BC557AZL1 [MOTOROLA]
100mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226AA, TO-92, 3 PIN;型号: | BC557AZL1 |
厂家: | MOTOROLA |
描述: | 100mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226AA, TO-92, 3 PIN 放大器 晶体管 |
文件: | 总8页 (文件大小:178K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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by BC556/D
SEMICONDUCTOR TECHNICAL DATA
PNP Silicon
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
1
2
BC
BC
557
BC
3
556
–65
–80
558
–30
–30
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
Unit
Vdc
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
V
CEO
V
CBO
V
EBO
–45
–50
Vdc
–5.0
–100
Vdc
Collector Current — Continuous
I
C
mAdc
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
A
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
1.5
12
Watt
mW/°C
C
Operating and Storage Junction
Temperature Range
T , T
–55 to +150
°C
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
200
Unit
°C/W
°C/W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
R
JA
JC
83.3
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I = –2.0 mAdc, I = 0)
V
V
V
V
(BR)CEO
BC556
BC557
BC558
–65
–45
–30
—
—
—
—
—
—
C
B
Collector–Base Breakdown Voltage
(I = –100 µAdc)
C
V
(BR)CBO
BC556
BC557
BC558
–80
–50
–30
—
—
—
—
—
—
Emitter–Base Breakdown Voltage
V
(BR)EBO
(I = –100 Adc, I = 0)
BC556
BC557
BC558
–5.0
–5.0
–5.0
—
—
—
—
—
—
E
C
Collector–Emitter Leakage Current
I
CES
(V
CES
(V
CES
= –40 V)
= –20 V)
BC556
BC557
BC558
BC556
BC557
BC558
—
—
—
—
—
—
–2.0
–2.0
–2.0
—
—
—
–100
–100
–100
–4.0
–4.0
–4.0
nA
(V
CES
= –20 V, T = 125°C)
µA
A
Motorola, Inc. 1996
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I = –10 µAdc, V
C
h
FE
—
= –5.0 V)
CE
BC557A
BC556B/557B/558B
BC557C
BC556
BC557
BC558
BC557A
BC556B/557B/558B
BC557C
BC557A
—
—
—
120
120
120
120
180
420
—
90
150
270
—
—
—
170
290
500
120
180
300
—
—
—
500
800
800
220
460
800
—
(I = –2.0 mAdc, V
C
= –5.0 V)
= –5.0 V)
CE
(I = –100 mAdc, V
C CE
BC556B/557B/558B
BC557C
—
—
—
—
Collector–Emitter Saturation Voltage
(I = –10 mAdc, I = –0.5 mAdc)
V
V
V
CE(sat)
—
—
—
–0.075
–0.3
–0.25
–0.3
–0.6
–0.65
C
B
(I = –10 mAdc, I = see Note 1)
C
C
B
B
(I = –100 mAdc, I = –5.0 mAdc)
Base–Emitter Saturation Voltage
(I = –10 mAdc, I = –0.5 mAdc)
V
V
BE(sat)
—
—
–0.7
–1.0
—
—
C
C
B
B
(I = –100 mAdc, I = –5.0 mAdc)
Base–Emitter On Voltage
V
BE(on)
(I = –2.0 mAdc, V
(I = –10 mAdc, V
C
= –5.0 Vdc)
CE
= –5.0 Vdc)
CE
–0.55
—
–0.62
–0.7
–0.7
–0.82
C
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
f
T
MHz
(I = –10 mA, V
= –5.0 V, f = 100 MHz)
CE
BC556
BC557
BC558
—
—
—
280
320
360
—
—
—
C
Output Capacitance
(V = –10 V, I = 0, f = 1.0 MHz)
C
—
3.0
6.0
pF
dB
ob
CB
Noise Figure
(I = –0.2 mAdc, V
C
NF
= –5.0 V,
CE
= 2.0 k , f = 1.0 kHz, ∆f = 200 Hz)
BC556
BC557
BC558
—
—
—
2.0
2.0
2.0
10
10
10
C
R
S
Small–Signal Current Gain
(I = –2.0 mAdc, V = –5.0 V, f = 1.0 kHz) BC556
h
fe
—
125
125
125
240
450
—
—
220
330
600
500
900
260
500
900
C
CE
BC557/558
BC557A
BC556B/557B/558B
BC557C
Note 1: I = –10 mAdc on the constant base current characteristics, which yields the point I = –11 mAdc, V = –1.0 V.
