MSN0790K [MORESEMI]
70V(D-S) N-Channel Enhancement Mode Power MOS FET;型号: | MSN0790K |
厂家: | MORE Semiconductor |
描述: | 70V(D-S) N-Channel Enhancement Mode Power MOS FET |
文件: | 总6页 (文件大小:496K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MSN0790K
70V(D-S) N-Channel
Enhancement Mode Power MOS FET
General Features
● VDS = 70V,ID =90A
RDS(ON) < 7m Ω @ VGS=10V (Typ:5.9mΩ)
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
Lead Free
Application
● Power switching application
● Hard switched and High frequency circuits
● Uninterruptible power supply
Marking and pin assignment
PIN Configuration
Schematic diagram
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
MSN0790K
TO-220-3L
-
-
-
MSN0790K
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter Symbol
Limit
70
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
V
V
VDS
VGS
±20
90
63
A
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
ID (100℃)
IDM
A
320
170
1.13
550
A
Maximum Power Dissipation
W
PD
Derating factor
W/℃
mJ
℃
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
-55 To 175
TJ,TSTG
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MSN0790K
Thermal Characteristic
Thermal Resistance,Junction-to-Case (Note 2)
RθJc
0.88
℃/W
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Gate resistance
BVDSS
IDSS
VGS=0V ID=250μA
VDS=71V,VGS=0V
VGS=±20V,VDS=0V
70
-
74
-
-
1
V
μA
nA
IGSS
-
-
±100
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=40A
VDS=10V,ID=40A
2
-
3
6.1
50
4
7
-
V
mΩ
S
-
Rg
Clss
Coss
Crss
VDS=0V,VGS=0V,F=1.0MHz
-
-
-
-
0.63
4871
630.6
410.3
-
-
-
-
Ω
Input Capacitance
PF
PF
PF
VDS=15V,VGS=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
36.1
54.3
85.2
37.3
85.7
23.2
31.2
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
VDD=30V,ID=42A
VGS=10V,RGEN=10Ω
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Qg
Qgs
Qgd
V
DS=48V,ID=84A,
GS=10V
Gate-Source Charge
V
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
VSD
IS
VGS=0V,IS=20A
-
-
-
-
-
-
1.2
90
-
V
A
-
trr
TJ = 25°C, IF =84A
di/dt = 100A/μs(Note3)
88.3
65.9
nS
nC
Reverse Recovery Charge
Forward Turn-On Time
Qrr
ton
-
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition: Tj=25℃,VDD=35V,VG=10V,L=0.5mH,Rg=25Ω
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MSN0790K
Test Circuit
1) EAS test Circuit
2) Gate charge test Circuit
3) Switch Time Test Circuit
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MSN0790K
Typical Electrical and Thermal Characteristics (Curves)
Vds Drain-Source Voltage (V)
TJ-Junction Temperature(℃)
Figure 1 Output Characteristics
Figure 4 Rdson-JunctionTemperature
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Figure 5 Gate Charge
ID- Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson- Drain Current
Figure 6 Source- Drain Diode Forward
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MSN0790K
Vds Drain-Source Voltage (V)
TJ-Junction Temperature(℃)
Figure 7 Capacitance vs Vds
Figure 9 BVDSS vs Junction Temperature
Vds Drain-Source Voltage (V)
TJ-Junction Temperature(℃)
Figure 8 Safe Operation Area
Figure 10 Power De-rating
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
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MSN0790K
TO-220-3L Package Information
Dimensions In Millimeters
Dimensions In Inches
Min. Max.
Symbol
Min.
4.400
2.250
0.710
1.170
0.330
1.200
9.910
8.9500
12.650
Max.
4.600
2.550
0.910
1.370
0.650
1.400
10.250
9.750
12.950
A
A1
b
0.173
0.089
0.028
0.046
0.013
0.047
0.390
0.352
0.498
0.181
0.100
0.036
0.054
0.026
0.055
0.404
0.384
0.510
b1
c
c1
D
E
E1
e
2.540 TYP.
0.100 TYP.
e1
F
4.980
2.650
7.900
0.000
12.900
2.850
5.180
2.950
8.100
0.300
13.400
3.250
0.196
0.104
0.311
0.000
0.508
0.112
0.204
0.116
0.319
0.012
0.528
0.128
H
h
L
L1
V
7.500 REF.
0.295 REF.
Φ
3.400
3.800
0.134
0.150
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