IRF641 [MOTOROLA]

18A, 150V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB;
IRF641
型号: IRF641
厂家: MOTOROLA, INC    MOTOROLA, INC
描述:

18A, 150V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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文件: 总2页 (文件大小:71K)
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IRF641-001PBF

Power Field-Effect Transistor, 18A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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1 IRF

IRF641-003PBF

Power Field-Effect Transistor, 18A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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1 IRF

IRF641-004PBF

Power Field-Effect Transistor, 18A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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2 IRF

IRF641R

TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 18A I(D) | TO-220AB

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31 ETC

IRF642

N-Channel Power MOSFETs, 18A, 150-200V

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87 FAIRCHILD

IRF642

Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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0 IRF

IRF642

16A, 200V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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0 MOTOROLA

IRF642

16A, 200V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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0 ROCHESTER

IRF642-004PBF

Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRF642-005PBF

Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRF642-012

Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 IRF

IRF642PBF

Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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0 IRF

IRF642R

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 16A I(D) | TO-220AB

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24 ETC

IRF643

N-Channel Power MOSFETs, 18A, 150-200V

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159 FAIRCHILD

IRF643-001

Power Field-Effect Transistor, 16A I(D), 150V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF