BUT34 [MOTOROLA]
50 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 850 VOLTS 250 WATTS; 50安培NPN硅功率达林顿晶体管850伏250瓦
| 型号： | BUT34 |
| 厂家： | 
MOTOROLA |
| 描述： | 50 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 850 VOLTS 250 WATTS |
| 文件： | 总8页 (文件大小：290K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Order this document
by BUT34/D
SEMICONDUCTOR TECHNICAL DATA
50 AMPERES
NPN SILICON
POWER DARLINGTON
TRANSISTOR
850 VOLTS
250 WATTS
The BUT34 Darlington transistor is designed for high–voltage, high–speed, power
switching in inductive circuits where fall time is critical. They are particularly suited for
line–operated SWITCHMODE applications such as:
•
•
•
•
•
AC and DC Motor Controls
Switching Regulators
Inverters
Solenoid and Relay Drivers
Fast Turn–Off Times
CASE 197A–05
TO–204AE
(TO–3)
0.7 µs Inductive Fall Time at 25 C (Typ)
1.8 µs Inductive Storage Time at 25 C (Typ)
Operating Temperature Range –65 to 200 C
•
≈
50
≈ 8
MAXIMUM RATINGS
Rating
Symbol
BUT34
Unit
Vdc
Vdc
Vdc
Adc
Collector–Emitter Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
V
500
850
10
CEO(sus)
V
CEV
V
EB
Collector Current — Continuous
Collector Current — Peak (1)
I
C
50
75
I
I
I
CM
Base Current — Continuous
Base Current — Peak (1)
I
B
10
15
Adc
Adc
BM
Free Wheel Diode Forward Current — Continuous
Free Wheel Diode Forward Current — Peak
I
F
50
75
FM
Total Power Dissipation @ T = 25 C
P
250
140
Watts
C
D
@ T = 100 C
C
Derate above 25 C
W/ C
C
Operating and Storage Junction Temperature Range
T , T
J
–65 to +200
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
0.7
Unit
C/W
C
Thermal Resistance, Junction to Case
R
θJC
Maximum Lead Temperature for Soldering Purpose:
1/8″ from Case for 5 Seconds
T
L
275
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
REV 7
Motorola, Inc. 1995
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (Table 1)
V
500
—
—
Vdc
CEO(sus)
(I = 100 mA, I = 0)
C
B
Collector Cutoff Current
I
mAdc
CEV
(V
CEV
(V
CEV
= Rated Value, V
= Rated Value, V
= 1.5 Vdc)
= 1.5 Vdc, T = 100 C)
—
—
—
—
0.2
4.0
BE(off)
BE(off)
C
Emitter Cutoff Current
(V = 2.0 V, I = 0)
I
—
—
350
mAdc
EBO
EB
C
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased
Clamped Inductive SOA with Base Reverse Biased
I
See Figure 16
See Figure 17
S/b
RBSOA
ON CHARACTERISTICS (1)
DC Current Gain
h
FE
(I = 16 A, V
= 5 V)
= 5 V)
30
15
—
—
—
—
C
CE
CE
(I = 32 A, V
C
Collector–Emitter Saturation Voltage
(I = 16 A, I = 0.8 A)
V
Vdc
CE(sat)
—
—
—
—
—
—
—
—
2.0
3.0
3.5
5.0
C
B
(I = 32 A, I = 3.2 A)
C
C
B
B
B
(I = 40 A, I = 4 A)
(I = 50 A, I = 10 A)
C
Base–Emitter Saturation Voltage
(I = 16 A, I = 0.8 A)
V
Vdc
Vdc
BE(sat)
—
—
—
—
—
—
2.5
2.9
3.3
C
B
(I = 32 A, I = 3.2 A)
C
C
B
B
(I = 40 A, I = 4 A)
Diode Forward Voltage
(I = 40 A)
F
V
f
—
—
4.0
SWITCHING CHARACTERISTICS
Inductive Load, Clamped (Table 1)
Storage Time
Fall Time
T
= 25 C
See Table 1
t
t
—
—
—
—
1.8
0.7
2.2
0.8
3.0
1.5
—
µs
µs
µs
µs
C
C
s
I
= 32 A
= 3.2 A
t
f
C
Storage Time
Fall Time
T
= 100 C
I
B1
s
V
= 5 V
t
—
BE(off)
f
(1) Pulse Test: PW = 300 µs, Duty Cycle
2%.
