)
Figure 1 Output Characteristics
Figure 4 Rdson-JunctionTemperature
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Figure 5 Gate Charge
ID- Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson- Drain Current
Figure 6 Source- Drain Diode Forward
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MSN0650Z
Vds Drain-Source Voltage (V)
TJ-Junction Temperature(℃)
Figure 7 Capacitance vs Vds
Figure 9 BVDSS vs Junction Temperature
Vds Drain-Source Voltage (V)
TJ-Junction Temperature(℃)
Figure 8 Safe Operation Area
Figure 10 VGS(th) vs Junction Temperature
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
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MSN0650Z
TO-251 Package Information
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
Max.
2.400
1.350
1.650
0.700
0.900
0.580
0.580
6.650
5.400
5.700
Min.
0.087
0.042
0.053
0.020
0.028
0.017
0.017
0.250
0.205
0.213
Max.
0.094
0.054
0.065
0.028
0.035
0.023
0.023
0.262
0.213
0.224
A
A1
B
2.200
1.050
1.350
0.500
0.700
0.430
0.430
6.350
5.200
5.400
b
b1
c
c1
D
D1
E
e
2.300 TYP
0.091 TYP
e1
L
4.500
7.500
4.700
7.900
0.177
0.295
0.185
0.311
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