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S30C60 [MOSPEC]

SCHOTTKY BARRIER RECTIFIERS(30A,30-60V); 肖特基二极管（ 30A ， 30-60V ）

S30C60


元器件型号：	S30C60
生产厂家：	MOSPEC SEMICONDUCTOR
描述和应用：	SCHOTTKY BARRIER RECTIFIERS(30A,30-60V) 肖特基二极管（ 30A ， 30-60V ）肖特基二极管
PDF文件：	总3页 (文件大小：259K)
下载文档：	下载PDF数据表文档文件
型号参数：S30C60参数

S30C60CPT

Rectifier Diode,

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0 CHENMKO

S30C60DPT

Rectifier Diode,

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0 CHENMKO

S30C60DPT

Rectifier Diode,

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0 CHENMKO

S30C60PT

SCHOTTKY BARRIER RECTIFIER

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12 CHENMKO

S30C90C

Schottky Barrier Rectifiers

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24 MOSPEC

S30D100

SCHOTTKY BARRIER RECTIFIERS(30A,70-100V)

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37 MOSPEC

S30D100A

30.0 Amperes Heat Sink Dual Common Anode Schottky Half Bridge Rectifiers

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0 THINKISEMI

S30D100PT

Schottky Barrier Rectifier

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2 CTC

S30D10A0

Silicon Controlled Rectifier, 550A I(T)RMS, 280000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209AE

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0 IRF

S30D10A0

Silicon Controlled Rectifier, 550A I(T)RMS, 280000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209AE

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0 IRF

S30D10A0PBF

Silicon Controlled Rectifier, 550A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209AE

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0 IRF

S30D10A0PBF

Silicon Controlled Rectifier, 550A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209AE

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0 IRF

S30D10B0

Silicon Controlled Rectifier, 550A I(T)RMS, 275000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209AE

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0 IRF

S30D10B0

Silicon Controlled Rectifier, 550A I(T)RMS, 275000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209AE

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0 IRF

S30D10B0F

Silicon Controlled Rectifier, 550A I(T)RMS, 275000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209AE, TO-118, 3 PIN

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0 IRF

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