2
Motorola Bipolar Power Transistor Device Data
TYPICAL CHARACTERISTICS
400
200
100
50
4
3
2
30
20
I
= 40 A
C
10
I
= 20 A
C
5
1
0
T
= 25°C
3
2
C
T
V
= 25°C
C
= 5.0 V
CE
1
1
2
3
4
7
10
20
30 40
60
0.1
0.2 0.3
0.5
I , BASE CURRENT (AMPS)
B
1
2
3
5
7
10
I
, COLLECTOR CURRENT (AMPS)
C
Figure 1. DC Current Gain
Figure 2. Collector Saturation Region
T
I
= 25°C
T
= 25°C
/I = 10
C
C
2.5
2.2
1.9
1.6
1.3
1.0
0.7
0.4
3.2
2.8
2.5
2.2
1.9
1.6
1.3
1.0
/I = 10
I
C B
C B
40°C
25°C
25
°
C
100
°
C
100
°C
1
2
3
5
7
10
20
30
50
1
2
3
5
7
10
20
30
50
I
, COLLECTOR CURRENT (AMPS)
I
, COLLECTOR CURRENT (AMPS)
C
C
Figure 3. Collector–Emitter Saturation Voltage
Figure 4. Base–Emitter Voltage
1
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
P
(pk)
R
R
(t) = r(t) R
θ
θ
θ
JC
JC
JC
0.1
= 1.17
°
C/W MAX
0.05
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
0.07
0.05
0.02
t
1
READ TIME AT t
1
t
2
0.01
0.03
0.02
T
– T = P
R
(t)
J(pk)
C
(pk)
θ
JC
DUTY CYCLE, D = t /t
1 2
SINGLE PULSE
0.01
0.01
0.02 0.03 0.05
0.1
0.2
0.5
1
2
3
5
10
20
30
50
100
200 300
500
100
0.3
0
t, TIME (ms)
Figure 5. Thermal Response
3
Motorola Bipolar Power Transistor Device Data
Table 1. Test Conditions for Dynamic Performance
V
RBSOA AND INDUCTIVE SWITCHING
TEST CIRCUIT
for
CEO(sus)
FREE–WHEEL
DIODE
+10 V
20
Ω
22 µF
33
2 W
D1
1
2
2N6438
160
D3
5 V
MR854
+
220
100
100
0
MM3735
22
680 pF
I
ADJUST
b1
D1 D2 D3 D4 1N4934
680 pF
V
I
DRIVER
1
µ
F
I
ADJUST
dT ADJUST
D
b2
b
PULSES
= 3%
22
D4
PW Varied to Attain
= 100 mA
δ
2N3763
dT
I
C
680 pF
MR854
D
160
33
2N6339
D3
–
2 W
22 µF
L
R
V
= 10 mH, V
= 0.7 Ω
= V
= 10 V
L
R
V
= 180 µH
= 0.05 Ω
= 10 V
coil
coil
clamp
CC
coil
coil
CC
V
CC
CEO(sus)
AV
up to
50 V
INDUCTIVE TEST CIRCUIT
OUTPUT WAVEFORMS
t
Adjusted to
1
Obtain I
I
C
C
TUT
I
t
Clamped
t
CM
f
R
L
(I
)
)
coil
coil CM
1
CRONETICS
PG130
up to
t
1
V
I
1N4937
V
CC
D
510
t
t
f
1
L
OR
INPUT
coil
EQUIVALENT
L
(I
coil CM
SEE ABOVE FOR
50 V
5
µs
1%
t
2
V
V
CE
V
DETAILED CONDITIONS
V
V
clamp
clamp
V
D
CC
CEM
TIME
clamp
Test Equipment
Scope — Tektronix
475 or Equivalent
t
RS =
2
t
2
0.1
Ω
15
10
5
4
3
σ
σ
t
t
= 200 ns
= 400 ns
F
S
T
= 25°C
/I = 5
C
I
= 16 A
C
t
S
I
C B
V
= 5 V
BE(off)
5
2
3
2
10 V
1
1
0.5
V
= 5 V
10 V
BE(off)
0.5
0.3
0.2
I
= 50 A
I
= 25 A
C
C
0.3
0.2
I
/I = 10
C B
T
= 25°C
/I = 20
C
t
F
I
C B
0.1
0.1
1
2
3
4
5
Ib2/Ib1
6
7
8
9
10
1
2
3
5
7
10
20
30
50
I
, COLLECTOR CURRENT (AMPS)
C
Figure 6. Fall Time versus IB2/IB1
Figure 7. Turn–Off Time versus I
C
10
8
10
8
6
5
4
6
5
4
I
= 25 A
C
I
= 25 A
C
3
2
3
2
I
= 50 A
C
I
= 50 A
C
T
I
= 25°C
T
V
= 25°C
C
C
/I = 5
= 5 V
C B
BE(off)
1
1
1
2
3
4
5
6
7
8
9
10
1
2
3
4
5
6
7
8
9
10
β
, FORCED GAIN
Ib2/Ib1
f
Figure 8. Storage Time versus Forced Gain
Figure 9. Storage Time versus Ib2/Ib1
4
Motorola Bipolar Power Transistor Device Data
FREE–WHEEL DIODE CHARACTERISTICS
50
–
σ
+
σ
I
di/dt = 25 A/
µs
IFM
IRM
40
30
20
10
0
25 IRM
I
t
d
t
rr
1
0
V
DYN
D
10 (VDYN VFM)
VFM
T
= 25°C
C
TFR
0
1
2
3
4
5
V
, EMITTER COLLECTOR VOLTAGE (VOLTS)
EC
Figure 10. Free Wheel Diode Measurements
Figure 11. Forward Voltage
50
40
30
20
10
0
30
25
20
15
10
5
T
= 25°C
C
40
°
C
T = 25°C
C
0
0
10
20
30
40
50
0
10
20
I , EMITTER CURREMT (AMPS)
E
30
40
50
I
, EMITTER CURRENT (AMPS)
E
Figure 12. Forward Modulation Voltage
Figure 13. Peak Reverse Recovery Current
15
10
7
T
= 25°C
C
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
T = 25°C
C
5
3
