MSN06B5K-TO220 [MORESEMI]

60V(D-S) N-Channel Enhancement Mode Power MOS FET;
MSN06B5K-TO220
型号: MSN06B5K-TO220
厂家: MORE Semiconductor    MORE Semiconductor
描述:

60V(D-S) N-Channel Enhancement Mode Power MOS FET

文件: 总6页 (文件大小:527K)
中文:  中文翻译
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MSN06B5K  
60V(D-S) N-Channel Enhancement Mode Power MOS FET  
General Features  
VDS =60V,ID =150A  
RDS(ON) <4.5m@ VGS=10V  
High density cell design for ultra low Rdson  
Fully characterized avalanche voltage and current  
Good stability and uniformity with high EAS  
Excellent package for good heat dissipation  
Special process technology for high ESD capability  
Lead Free  
Application  
Power switching application  
Hard switched and high frequency circuits  
Uninterruptible power supply  
PIN Configuration  
Marking and pin assignment  
Schematic diagram  
TO-220-3L top view  
Package Marking and Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Tape width  
Quantity  
MSN06B5K  
MSN06B5K  
TO-220-3L  
-
-
-
Absolute Maximum Ratings (TC=25unless otherwise noted)  
Parameter  
Symbol  
Limit  
60  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current-Continuous  
V
V
VDS  
±20  
VGS  
150  
105  
A
ID  
Drain Current-Continuous(TC=100)  
Pulsed Drain Current  
ID (100)  
IDM  
A
600  
A
Maximum Power Dissipation  
220  
W
PD  
Derating factor  
Single pulse avalanche energy (Note 5)  
1.47  
1400  
W/℃  
mJ  
EAS  
Operating Junction and Storage Temperature Range  
-55 To 175  
TJ,TSTG  
MORE Semiconductor Company Limited  
http://www.moresemi.com  
1/6  
MSN06B5K  
Thermal Characteristic  
Thermal Resistance,Junction-to-Case(Note 2)  
RθJC  
0.68  
/W  
Electrical Characteristics (TC=25unless otherwise noted)  
Parameter  
Symbol  
Condition  
Min Typ  
Max  
Unit  
Off Characteristics  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Body Leakage Current  
On Characteristics (Note 3)  
Gate Threshold Voltage  
Drain-Source On-State Resistance  
Forward Transconductance  
Dynamic Characteristics (Note4)  
Input Capacitance  
BVDSS  
IDSS  
VGS=0V ID=250μA  
VDS=60V,VGS=0V  
VGS=±20V,VDS=0V  
60  
-
68  
-
-
1
V
μA  
nA  
IGSS  
-
-
±100  
VGS(th)  
RDS(ON)  
gFS  
VDS=VGS,ID=250μA  
VGS=10V, ID=75A  
VDS=50V,ID=75A  
2
-
3
3.4  
-
4
4.5  
-
V
mΩ  
S
180  
Clss  
Coss  
Crss  
-
-
-
6500  
650  
-
-
-
PF  
PF  
PF  
VDS=25V,VGS=0V,  
F=1.0MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Switching Characteristics (Note 4)  
Turn-on Delay Time  
590  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
-
-
-
26  
24  
-
-
-
-
nS  
nS  
nS  
nS  
nC  
nC  
nC  
Turn-on Rise Time  
VDD=30V,ID=2A,RL=15Ω  
VGS=10V,RG=2.5Ω  
Turn-Off Delay Time  
91  
Turn-Off Fall Time  
39  
Total Gate Charge  
Qg  
Qgs  
Qgd  
163  
31  
V
DS=30V,ID=30A,  
GS=10V  
Gate-Source Charge  
V
Gate-Drain Charge  
64  
Drain-Source Diode Characteristics  
Diode Forward Voltage (Note 3)  
Diode Forward Current (Note 2)  
Reverse Recovery Time  
VSD  
IS  
VGS=0V,IS=40A  
-
-
-
-
1.2  
150  
60  
V
A
-
trr  
TJ = 25°C, IF = 40A  
di/dt = 100A/μs(Note3)  
42  
66  
nS  
nC  
Reverse Recovery Charge  
Forward Turn-On Time  
Qrr  
ton  
80  
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  
Notes:  
1. Repetitive Rating: Pulse width limited by maximum junction temperature.  
2. Surface Mounted on FR4 Board, t 10 sec.  
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.  
4. Guaranteed by design, not subject to production  
5. EAS conditionTj=25,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω  
MORE Semiconductor Company Limited  
http://www.moresemi.com  
2/6  
MSN06B5K  
Test circuit  
1EAS test Circuits  
2Gate charge test Circuit:  
3Switch Time Test Circuit:  
MORE Semiconductor Company Limited  
http://www.moresemi.com  
3/6  
MSN06B5K  
Typical Electrical and Thermal Characteristics (Curves)  
Vds Drain-Source Voltage (V)  
TJ-Junction Temperature()  
Figure 1 Output Characteristics  
Figure 4 Rdson-JunctionTemperature  
Vgs Gate-Source Voltage (V)  
Qg Gate Charge (nC)  
Figure 2 Transfer Characteristics  
Figure 5 Gate Charge  
ID- Drain Current (A)  
Vsd Source-Drain Voltage (V)  
Figure 3 Rdson- Drain Current  
Figure 6 Source- Drain Diode Forward  
MORE Semiconductor Company Limited  
http://www.moresemi.com  
4/6  
MSN06B5K  
Vds Drain-Source Voltage (V)  
TJ-Junction Temperature()  
Figure 7 Capacitance vs Vds  
Figure 9 BVDSS vs Junction Temperature  
Vds Drain-Source Voltage (V)  
TJ-Junction Temperature()  
Figure 8 Safe Operation Area  
Figure 10 VGS(th) vs Junction Temperature  
Square Wave Pluse Duration(sec)  
Figure 11 Normalized Maximum Transient Thermal Impedance  
MORE Semiconductor Company Limited  
http://www.moresemi.com  
5/6  
MSN06B5K  
TO-220-3L Package Information  
Dimensions In Millimeters  
Dimensions In Inches  
Symbol  
Min.  
4.400  
2.250  
0.710  
1.170  
0.330  
1.200  
9.910  
8.9500  
12.650  
Max.  
4.600  
2.550  
0.910  
1.370  
0.650  
1.400  
10.250  
9.750  
12.950  
Min.  
0.173  
0.089  
0.028  
0.046  
0.013  
0.047  
0.390  
0.352  
0.498  
Max.  
0.181  
0.100  
0.036  
0.054  
0.026  
0.055  
0.404  
0.384  
0.510  
A
A1  
b
b1  
c
c1  
D
E
E1  
e
2.540 TYP.  
0.100 TYP.  
e1  
F
4.980  
2.650  
7.900  
0.000  
12.900  
2.850  
5.180  
2.950  
8.100  
0.300  
13.400  
3.250  
0.196  
0.104  
0.311  
0.000  
0.508  
0.112  
0.204  
0.116  
0.319  
0.012  
0.528  
0.128  
H
h
L
L1  
V
7.500 REF.  
0.295 REF.  
Φ
3.400  
3.800  
0.134  
0.150  
MORE Semiconductor Company Limited  
http://www.moresemi.com  
6/6  

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