BC557AZL1 [MOTOROLA]

100mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226AA, TO-92, 3 PIN;
BC557AZL1
型号: BC557AZL1
厂家: MOTOROLA    MOTOROLA
描述:

100mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226AA, TO-92, 3 PIN

放大器 晶体管
文件: 总8页 (文件大小:178K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
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by BC556/D  
SEMICONDUCTOR TECHNICAL DATA  
PNP Silicon  
COLLECTOR  
1
2
BASE  
3
EMITTER  
MAXIMUM RATINGS  
1
2
BC  
BC  
557  
BC  
3
556  
–65  
–80  
558  
–30  
–30  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Unit  
Vdc  
CASE 29–04, STYLE 17  
TO–92 (TO–226AA)  
V
CEO  
V
CBO  
V
EBO  
–45  
–50  
Vdc  
–5.0  
–100  
Vdc  
Collector Current — Continuous  
I
C
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watt  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
83.3  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
CollectorEmitter Breakdown Voltage  
(I = –2.0 mAdc, I = 0)  
V
V
V
V
(BR)CEO  
BC556  
BC557  
BC558  
–65  
–45  
–30  
C
B
CollectorBase Breakdown Voltage  
(I = –100 µAdc)  
C
V
(BR)CBO  
BC556  
BC557  
BC558  
–80  
–50  
–30  
EmitterBase Breakdown Voltage  
V
(BR)EBO  
(I = –100 Adc, I = 0)  
BC556  
BC557  
BC558  
–5.0  
–5.0  
–5.0  
E
C
Collector–Emitter Leakage Current  
I
CES  
(V  
CES  
(V  
CES  
= –40 V)  
= –20 V)  
BC556  
BC557  
BC558  
BC556  
BC557  
BC558  
–2.0  
–2.0  
–2.0  
–100  
–100  
–100  
–4.0  
–4.0  
–4.0  
nA  
(V  
CES  
= –20 V, T = 125°C)  
µA  
A
Motorola, Inc. 1996  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
ON CHARACTERISTICS  
DC Current Gain  
(I = –10 µAdc, V  
C
h
FE  
= –5.0 V)  
CE  
BC557A  
BC556B/557B/558B  
BC557C  
BC556  
BC557  
BC558  
BC557A  
BC556B/557B/558B  
BC557C  
BC557A  
120  
120  
120  
120  
180  
420  
90  
150  
270  
170  
290  
500  
120  
180  
300  
500  
800  
800  
220  
460  
800  
(I = –2.0 mAdc, V  
C
= –5.0 V)  
= –5.0 V)  
CE  
(I = –100 mAdc, V  
C CE  
BC556B/557B/558B  
BC557C  
CollectorEmitter Saturation Voltage  
(I = –10 mAdc, I = –0.5 mAdc)  
V
V
V
CE(sat)  
–0.075  
–0.3  
–0.25  
–0.3  
–0.6  
–0.65  
C
B
(I = –10 mAdc, I = see Note 1)  
C
C
B
B
(I = –100 mAdc, I = –5.0 mAdc)  
BaseEmitter Saturation Voltage  
(I = –10 mAdc, I = –0.5 mAdc)  
V
V
BE(sat)  
–0.7  
–1.0  
C
C
B
B
(I = –100 mAdc, I = –5.0 mAdc)  
Base–Emitter On Voltage  
V
BE(on)  
(I = –2.0 mAdc, V  
(I = –10 mAdc, V  
C
= –5.0 Vdc)  
CE  
= –5.0 Vdc)  
CE  
–0.55  
–0.62  
–0.7  
–0.7  
–0.82  
C
SMALL–SIGNAL CHARACTERISTICS  
CurrentGain — Bandwidth Product  
f
T
MHz  
(I = –10 mA, V  
= –5.0 V, f = 100 MHz)  
CE  
BC556  
BC557  
BC558  
280  
320  
360  
C
Output Capacitance  
(V = –10 V, I = 0, f = 1.0 MHz)  
C
3.0  
6.0  
pF  
dB  
ob  
CB  
Noise Figure  
(I = –0.2 mAdc, V  
C
NF  
= –5.0 V,  
CE  
= 2.0 k , f = 1.0 kHz, f = 200 Hz)  
BC556  
BC557  
BC558  
2.0  
2.0  
2.0  
10  
10  
10  
C
R
S
Small–Signal Current Gain  
(I = –2.0 mAdc, V = –5.0 V, f = 1.0 kHz) BC556  
h
fe  
125  
125  
125  
240  
450  
220  
330  
600  
500  
900  
260  
500  
900  
C
CE  
BC557/558  
BC557A  
BC556B/557B/558B  
BC557C  
Note 1: I = –10 mAdc on the constant base current characteristics, which yields the point I = –11 mAdc, V = –1.0 V.  