CE
C
C
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
BC557/BC558
2.0
1.5
–1.0
–0.9
T
= 25°C
A
V
T
= –10 V
CE
= 25
V
@ I /I = 10
C B
BE(sat)
°C
–0.8
–0.7
–0.6
–0.5
–0.4
–0.3
–0.2
–0.1
0
A
1.0
0.7
0.5
V
@ V
= –10 V
CE
BE(on)
0.3
0.2
V
@ I /I = 10
C B
CE(sat)
–0.2
–0.5 –1.0 –2.0
–5.0 –10 –20
–50 –100 –200
–0.1
–1.0
I , COLLECTOR CURRENT (mAdc)
C
–10
–100
–0.2
–0.5
–2.0
–5.0
–20
–50
I
, COLLECTOR CURRENT (mAdc)
C
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
1.0
–2.0
–1.6
–1.2
–0.8
–0.4
–55°C to +125°C
T
= 25°C
A
1.2
1.6
2.0
2.4
2.8
I
=
I
= –50 mA
I
C
= –200 mA
= –100 mA
C
C
–10 mA
I
C
I
= –20 mA
C
0
–0.02
–0.1
–1.0
, BASE CURRENT (mA)
–10 –20
–0.2
–1.0
I , COLLECTOR CURRENT (mA)
C
–10
–100
I
B
Figure 3. Collector Saturation Region
Figure 4. Base–Emitter Temperature Coefficient
10
400
300
C
ib
7.0
T
= 25°C
A
200
150
5.0
V
= –10 V
CE
= 25°C
T
A
100
80
C
ob
3.0
2.0
60
40
30
1.0
20
–0.6
–1.0
–2.0
–4.0 –6.0
–10
–20 –30 –40
–1.0
–2.0 –3.0
I , COLLECTOR CURRENT (mAdc)
C
–5.0
–10
–20 –30
–50
–0.4
–0.5
V
, REVERSE VOLTAGE (VOLTS)
R
Figure 5. Capacitances
Figure 6. Current–Gain – Bandwidth Product
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
BC556
–1.0
–0.8
–0.6
T
= 25°C
J
V
= –5.0 V
CE
= 25°C
T
A
V
@ I /I = 10
C B
BE(sat)
2.0
1.0
0.5
V
@ V
= –5.0 V
CE
BE
–0.4
–0.2
0
0.2
V
@ I /I = 10
C B
CE(sat)
–0.1 –0.2
–1.0 –2.0
–10 –20
–100 –200
–50
–0.2
–0.5 –1.0 –2.0
–5.0 –10 –20
–50 –100 –200
–5.0
I
, COLLECTOR CURRENT (AMP)
I , COLLECTOR CURRENT (mA)
C
C
Figure 7. DC Current Gain
Figure 8. “On” Voltage
–2.0
–1.6
–1.2
–0.8
–0.4
0
–1.0
–1.4
–1.8
–2.2
–2.6
–3.0
–100 mA –200 mA
I
=
–20 mA
–50 mA
C
–10 mA
θ
for V
BE
VB
–55
°
C to 125
°
C
T
= 25°C
J
–0.02 –0.05 –0.1 –0.2
–0.5 –1.0 –2.0
–5.0 –10 –20
–0.2
–0.5 –1.0 –2.0
–5.0 –10 –20
–50 –100 –200
I
, BASE CURRENT (mA)
I , COLLECTOR CURRENT (mA)
C
B
Figure 9. Collector Saturation Region
Figure 10. Base–Emitter Temperature Coefficient
40
20
V
= –5.0 V
CE
500
T
= 25°C
J
C
ib
200
100
50
10
8.0
6.0
4.0
C
ob
20
2.0
–0.1 –0.2
–0.5 –1.0 –2.0
–5.0
–10 –20
–50 –100
–1.0
–10
I , COLLECTOR CURRENT (mA)
C
–100
V
, REVERSE VOLTAGE (VOLTS)
R
Figure 11. Capacitance
Figure 12. Current–Gain – Bandwidth Product
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
SINGLE PULSE
0.05
Z
R
Z
(t) = (t) R
JC
0.1
θ
θ
JC
C/W MAX
(t) = r(t) R
0.1
0.07
0.05
= 83.3°
θ
JC
P
(pk)
SINGLE PULSE
θ
JA
θ
JA
R
= 200°C/W MAX
t
θ
JA
1
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t
0.03
0.02
2
DUTY CYCLE, D = t /t
1 2
READ TIME AT t
1
T
– T = P
R (t)
θJC
J(pk)
C
(pk)
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0 k
2.0 k
5.0 k
10 k
t, TIME (ms)
Figure 13. Thermal Response
–200
1 s
3 ms
–100
–50
The safe operating area curves indicate I –V
limits of the
CE
C
transistor that must be observed for reliable operation. Collector load
lines for specific circuits must fall below the limits indicated by the
applicable curve.
T
= 25°C
T
= 25°C
J
A
The data of Figure 14 is based upon T
= 150°C; T or T is
J(pk)
C A
BC558
BC557
BC556
variable depending upon conditions. Pulse curves are valid for duty
cyclesto10%providedT ≤ 150°C. T maybecalculatedfrom
J(pk)
J(pk)
–10
the data in Figure 13. At high case or ambient temperatures, thermal
limitations will reduce the power than can be handled to values less
than the limitations imposed by second breakdown.
–5.0
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
–2.0
–1.0
–5.0
–10
–30 –45 –65 –100
V
, COLLECTOR–EMITTER VOLTAGE (V)
CE
Figure 14. Active Region — Safe Operating Area
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
A
B
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
P
L
F
SEATING
PLANE
INCHES
MIN
MILLIMETERS
K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
MAX
0.205
0.210
0.165
0.022
0.019
0.055
0.105
0.020
–––
MIN
4.45
4.32
3.18
0.41
0.41
1.15
2.42
0.39
12.70
6.35
2.04
–––
MAX
5.20
5.33
4.19
0.55
0.48
1.39
2.66
0.50
–––
0.175
0.170
0.125
0.016
0.016
0.045
0.095
0.015
0.500
0.250
0.080
–––
D
J
X X
G
H
V
SECTION X–X
C
–––
–––
0.105
0.100
–––
2.66
2.54
–––
1
N
R
V
0.115
0.135
2.93
3.43
N
–––
–––
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
CASE 029–04
(TO–226AA)
ISSUE AD
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
andspecificallydisclaimsanyandallliability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintendedor unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us:
USA/EUROPE: Motorola Literature Distribution;
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447
6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315
MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609
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HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
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BC556/D
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Amplifier Transistors
158 kB P
Device BC558
Amplifier Transistors
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Package Pin Case
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Statu
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Desc.
CountOutline
N/A BC558ZL1Tape and TO-92
Ammunition(TO-226)
Box
3
29-11 Active
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