BC550C [MOTOROLA]
Low Noise Transistors; 低噪声晶体管
| 型号： | BC550C |
| 厂家： | 
MOTOROLA |
| 描述： | Low Noise Transistors |
| 文件： | 总4页 (文件大小：113K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by BC549B/D
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
COLLECTOR
1
2
BASE
3
EMITTER
1
MAXIMUM RATINGS
2
3
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
BC549 BC550
Unit
Vdc
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
V
CEO
V
CBO
V
EBO
30
30
45
50
Vdc
5.0
Vdc
Collector Current — Continuous
I
C
100
mAdc
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
A
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
1.5
12
Watt
mW/°C
C
Operating and Storage Junction
Temperature Range
T , T
–55 to +150
°C
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
200
Unit
°C/W
°C/W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
R
JA
JC
83.3
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I = 10 mAdc, I = 0)
V
Vdc
Vdc
Vdc
(BR)CEO
BC549B,C
BC550B,C
30
45
—
—
—
—
C
B
Collector–Base Breakdown Voltage
(I = 10 µAdc, I = 0)
V
(BR)CBO
BC549B,C
BC550B,C
30
50
—
—
—
—
C
E
Emitter–Base Breakdown Voltage
(I = 10 Adc, I = 0)
V
5.0
—
—
(BR)EBO
E
C
Collector Cutoff Current
I
CBO
(V
CB
(V
CB
= 30 V, I = 0)
—
—
—
—
15
5.0
nAdc
µAdc
E
= 30 V, I = 0, T = +125°C)
E
A
Emitter Cutoff Current
(V = 4.0 Vdc, I = 0)
I
—
—
15
nAdc
EBO
EB
C
Motorola, Inc. 1996
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I = 10 µAdc, V
C CE
h
FE
—
= 5.0 Vdc)
= 5.0 Vdc)
BC549B/550B
BC549C/550C
BC549B/550B
BC549C/550C
100
100
200
420
150
270
290
500
—
—
450
800
(I = 2.0 mAdc, V
C CE
Collector–Emitter Saturation Voltage
(I = 10 mAdc, I = 0.5 mAdc)
V
V
Vdc
CE(sat)
—
—
—
0.075
0.3
0.25
0.25
0.6
0.6
C
B
(I = 10 mAdc, I = see note 1)
C
B
(I = 100 mAdc, I = 5.0 mAdc, see note 2)
C
B
Base–Emitter Saturation Voltage
(I = 100 mAdc, I = 5.0 mAdc)
—
1.1
—
Vdc
Vdc
BE(sat)
C
B
Base–Emitter On Voltage
(I = 10 µAdc, V = 5.0 Vdc)
V
BE(on)
—
—
0.55
0.52
0.55
0.62
—
—
0.7
C
C
CE
CE
CE
(I = 100 µAdc, V
= 5.0 Vdc)
= 5.0 Vdc)
(I = 2.0 mAdc, V
C
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
f
—
—
250
2.5
—
—
MHz
pF
T
(I = 10 mAdc, V
C CE
= 5.0 Vdc, f = 100 MHz)
Collector–Base Capacitance
(V = 10 Vdc, I = 0, f = 1.0 MHz)
C
cbo
CB
E
Small–Signal Current Gain
h
fe
—
(I = 2.0 mAdc, V
C
= 5.0 V, f = 1.0 kHz)
BC549B/BC550B
BC549C/BC550C
240
450
330
600
500
900
CE
Noise Figure
dB
(I = 200 µAdc, V
(I = 200 µAdc, V
C
= 5.0 Vdc, R = 2.0 kΩ, f = 1.0 kHz)
NF
NF
—
—
0.6
—
2.5
10
C
CE
CE
S
1
2
= 5.0 Vdc, R = 100 kΩ, f = 1.0 kHz)
S
NOTES:
1. I is value for which I = 11 mA at V
2. Pulse test = 300 µs – Duty cycle = 2%.
= 1.0 V.
B
C
CE
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2.0
1.5
1.0
0.9
T
= 25
°
C
V
= 10 V
A
CE
= 25°C
T
A
0.8
0.7
0.6
0.5
0.4
V
@ I /I = 10
C B
BE(sat)
1.0
0.8
V
@ V = 10 V
CE
BE(on)
0.6
0.4
0.3
0.3
0.2
0.1
0
V
@ I /I = 10
C B
CE(sat)
0.2
0.2
0.5
1.0
2.0
5.0
10
20
50
100 200
0.1
0.2
0.5
1.0 2.0
5.0
10
20
50
100
I
, COLLECTOR CURRENT (mAdc)
I , COLLECTOR CURRENT (mAdc)
C
C
Figure 2. Normalized DC Current Gain
Figure 3. “Saturation” and “On” Voltages
10
7.0
5.0
400
300
200
T
= 25°C
A
C
ib
100
80
60
V
T
= 10 V
CE
= 25
°C
3.0
2.0
A
C
ob
40
30
20
1.0
0.4 0.6
0.5 0.7 1.0
2.0
5.0 7.0 10
20
50
1.0
2.0
V , REVERSE VOLTAGE (VOLTS)
R
4.0
10
20
40
I
, COLLECTOR CURRENT (mAdc)
C
Figure 4. Current–Gain — Bandwidth Product
Figure 5. Capacitance
170
160
150
V
= 10 V
CE
f = 1.0 kHz
= 25
140
130
120
T
°C
A
0.1
0.2
0.5
1.0
2.0
5.0
10
I
, COLLECTOR CURRENT (mAdc)
C
Figure 6. Base Spreading Resistance
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
A
B
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
P
L
F
SEATING
PLANE
INCHES
MIN
MILLIMETERS
K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
MAX
0.205
0.210
0.165
0.022
0.019
0.055
0.105
0.020
–––
MIN
4.45
4.32
3.18
0.41
0.41
1.15
2.42
0.39
12.70
6.35
2.04
–––
MAX
5.20
5.33
4.19
0.55
0.48
1.39
2.66
0.50
–––
0.175
0.170
0.125
0.016
0.016
0.045
0.095
0.015
0.500
0.250
0.080
–––
D
J
X X
G
H
V
SECTION X–X
C
–––
–––
0.105
0.100
–––
2.66
2.54
–––
1
N
R
V
0.115
0.135
2.93
3.43
N
–––
–––
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
CASE 029–04
(TO–226AA)
ISSUE AD
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different
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BC549B/D
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