CE  
C
C
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data  
BC557/BC558  
2.0  
1.5  
–1.0  
–0.9  
T
= 25°C  
A
V
T
= –10 V  
CE  
= 25  
V
@ I /I = 10  
C B  
BE(sat)  
°C  
–0.8  
–0.7  
–0.6  
–0.5  
–0.4  
–0.3  
–0.2  
–0.1  
0
A
1.0  
0.7  
0.5  
V
@ V  
= –10 V  
CE  
BE(on)  
0.3  
0.2  
V
@ I /I = 10  
C B  
CE(sat)  
–0.2  
–0.5 –1.0 –2.0  
–5.0 –10 –20  
–50 –100 –200  
–0.1  
–1.0  
I , COLLECTOR CURRENT (mAdc)  
C
–10  
–100  
–0.2  
–0.5  
–2.0  
–5.0  
–20  
–50  
I
, COLLECTOR CURRENT (mAdc)  
C
Figure 1. Normalized DC Current Gain  
Figure 2. “Saturation” and “On” Voltages  
1.0  
–2.0  
–1.6  
–1.2  
–0.8  
–0.4  
–55°C to +125°C  
T
= 25°C  
A
1.2  
1.6  
2.0  
2.4  
2.8  
I
=
I
= –50 mA  
I
C
= –200 mA  
= –100 mA  
C
C
–10 mA  
I
C
I
= –20 mA  
C
0
–0.02  
–0.1  
–1.0  
, BASE CURRENT (mA)  
–10 –20  
–0.2  
–1.0  
I , COLLECTOR CURRENT (mA)  
C
–10  
–100  
I
B
Figure 3. Collector Saturation Region  
Figure 4. Base–Emitter Temperature Coefficient  
10  
400  
300  
C
ib  
7.0  
T
= 25°C  
A
200  
150  
5.0  
V
= –10 V  
CE  
= 25°C  
T
A
100  
80  
C
ob  
3.0  
2.0  
60  
40  
30  
1.0  
20  
–0.6  
–1.0  
–2.0  
–4.0 –6.0  
–10  
–20 –30 –40  
–1.0  
–2.0 –3.0  
I , COLLECTOR CURRENT (mAdc)  
C
–5.0  
–10  
–20 –30  
–50  
–0.4  
–0.5  
V
, REVERSE VOLTAGE (VOLTS)  
R
Figure 5. Capacitances  
Figure 6. Current–Gain – Bandwidth Product  
Motorola Small–Signal Transistors, FETs and Diodes Device Data  
3
BC556  
–1.0  
–0.8  
–0.6  
T
= 25°C  
J
V
= –5.0 V  
CE  
= 25°C  
T
A
V
@ I /I = 10  
C B  
BE(sat)  
2.0  
1.0  
0.5  
V
@ V  
= –5.0 V  
CE  
BE  
–0.4  
–0.2  
0
0.2  
V
@ I /I = 10  
C B  
CE(sat)  
–0.1 –0.2  
–1.0 –2.0  
–10 –20  
–100 –200  
–50  
–0.2  
–0.5 –1.0 –2.0  
–5.0 –10 –20  
–50 –100 –200  
–5.0  
I
, COLLECTOR CURRENT (AMP)  
I , COLLECTOR CURRENT (mA)  
C
C
Figure 7. DC Current Gain  
Figure 8. “On” Voltage  
–2.0  
–1.6  
–1.2  
–0.8  
–0.4  
0
–1.0  
–1.4  
–1.8  
–2.2  
–2.6  
–3.0  
–100 mA –200 mA  
I
=
–20 mA  
–50 mA  
C
–10 mA  
θ
for V  
BE  
VB  
–55  
°
C to 125  
°
C
T
= 25°C  
J
–0.02 –0.05 –0.1 –0.2  
–0.5 –1.0 –2.0  
–5.0 –10 –20  
–0.2  
–0.5 –1.0 –2.0  
–5.0 –10 –20  
–50 –100 –200  
I
, BASE CURRENT (mA)  
I , COLLECTOR CURRENT (mA)  
C
B
Figure 9. Collector Saturation Region  
Figure 10. Base–Emitter Temperature Coefficient  
40  
20  
V
= –5.0 V  
CE  
500  
T
= 25°C  
J
C
ib  
200  
100  
50  
10  
8.0  
6.0  
4.0  
C
ob  
20  
2.0  
–0.1 –0.2  
–0.5 –1.0 –2.0  
–5.0  
–10 –20  
–50 –100  
–1.0  
–10  
I , COLLECTOR CURRENT (mA)  
C
–100  
V
, REVERSE VOLTAGE (VOLTS)  
R
Figure 11. Capacitance  
Figure 12. Current–Gain – Bandwidth Product  
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data  
1.0  
0.7  
0.5  
D = 0.5  
0.2  
0.3  
0.2  
SINGLE PULSE  
0.05  
Z
R
Z
(t) = (t) R  
JC  
0.1  
θ
θ
JC  
C/W MAX  
(t) = r(t) R  
0.1  
0.07  
0.05  
= 83.3°  
θ
JC  
P
(pk)  
SINGLE PULSE  
θ
JA  
θ
JA  
R
= 200°C/W MAX  
t
θ
JA  
1
D CURVES APPLY FOR POWER  
PULSE TRAIN SHOWN  
t
0.03  
0.02  
2
DUTY CYCLE, D = t /t  
1 2  
READ TIME AT t  
1
T
– T = P  
R (t)  
θJC  
J(pk)  
C
(pk)  
0.01  
0.1  
0.2  
0.5  
1.0  
2.0  
5.0  
10  
20  
50  
100  
200  
500  
1.0 k  
2.0 k  
5.0 k  
10 k  
t, TIME (ms)  
Figure 13. Thermal Response  