2
0.1
0.7
0.5
0.3
0
10
20
30
40
50
0
10
20
I , EMITTER CURRENT (AMPS)
E
30
40
50
I
, EMITTER CURRENT (AMPS)
E
Figure 14. Forward Recovery Time
Figure 15. Reverse Recovery Time
5
Motorola Bipolar Power Transistor Device Data
The Safe Operating Area figures shown in Figures 16 and 17 are
specifed for these devices under the test conditions shown.
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
60
10 µs
DC
30
100 µs
down. Safe operating area curves indicate I – V
limits of
1 ms
C
CE
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subject to greater dissipation
than the curves indicate.
10
The data of Figure 16 is based on T = 25 C; T
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
is
J(pk)
3.0
1.0
C
when T
25 C. Second breakdown limitations do not der-
C
0.5
0.3
ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 16 may be found at any case tem-
perature by using the appropriate curve on Figure 18.
T
= 25°C
C
T
may be calculated from the data in Figure 5. At high
0.1
J(pk)
1
5
10
30
100
300
1000
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations im-
posed by second breakdown.
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
Figure 16. Safe Operating Area
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage–current condition allowable dur-
ing reverse biased turnoff. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 17 gives the RBSOA character-
istics.
60
40
20
0
T
= 25°C
/I = 10
C
I
C B
V
= 5 V
BE(off)
0
200
400
600
850
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
Figure 17. Reverse Bias Safe Operating Area
100
80
SECOND BREAKDOWN
DERATING
60
THERMAL
DERATING
40
20
0
0
40
80
120
160
200
I
, CASE TEMPERATURE (°C)
C
Figure 18. Power Derating
6
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
A
N
C
NOTES:
SEATING
PLANE
–T–
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
E
2. CONTROLLING DIMENSION: INCH.
K
D 2 PL
0.30 (0.012)
INCHES
MIN MAX
1.530 REF
MILLIMETERS
MIN
38.86 REF
25.15
6.35
1.45
1.53
M
M
M
T
Q
Y
DIM
A
B
C
D
E
MAX
U
0.990
1.050
0.335
0.063
0.070
26.67
8.51
1.60
1.77
–Y–
L
V
H
0.250
0.057
0.060
2
1
G
H
K
L
0.430 BSC
0.215 BSC
0.440 0.480
0.665 BSC
10.92 BSC
5.46 BSC
11.18 12.19
16.89 BSC
B
G
N
Q
U
V
0.760
0.830
0.165
19.31
21.08
4.19
–Q–
0.151
0.131
3.84
3.33
M
M
0.25 (0.010)
T Y
1.187 BSC
30.15 BSC
0.188
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
CASE 197A–05
TO–204AE (TO–3)
ISSUE J
7
Motorola Bipolar Power Transistor Device Data
Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintendedor unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us:
USA / EUROPE: Motorola Literature Distribution;
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447
6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315
MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609
INTERNET: http://Design–NET.com
HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
BUT34/D
◊
相关型号：
BUT47C16
Power Bipolar Transistor, 8A I(C), 550V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
MOTOROLA
BUT47C16A
Power Bipolar Transistor, 8A I(C), 550V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
MOTOROLA
BUT47CA
Power Bipolar Transistor, 8A I(C), 550V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
MOTOROLA
BUT47CC
Power Bipolar Transistor, 8A I(C), 550V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
MOTOROLA
©2020 ICPDF网 联系我们和版权申明