–200  
1 s  
3 ms  
–100  
–50  
The safe operating area curves indicate I –V  
limits of the  
CE  
C
transistor that must be observed for reliable operation. Collector load  
lines for specific circuits must fall below the limits indicated by the  
applicable curve.  
T
= 25°C  
T
= 25°C  
J
A
The data of Figure 14 is based upon T  
= 150°C; T or T is  
J(pk)  
C A  
BC558  
BC557  
BC556  
variable depending upon conditions. Pulse curves are valid for duty  
cyclesto10%providedT 150°C. T maybecalculatedfrom  
J(pk)  
J(pk)  
–10  
the data in Figure 13. At high case or ambient temperatures, thermal  
limitations will reduce the power than can be handled to values less  
than the limitations imposed by second breakdown.  
–5.0  
BONDING WIRE LIMIT  
THERMAL LIMIT  
SECOND BREAKDOWN LIMIT  
–2.0  
–1.0  
–5.0  
–10  
–30 –45 –65 –100  
V
, COLLECTOR–EMITTER VOLTAGE (V)  
CE  
Figure 14. Active Region — Safe Operating Area  
Motorola Small–Signal Transistors, FETs and Diodes Device Data  
5
PACKAGE DIMENSIONS  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
3. CONTOUR OF PACKAGE BEYOND DIMENSION R  
IS UNCONTROLLED.  
A
B
4. DIMENSION F APPLIES BETWEEN P AND L.  
DIMENSION D AND J APPLY BETWEEN L AND K  
MINIMUM. LEAD DIMENSION IS UNCONTROLLED  
IN P AND BEYOND DIMENSION K MINIMUM.  
R
P
L
F
SEATING  
PLANE  
INCHES  
MIN  
MILLIMETERS  
K
DIM  
A
B
C
D
F
G
H
J
K
L
N
P
MAX  
0.205  
0.210  
0.165  
0.022  
0.019  
0.055  
0.105  
0.020  
–––  
MIN  
4.45  
4.32  
3.18  
0.41  
0.41  
1.15  
2.42  
0.39  
12.70  
6.35  
2.04  
–––  
MAX  
5.20  
5.33  
4.19  
0.55  
0.48  
1.39  
2.66  
0.50  
–––  
0.175  
0.170  
0.125  
0.016  
0.016  
0.045  
0.095  
0.015  
0.500  
0.250  
0.080  
–––  
D
J
X X  
G
H
V
SECTION X–X  
C
–––  
–––  
0.105  
0.100  
–––  
2.66  
2.54  
–––  
1
N
R
V
0.115  
0.135  
2.93  
3.43  
N
–––  
–––  
STYLE 17:  
PIN 1. COLLECTOR  
2. BASE  
3. EMITTER  
CASE 029–04  
(TO–226AA)  
ISSUE AD  
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding  
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,  
andspecificallydisclaimsanyandallliability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different  
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does  
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in  
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of  
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such  
unintendedor unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless  
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.  
Motorola and  
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.  
How to reach us:  
USA/EUROPE: Motorola Literature Distribution;  
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,  
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447  
6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315  
MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609  
INTERNET: http://Design–NET.com  
HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,  
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298  
BC556/D  
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N/A BC558ZL1Tape and TO-92  
Ammunition(TO-226)  
Box  
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